JP6072122B2 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP6072122B2
JP6072122B2 JP2015076934A JP2015076934A JP6072122B2 JP 6072122 B2 JP6072122 B2 JP 6072122B2 JP 2015076934 A JP2015076934 A JP 2015076934A JP 2015076934 A JP2015076934 A JP 2015076934A JP 6072122 B2 JP6072122 B2 JP 6072122B2
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JP
Japan
Prior art keywords
sic substrate
plane
substrate
interface
semiconductor
Prior art date
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Active
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JP2015076934A
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English (en)
Japanese (ja)
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JP2015146450A (ja
JP2015146450A5 (enrdf_load_stackoverflow
Inventor
清水　達雄
達雄 清水
四戸　孝
孝 四戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2015076934A priority Critical patent/JP6072122B2/ja
Publication of JP2015146450A publication Critical patent/JP2015146450A/ja
Publication of JP2015146450A5 publication Critical patent/JP2015146450A5/ja
Application granted granted Critical
Publication of JP6072122B2 publication Critical patent/JP6072122B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2015076934A 2015-04-03 2015-04-03 半導体素子 Active JP6072122B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015076934A JP6072122B2 (ja) 2015-04-03 2015-04-03 半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015076934A JP6072122B2 (ja) 2015-04-03 2015-04-03 半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013240158A Division JP5763154B2 (ja) 2013-11-20 2013-11-20 半導体素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015146450A JP2015146450A (ja) 2015-08-13
JP2015146450A5 JP2015146450A5 (enrdf_load_stackoverflow) 2015-12-03
JP6072122B2 true JP6072122B2 (ja) 2017-02-01

Family

ID=53890529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015076934A Active JP6072122B2 (ja) 2015-04-03 2015-04-03 半導体素子

Country Status (1)

Country Link
JP (1) JP6072122B2 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10665682B2 (en) 2018-09-14 2020-05-26 Kabushiki Kaisha Toshiba Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
US11015264B2 (en) 2018-09-14 2021-05-25 Kabushiki Kaisha Toshiba Diamond substrate, quantum device, quantum system, and method for manufacturing diamond substrate

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6602263B2 (ja) 2016-05-30 2019-11-06 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP6776204B2 (ja) 2017-08-25 2020-10-28 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP6896672B2 (ja) 2018-03-21 2021-06-30 株式会社東芝 半導体装置及びその製造方法
JP6790010B2 (ja) 2018-03-21 2020-11-25 株式会社東芝 半導体装置及びその製造方法
JP6862384B2 (ja) 2018-03-21 2021-04-21 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7500524B2 (ja) 2021-09-16 2024-06-17 株式会社東芝 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264190A (ja) * 2002-03-08 2003-09-19 Toshiba Corp 半導体装置及びその製造方法
JP2008098200A (ja) * 2006-10-05 2008-04-24 Kiyoyoshi Mizuno 成膜体およびその製造方法
WO2008123213A1 (ja) * 2007-03-26 2008-10-16 Kyoto University 半導体装置及び半導体製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10665682B2 (en) 2018-09-14 2020-05-26 Kabushiki Kaisha Toshiba Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
US11015264B2 (en) 2018-09-14 2021-05-25 Kabushiki Kaisha Toshiba Diamond substrate, quantum device, quantum system, and method for manufacturing diamond substrate

Also Published As

Publication number Publication date
JP2015146450A (ja) 2015-08-13

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