JP6088431B2 - 化合物半導体ウエハーのクリーニング方法 - Google Patents

化合物半導体ウエハーのクリーニング方法 Download PDF

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JP6088431B2
JP6088431B2 JP2013533070A JP2013533070A JP6088431B2 JP 6088431 B2 JP6088431 B2 JP 6088431B2 JP 2013533070 A JP2013533070 A JP 2013533070A JP 2013533070 A JP2013533070 A JP 2013533070A JP 6088431 B2 JP6088431 B2 JP 6088431B2
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wafer
cleaning method
minutes
cleaning
hydrogen peroxide
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JP2013541212A (ja
JP2013541212A5 (enExample
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任殿▲勝▼
▲劉▼▲慶▼▲輝▼
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北京通美晶体技▲術▼有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2013533070A 2010-10-15 2011-10-14 化合物半導体ウエハーのクリーニング方法 Active JP6088431B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201010513860.7 2010-10-15
CN2010105138607A CN102064090B (zh) 2010-10-15 2010-10-15 化合物半导体晶片清洗方法
PCT/CN2011/001721 WO2012048534A1 (zh) 2010-10-15 2011-10-14 化合物半导体晶片清洗方法

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JP2013541212A JP2013541212A (ja) 2013-11-07
JP2013541212A5 JP2013541212A5 (enExample) 2014-12-04
JP6088431B2 true JP6088431B2 (ja) 2017-03-01

