JP6085956B2 - 面発光レーザアレイ素子、光走査装置及び画像形成装置 - Google Patents

面発光レーザアレイ素子、光走査装置及び画像形成装置 Download PDF

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Publication number
JP6085956B2
JP6085956B2 JP2012260156A JP2012260156A JP6085956B2 JP 6085956 B2 JP6085956 B2 JP 6085956B2 JP 2012260156 A JP2012260156 A JP 2012260156A JP 2012260156 A JP2012260156 A JP 2012260156A JP 6085956 B2 JP6085956 B2 JP 6085956B2
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emitting laser
mesa
wiring
surface emitting
layer
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JP2012260156A
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Japanese (ja)
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JP2013214706A5 (enExample
JP2013214706A (ja
Inventor
花岡　克成
克成 花岡
雅之 沼田
雅之 沼田
庄子　浩義
浩義 庄子
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP2012260156A priority Critical patent/JP6085956B2/ja
Priority to US13/781,975 priority patent/US8879600B2/en
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Publication of JP2013214706A5 publication Critical patent/JP2013214706A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/47—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light
    • B41J2/471—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror
    • B41J2/473—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror using multiple light beams, wavelengths or colours
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/106—Scanning systems having diffraction gratings as scanning elements, e.g. holographic scanners
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/12—Scanning systems using multifaceted mirrors
    • G02B26/123—Multibeam scanners, e.g. using multiple light sources or beam splitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2012260156A 2012-03-09 2012-11-28 面発光レーザアレイ素子、光走査装置及び画像形成装置 Expired - Fee Related JP6085956B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012260156A JP6085956B2 (ja) 2012-03-09 2012-11-28 面発光レーザアレイ素子、光走査装置及び画像形成装置
US13/781,975 US8879600B2 (en) 2012-03-09 2013-03-01 Surface emitting laser array element, optical scanning device, and image forming apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012052689 2012-03-09
JP2012052689 2012-03-09
JP2012260156A JP6085956B2 (ja) 2012-03-09 2012-11-28 面発光レーザアレイ素子、光走査装置及び画像形成装置

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JP2013214706A JP2013214706A (ja) 2013-10-17
JP2013214706A5 JP2013214706A5 (enExample) 2016-01-07
JP6085956B2 true JP6085956B2 (ja) 2017-03-01

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Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
JP2016174136A (ja) 2015-03-16 2016-09-29 株式会社リコー 面発光レーザアレイ、レーザ装置、点火装置、及び内燃機関
JP2017103448A (ja) 2015-11-24 2017-06-08 株式会社リコー レーザー光発生装置、レーザー加工機、被加工物の生産方法
JP2018181912A (ja) * 2017-04-04 2018-11-15 住友電気工業株式会社 面発光レーザを作製する方法
JP7400282B2 (ja) 2019-09-18 2023-12-19 株式会社リコー 面発光レーザ、面発光レーザ装置、光源装置及び検出装置
JP7367484B2 (ja) 2019-11-22 2023-10-24 株式会社リコー 面発光レーザ素子、面発光レーザ、面発光レーザ装置、光源装置及び検出装置
JP7704142B2 (ja) * 2020-06-25 2025-07-08 ソニーグループ株式会社 発光装置
WO2023233850A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 面発光素子
TWI867838B (zh) * 2023-11-10 2024-12-21 特崴光波導股份有限公司 半導體發光元件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
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JP3965801B2 (ja) 1998-10-05 2007-08-29 富士ゼロックス株式会社 面発光レーザアレイ装置
JP2005191343A (ja) 2003-12-26 2005-07-14 Ricoh Co Ltd 面発光レーザの製造方法および面発光レーザおよび光伝送システム
JP4752201B2 (ja) 2004-06-29 2011-08-17 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
JP4969066B2 (ja) * 2005-07-15 2012-07-04 株式会社リコー 面発光型半導体レーザアレイ
JP4641251B2 (ja) 2005-11-30 2011-03-02 シャープ株式会社 半導体装置の製造方法、半導体レーザ装置、光伝送モジュールおよび光ディスク装置
EP2013952B1 (en) 2006-04-28 2021-02-24 Ricoh Company, Ltd. Surface-emission laser array, optical scanning apparatus and image forming apparatus
JP5087874B2 (ja) 2006-07-28 2012-12-05 富士ゼロックス株式会社 面発光型半導体レーザおよびその製造方法
CN102136677B (zh) 2006-08-23 2015-06-17 株式会社理光 表面发射激光器阵列、光学扫描装置及图像形成装置
US7924487B2 (en) * 2007-02-09 2011-04-12 Ricoh Company, Ltd. Optical scanning device and image forming apparatus
JP5748949B2 (ja) 2008-11-20 2015-07-15 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5504784B2 (ja) 2009-03-18 2014-05-28 株式会社リコー 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置
JP5515767B2 (ja) 2009-05-28 2014-06-11 株式会社リコー 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5532239B2 (ja) 2009-11-26 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP2011148957A (ja) 2010-01-25 2011-08-04 Kyocera Chemical Corp 水溶性樹脂組成物、及びそれを用いた水性塗料
JP2011222721A (ja) * 2010-04-08 2011-11-04 Sony Corp 半導体レーザ
JP5585940B2 (ja) 2010-04-22 2014-09-10 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
US8416821B2 (en) * 2010-06-11 2013-04-09 Ricoh Company, Ltd. Surface emitting laser element, surface emitting laser array, optical scanning unit, image forming apparatus and method of manufacturing surface emitting laser element
JP5721055B2 (ja) 2010-06-11 2015-05-20 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法

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