JP6073988B2 - 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 - Google Patents
光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 Download PDFInfo
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- JP6073988B2 JP6073988B2 JP2015139276A JP2015139276A JP6073988B2 JP 6073988 B2 JP6073988 B2 JP 6073988B2 JP 2015139276 A JP2015139276 A JP 2015139276A JP 2015139276 A JP2015139276 A JP 2015139276A JP 6073988 B2 JP6073988 B2 JP 6073988B2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title description 21
- 229910052733 gallium Inorganic materials 0.000 title description 21
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title description 19
- 230000003287 optical effect Effects 0.000 title description 13
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000605 extraction Methods 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 34
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本出願は、米国仮出願No.61/356,473号(出願日:2010年6月18日)に対する優先権を主張する。本明細書中、同出願を参考のため及び全ての目的のために援用する。
Claims (13)
- 発光素子であって、当該発光素子は、
III族窒化物含有基板と、ここで、当該基板はウルツ鉱型結晶構造を有し、当該結晶構造は、少なくとも第1のa面、第2のa面、および第3のa面を規定する、
前記基板上に形成された発光エピタキシャル構造と、
を有し、
前記素子は、前記第1のa面、第2のa面、および第3のa面に沿った第1の面、第2の面、および第3の面を有し、当該第1の面、第2の面、および第3の面は三角形を形成し、
前記素子は、第4の面および第5の面を有し、これら第4の面および第5の面は、三角形をなしている、
発光素子。 - 前記基板はバルクGaNを含む、請求項1に記載の発光素子。
- 前記第1の面、第2の面、および第3の面は、それぞれ、前記第1のa面、第2のa面、および第3のa面に沿って切断することによって定義される、請求項1に記載の発光素子。
- 前記第4の面および第5の面は互いに平行であり、前記第1の面、第2の面、および第3の面は、前記第4の面および第5の面に対して直角をなしている、請求項1に記載の発光素子。
- 前記第4の面および第5の面は、c面に沿って配向している、請求項4に記載の発光素子。
- 前記発光素子は、面を5つしか有していない、請求項1に記載の発光素子。
- 前記第1の面、第2の面、および第3の面は粗面であり、これにより、光抽出効率が80%を超える、請求項1に記載の発光素子。
- ウェーハーから発光素子のダイを少なくとも1つ分離する方法であって、
前記ウェーハーは、互いに平行な第1の表面と第2の表面とを規定し、
前記ウェーハーは、
III族窒化物含有基板と、ここで、当該基板はウルツ鉱型結晶構造を有し、当該結晶構造は、少なくとも第1のa面、第2のa面、および第3のa面を規定する、
前記基板上に形成された発光エピタキシャル構造と、
を少なくとも有し、
当該方法は、
前記第1のa面、第2のa面および第3のa面で構成されたスクライビング線に沿って、少なくとも前記第1の表面に対してスクライビングを行う工程と、
前記ウェーハーに対して、前記スクライブ線に沿ってブレーキングを行うことにより、前記ウェーハーからダイを分離する工程と、ここで、当該ブレーキングによって前記ダイには第1の面、第2の面、および第3の面が形成され、これら第1の面、第2の面、および第3の面は三角形を形成している、
を含む、方法。 - 前記第1の表面は前記基板の底面である、請求項8に記載の方法。
- 前記ブレーキングによって、前記第1の面、第2の面、および第3の面は粗面となる、請求項8に記載の方法。
- 前記ダイは、第4の面および第5の面を有し、当該第4の面および第5の面は、前記第1の表面の一部、および前記第2の表面の一部で構成される、請求項8に記載の方法。
- 前記第1の表面および第2の表面は、c面に沿って配向している、請求項11に記載の方法。
- 前記基板はバルクGaNを含む、請求項8に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35647310P | 2010-06-18 | 2010-06-18 | |
US61/356,473 | 2010-06-18 | ||
US13/163,482 US8293551B2 (en) | 2010-06-18 | 2011-06-17 | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US13/163,482 | 2011-06-17 |
Related Parent Applications (1)
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JP2013515583A Division JP5870097B2 (ja) | 2010-06-18 | 2011-06-20 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
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JP2016006881A JP2016006881A (ja) | 2016-01-14 |
JP6073988B2 true JP6073988B2 (ja) | 2017-02-01 |
Family
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JP2013515583A Active JP5870097B2 (ja) | 2010-06-18 | 2011-06-20 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
JP2015139276A Active JP6073988B2 (ja) | 2010-06-18 | 2015-07-12 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
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US (1) | US8293551B2 (ja) |
JP (2) | JP5870097B2 (ja) |
DE (1) | DE112011102068T5 (ja) |
WO (1) | WO2011160129A2 (ja) |
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US20110056429A1 (en) | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
JP5123331B2 (ja) * | 2010-01-18 | 2013-01-23 | シャープ株式会社 | 窒化物半導体チップの製造方法および窒化物半導体チップ |
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2011
- 2011-06-17 US US13/163,482 patent/US8293551B2/en active Active
- 2011-06-20 WO PCT/US2011/041106 patent/WO2011160129A2/en active Application Filing
- 2011-06-20 DE DE112011102068T patent/DE112011102068T5/de not_active Withdrawn
- 2011-06-20 JP JP2013515583A patent/JP5870097B2/ja active Active
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2015
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Also Published As
Publication number | Publication date |
---|---|
WO2011160129A3 (en) | 2012-03-01 |
CN102947492A (zh) | 2013-02-27 |
WO2011160129A2 (en) | 2011-12-22 |
JP2013535109A (ja) | 2013-09-09 |
US20110315999A1 (en) | 2011-12-29 |
US8293551B2 (en) | 2012-10-23 |
DE112011102068T5 (de) | 2013-03-28 |
JP5870097B2 (ja) | 2016-02-24 |
JP2016006881A (ja) | 2016-01-14 |
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