JP6087506B2 - 描画方法及び物品の製造方法 - Google Patents

描画方法及び物品の製造方法 Download PDF

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Publication number
JP6087506B2
JP6087506B2 JP2012018634A JP2012018634A JP6087506B2 JP 6087506 B2 JP6087506 B2 JP 6087506B2 JP 2012018634 A JP2012018634 A JP 2012018634A JP 2012018634 A JP2012018634 A JP 2012018634A JP 6087506 B2 JP6087506 B2 JP 6087506B2
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JP
Japan
Prior art keywords
patterns
pattern
cut
cut patterns
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012018634A
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English (en)
Japanese (ja)
Other versions
JP2013157547A (ja
JP2013157547A5 (enExample
Inventor
辻田　好一郎
好一郎 辻田
村木　真人
真人 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012018634A priority Critical patent/JP6087506B2/ja
Priority to TW101150553A priority patent/TWI483290B/zh
Priority to KR1020130007497A priority patent/KR101597869B1/ko
Priority to US13/749,853 priority patent/US9690201B2/en
Priority to CN201310031183.9A priority patent/CN103226292B/zh
Publication of JP2013157547A publication Critical patent/JP2013157547A/ja
Publication of JP2013157547A5 publication Critical patent/JP2013157547A5/ja
Application granted granted Critical
Publication of JP6087506B2 publication Critical patent/JP6087506B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2012018634A 2012-01-31 2012-01-31 描画方法及び物品の製造方法 Expired - Fee Related JP6087506B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012018634A JP6087506B2 (ja) 2012-01-31 2012-01-31 描画方法及び物品の製造方法
TW101150553A TWI483290B (zh) 2012-01-31 2012-12-27 描畫方法和製造物品的方法
KR1020130007497A KR101597869B1 (ko) 2012-01-31 2013-01-23 묘화 방법 및 물품의 제조 방법
US13/749,853 US9690201B2 (en) 2012-01-31 2013-01-25 Drawing method and method of manufacturing article
CN201310031183.9A CN103226292B (zh) 2012-01-31 2013-01-28 描画方法和制造物品的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012018634A JP6087506B2 (ja) 2012-01-31 2012-01-31 描画方法及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2013157547A JP2013157547A (ja) 2013-08-15
JP2013157547A5 JP2013157547A5 (enExample) 2015-03-12
JP6087506B2 true JP6087506B2 (ja) 2017-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012018634A Expired - Fee Related JP6087506B2 (ja) 2012-01-31 2012-01-31 描画方法及び物品の製造方法

Country Status (5)

Country Link
US (1) US9690201B2 (enExample)
JP (1) JP6087506B2 (enExample)
KR (1) KR101597869B1 (enExample)
CN (1) CN103226292B (enExample)
TW (1) TWI483290B (enExample)

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US9501601B2 (en) * 2013-03-14 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Layout optimization of a main pattern and a cut pattern
JP6215061B2 (ja) * 2014-01-14 2017-10-18 株式会社アドバンテスト 電子ビーム露光装置
JP6211435B2 (ja) * 2014-02-26 2017-10-11 株式会社アドバンテスト 半導体装置の製造方法
US9318564B2 (en) 2014-05-19 2016-04-19 Qualcomm Incorporated High density static random access memory array having advanced metal patterning
EP3155645A4 (en) * 2014-06-13 2018-02-14 Intel Corporation Ebeam three beam aperture array
KR102377771B1 (ko) * 2014-06-13 2022-03-23 인텔 코포레이션 Ｅ 빔 스태거형 빔 애퍼처 어레이
WO2015191107A1 (en) 2014-06-13 2015-12-17 Intel Corporation Ebeam universal cutter
CN106463354B (zh) * 2014-06-25 2019-12-20 英特尔公司 用于形成功能单元的紧凑阵列的技术
US10191376B2 (en) 2014-08-19 2019-01-29 Intel Corporation Cross scan proximity correction with ebeam universal cutter
JP2016122676A (ja) 2014-12-24 2016-07-07 株式会社アドバンテスト 露光装置および露光方法
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
JP2016207926A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 露光装置および露光方法
JP2017063101A (ja) 2015-09-24 2017-03-30 株式会社アドバンテスト 露光装置および露光方法
US9818623B2 (en) 2016-03-22 2017-11-14 Globalfoundries Inc. Method of forming a pattern for interconnection lines and associated continuity blocks in an integrated circuit
JP2018041790A (ja) 2016-09-06 2018-03-15 株式会社アドバンテスト 露光装置および露光データ構造
US9818641B1 (en) 2016-09-21 2017-11-14 Globalfoundries Inc. Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines
US9818640B1 (en) 2016-09-21 2017-11-14 Globalfoundries Inc. Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines
US9786545B1 (en) 2016-09-21 2017-10-10 Globalfoundries Inc. Method of forming ANA regions in an integrated circuit
US9852986B1 (en) 2016-11-28 2017-12-26 Globalfoundries Inc. Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit
US10002786B1 (en) 2016-12-15 2018-06-19 Globalfoundries Inc. Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts
US10043703B2 (en) 2016-12-15 2018-08-07 Globalfoundries Inc. Apparatus and method for forming interconnection lines having variable pitch and variable widths
US9812351B1 (en) 2016-12-15 2017-11-07 Globalfoundries Inc. Interconnection cells having variable width metal lines and fully-self aligned continuity cuts
US9887127B1 (en) * 2016-12-15 2018-02-06 Globalfoundries Inc. Interconnection lines having variable widths and partially self-aligned continuity cuts
JP7474151B2 (ja) * 2020-08-21 2024-04-24 株式会社ニューフレアテクノロジー マルチ電子ビーム描画装置及びマルチ電子ビーム描画方法
JP7455720B2 (ja) * 2020-09-29 2024-03-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム照射装置およびマルチ荷電粒子ビーム照射方法
JP7492929B2 (ja) * 2021-02-19 2024-05-30 株式会社東芝 半導体装置、荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム照射装置

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JP6215061B2 (ja) * 2014-01-14 2017-10-18 株式会社アドバンテスト 電子ビーム露光装置
JP6211435B2 (ja) * 2014-02-26 2017-10-11 株式会社アドバンテスト 半導体装置の製造方法

Also Published As

Publication number Publication date
CN103226292B (zh) 2015-04-22
US9690201B2 (en) 2017-06-27
US20130196517A1 (en) 2013-08-01
KR20130088772A (ko) 2013-08-08
CN103226292A (zh) 2013-07-31
TWI483290B (zh) 2015-05-01
KR101597869B1 (ko) 2016-02-25
TW201331986A (zh) 2013-08-01
JP2013157547A (ja) 2013-08-15

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