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US (1) US8691019B2 (enExample)
EP (1) EP2629319B1 (enExample)
JP (1) JP6088431B2 (enExample)
CN (1) CN102064090B (enExample)
WO (1) WO2012048534A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064090B (zh) * 2010-10-15 2013-01-09 北京通美晶体技术有限公司 化合物半导体晶片清洗方法
CN102251242A (zh) * 2011-07-05 2011-11-23 国电宁夏太阳能有限公司 多晶硅清洗方法
CN102618936B (zh) * 2012-03-21 2015-01-14 北京通美晶体技术有限公司 砷化镓表面化学腐蚀方法和化学腐蚀液
CN102623308A (zh) * 2012-03-31 2012-08-01 上海宏力半导体制造有限公司 化学机械研磨后清洗方法以及化学机械研磨方法
CN103021833A (zh) * 2012-12-21 2013-04-03 中国科学院半导体研究所 降低衬底表面残留杂质浓度的方法
CN104465314A (zh) * 2013-09-23 2015-03-25 弘塑科技股份有限公司 芯片堆叠结构的干燥方法及其系统
CN104931568A (zh) * 2015-06-29 2015-09-23 彭梓 氧化铟锡电化学发光反应电极的再生清洗方法
CN105225988A (zh) * 2015-09-25 2016-01-06 江苏中科晶元信息材料有限公司 晶片清洗检查一体机
CN105483833A (zh) * 2015-11-24 2016-04-13 北京华进创威电子有限公司 一种氮化铝单晶的位错腐蚀方法
CN108655101A (zh) * 2017-03-29 2018-10-16 山东浪潮华光光电子股份有限公司 一种红光GaAs晶片的清洗方法
CN107039244B (zh) * 2017-04-14 2020-02-21 广东先导先进材料股份有限公司 半导体晶片的处理工艺
WO2018216203A1 (ja) * 2017-05-26 2018-11-29 住友電気工業株式会社 ＧａＡｓ基板およびその製造方法
CN108269733A (zh) * 2017-12-19 2018-07-10 君泰创新（北京）科技有限公司 一种硅片清洗方法
CN108266972A (zh) * 2017-12-26 2018-07-10 德淮半导体有限公司 晶圆干燥方法
CN110453288A (zh) * 2018-05-08 2019-11-15 安徽科瑞思创晶体材料有限责任公司 一种消除晶体切割应力的化学腐蚀工艺
CN111379027B (zh) * 2018-12-28 2021-03-16 北京通美晶体技术有限公司 一种砷化镓晶片及其制备方法
CN110335807B (zh) * 2019-06-24 2021-08-06 上海中欣晶圆半导体科技有限公司 一种硅片清洗方法
CN110373720A (zh) * 2019-09-03 2019-10-25 广东先导先进材料股份有限公司 一种砷化镓背侵的去除方法
WO2021176750A1 (ja) * 2020-03-02 2021-09-10 住友電気工業株式会社 ヒ化ガリウム単結晶基板およびヒ化ガリウム単結晶基板の製造方法
CN112259450A (zh) * 2020-09-18 2021-01-22 厦门市三安集成电路有限公司 一种分段式蚀刻方法
CN112837995A (zh) * 2020-12-28 2021-05-25 苏州恩腾半导体科技有限公司 一种晶片表面污染清洗方法
CN113000476B (zh) * 2021-01-26 2023-03-24 威科赛乐微电子股份有限公司 一种砷化镓物料的清洗工艺
CN113894097B (zh) * 2021-09-29 2022-08-16 广东先导微电子科技有限公司 化学机械抛光后的碲锌镉单晶晶片的清洗工艺
CN114334606B (zh) * 2021-11-15 2025-04-25 成都中浦石墨烯应用技术有限公司 碳化硅衬底晶片的清洗方法
CN114082740B (zh) * 2022-01-19 2022-04-08 北京通美晶体技术股份有限公司 一种清洗锗晶片的方法及其应用
CN115608694A (zh) * 2022-10-25 2023-01-17 云南鑫耀半导体材料有限公司 激光器用砷化镓偏角度为15°晶片的清洗方法
DE102023210126A1 (de) 2023-10-16 2025-04-17 Freiberger Compound Materials Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines III-V-Substrats, insbesondere GaAs und InP
CN117253778A (zh) * 2023-10-30 2023-12-19 中环领先半导体材料有限公司 一种晶圆的清洗方法
CN117380617A (zh) * 2023-10-30 2024-01-12 广东先导微电子科技有限公司 磷化铟晶片清洗方法及半导体晶片清洗装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4207976B2 (ja) * 2006-05-17 2009-01-14 住友電気工業株式会社 化合物半導体基板の表面処理方法、および化合物半導体結晶の製造方法
US4736760A (en) * 1986-02-21 1988-04-12 Robert A. Coberly Apparatus for cleaning, rinsing and drying substrates
JP2000290693A (ja) * 1999-04-12 2000-10-17 Japan Organo Co Ltd 電子部品部材類の洗浄方法
JP3624809B2 (ja) * 2000-02-29 2005-03-02 昭和電工株式会社 洗浄剤組成物、洗浄方法及びその用途
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US20020105057A1 (en) * 2001-02-02 2002-08-08 Vyvoda Michael A. Wafer surface that facilitates particle removal
WO2005001016A1 (en) * 2003-06-27 2005-01-06 Interuniversitair Microelektronica Centrum (Imec) Semiconductor cleaning solution
EP1602830A1 (en) * 2004-06-02 2005-12-07 Ailand Corporation S.A. Hydraulically driven multicylinder pumping machine
CN100428419C (zh) * 2004-12-08 2008-10-22 中国电子科技集团公司第四十六研究所 一种砷化镓晶片清洗方法
FR2912839B1 (fr) * 2007-02-16 2009-05-15 Soitec Silicon On Insulator Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud
JP5233277B2 (ja) * 2007-12-25 2013-07-10 富士通セミコンダクター株式会社 半導体基板の処理方法及び半導体装置の製造方法
CN101661869B (zh) * 2008-08-25 2012-06-13 北京有色金属研究总院 一种砷化镓晶片抛光后的清洗方法
CN102064090B (zh) * 2010-10-15 2013-01-09 北京通美晶体技术有限公司 化合物半导体晶片清洗方法
CN102110594B (zh) * 2010-12-20 2012-07-25 中国科学院半导体研究所 一种对GaAs与Si进行低温金属键合的方法

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EP2629319A4 (en) 2015-01-14
EP2629319A1 (en) 2013-08-21
EP2629319B1 (en) 2017-08-16
JP2013541212A (ja) 2013-11-07
WO2012048534A1 (zh) 2012-04-19
CN102064090A (zh) 2011-05-18
US8691019B2 (en) 2014-04-08
CN102064090B (zh) 2013-01-09
US20130276824A1 (en) 2013-10-24

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