JP6073028B2 - マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法 - Google Patents

マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法 Download PDF

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JP6073028B2
JP6073028B2 JP2016061844A JP2016061844A JP6073028B2 JP 6073028 B2 JP6073028 B2 JP 6073028B2 JP 2016061844 A JP2016061844 A JP 2016061844A JP 2016061844 A JP2016061844 A JP 2016061844A JP 6073028 B2 JP6073028 B2 JP 6073028B2
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phase shift
film
layer
mask
silicon
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JP2016189002A5 (cg-RX-API-DMAC7.html
JP2016189002A (ja
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博明 宍戸
博明 宍戸
野澤　順
順 野澤
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2016061844A 2015-03-27 2016-03-25 マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法 Active JP6073028B2 (ja)

Applications Claiming Priority (2)

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JP2015067259 2015-03-27
JP2015067259 2015-03-27

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JP2016257484A Division JP6709540B2 (ja) 2015-03-27 2016-12-30 マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法

Publications (3)

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JP2016189002A JP2016189002A (ja) 2016-11-04
JP2016189002A5 JP2016189002A5 (cg-RX-API-DMAC7.html) 2016-12-15
JP6073028B2 true JP6073028B2 (ja) 2017-02-01

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JP2016061844A Active JP6073028B2 (ja) 2015-03-27 2016-03-25 マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法
JP2016257484A Active JP6709540B2 (ja) 2015-03-27 2016-12-30 マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法

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US (1) US10365556B2 (cg-RX-API-DMAC7.html)
JP (2) JP6073028B2 (cg-RX-API-DMAC7.html)
KR (1) KR102069960B1 (cg-RX-API-DMAC7.html)
TW (1) TWI682233B (cg-RX-API-DMAC7.html)
WO (1) WO2016158649A1 (cg-RX-API-DMAC7.html)

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JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10712655B2 (en) * 2016-07-25 2020-07-14 Hoya Corporation Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP6772037B2 (ja) * 2016-11-11 2020-10-21 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6740107B2 (ja) 2016-11-30 2020-08-12 Hoya株式会社 マスクブランク、転写用マスク及び半導体デバイスの製造方法
JP6812236B2 (ja) * 2016-12-27 2021-01-13 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6400763B2 (ja) * 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP7126836B2 (ja) * 2017-03-28 2022-08-29 Hoya株式会社 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びにパターン転写方法
JP6716629B2 (ja) * 2017-05-18 2020-07-01 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びその製造方法
EP4576661A3 (en) * 2017-05-22 2025-07-02 nChain Licensing AG Forcing the injection of a previous transaction's bytecode into a blockchain transaction
JP6998181B2 (ja) * 2017-11-14 2022-02-04 アルバック成膜株式会社 マスクブランク、位相シフトマスクおよびその製造方法
JP6547019B1 (ja) * 2018-02-22 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
TWI816568B (zh) * 2018-11-30 2023-09-21 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7350682B2 (ja) * 2020-03-23 2023-09-26 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク
DE102023112057A1 (de) * 2022-08-31 2024-02-29 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum herstellen von fotomasken

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JP3339716B2 (ja) * 1992-07-17 2002-10-28 株式会社東芝 露光用マスクの製造方法
KR0131192B1 (en) 1992-04-22 1998-04-14 Toshiba Corp Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
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JP5713953B2 (ja) * 2012-04-26 2015-05-07 信越化学工業株式会社 フォトマスクブランクおよびその製造方法
JP5795991B2 (ja) 2012-05-16 2015-10-14 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法、および位相シフトマスクの製造方法
JP6100096B2 (ja) 2013-05-29 2017-03-22 Hoya株式会社 マスクブランク、位相シフトマスク、これらの製造方法、および半導体デバイスの製造方法

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Publication number Publication date
US10365556B2 (en) 2019-07-30
KR20170123346A (ko) 2017-11-07
TW201640216A (zh) 2016-11-16
WO2016158649A1 (ja) 2016-10-06
JP6709540B2 (ja) 2020-06-17
JP2017058703A (ja) 2017-03-23
JP2016189002A (ja) 2016-11-04
TWI682233B (zh) 2020-01-11
US20180129130A1 (en) 2018-05-10
KR102069960B1 (ko) 2020-01-23

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