JP6070147B2 - 半導体レーザダイオード - Google Patents

半導体レーザダイオード Download PDF

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Publication number
JP6070147B2
JP6070147B2 JP2012273422A JP2012273422A JP6070147B2 JP 6070147 B2 JP6070147 B2 JP 6070147B2 JP 2012273422 A JP2012273422 A JP 2012273422A JP 2012273422 A JP2012273422 A JP 2012273422A JP 6070147 B2 JP6070147 B2 JP 6070147B2
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JP2014120556A (ja
JP2014120556A5 (enExample
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公治 黒木
公治 黒木
隆 元田
隆 元田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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JP2012273422A 2012-12-14 2012-12-14 半導体レーザダイオード Active JP6070147B2 (ja)

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JP2012273422A JP6070147B2 (ja) 2012-12-14 2012-12-14 半導体レーザダイオード

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JP2012273422A JP6070147B2 (ja) 2012-12-14 2012-12-14 半導体レーザダイオード

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JP2014120556A JP2014120556A (ja) 2014-06-30
JP2014120556A5 JP2014120556A5 (enExample) 2016-01-07
JP6070147B2 true JP6070147B2 (ja) 2017-02-01

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JP2012273422A Active JP6070147B2 (ja) 2012-12-14 2012-12-14 半導体レーザダイオード

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018003335A1 (ja) * 2016-06-30 2019-04-25 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム
WO2022102052A1 (ja) * 2020-11-12 2022-05-19 三菱電機株式会社 レーザダイオードバーの端面成膜方法
CN113948969A (zh) * 2021-09-03 2022-01-18 中国工程物理研究院应用电子学研究所 一种高效率半导体激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810778B2 (ja) * 1986-10-14 1996-01-31 ソニー株式会社 半導体レ−ザ
JPH05190972A (ja) * 1992-01-13 1993-07-30 Eastman Kodak Japan Kk レーザダイオード
JPH09199782A (ja) * 1996-01-16 1997-07-31 Matsushita Electric Ind Co Ltd 半導体レーザ
JPH09321379A (ja) * 1996-05-29 1997-12-12 Shimadzu Corp 半導体レーザ
JP2003264340A (ja) * 2002-03-11 2003-09-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム
JP4336127B2 (ja) * 2002-03-15 2009-09-30 古河電気工業株式会社 光ファイバ増幅器
JP2006294984A (ja) * 2005-04-13 2006-10-26 Matsushita Electric Ind Co Ltd 半導体レーザ素子とその製造方法およびそれを用いた光ピックアップ装置
JP2010129812A (ja) * 2008-11-28 2010-06-10 Denso Corp 半導体レーザ

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