JP2014120556A5 - - Google Patents
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- Publication number
- JP2014120556A5 JP2014120556A5 JP2012273422A JP2012273422A JP2014120556A5 JP 2014120556 A5 JP2014120556 A5 JP 2014120556A5 JP 2012273422 A JP2012273422 A JP 2012273422A JP 2012273422 A JP2012273422 A JP 2012273422A JP 2014120556 A5 JP2014120556 A5 JP 2014120556A5
- Authority
- JP
- Japan
- Prior art keywords
- face
- rear end
- laser diode
- current
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005253 cladding Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 claims 3
- 230000000903 blocking effect Effects 0.000 claims 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012273422A JP6070147B2 (ja) | 2012-12-14 | 2012-12-14 | 半導体レーザダイオード |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012273422A JP6070147B2 (ja) | 2012-12-14 | 2012-12-14 | 半導体レーザダイオード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014120556A JP2014120556A (ja) | 2014-06-30 |
| JP2014120556A5 true JP2014120556A5 (enExample) | 2016-01-07 |
| JP6070147B2 JP6070147B2 (ja) | 2017-02-01 |
Family
ID=51175163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012273422A Active JP6070147B2 (ja) | 2012-12-14 | 2012-12-14 | 半導体レーザダイオード |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6070147B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109417274B (zh) * | 2016-06-30 | 2021-12-07 | 新唐科技日本株式会社 | 半导体激光装置、半导体激光模块及熔接用激光光源系统 |
| US12341316B2 (en) * | 2020-11-12 | 2025-06-24 | Mitsubishi Electric Corporation | Method for forming film on end-surface of laser diode bar |
| CN113948969A (zh) * | 2021-09-03 | 2022-01-18 | 中国工程物理研究院应用电子学研究所 | 一种高效率半导体激光器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0810778B2 (ja) * | 1986-10-14 | 1996-01-31 | ソニー株式会社 | 半導体レ−ザ |
| JPH05190972A (ja) * | 1992-01-13 | 1993-07-30 | Eastman Kodak Japan Kk | レーザダイオード |
| JPH09199782A (ja) * | 1996-01-16 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
| JPH09321379A (ja) * | 1996-05-29 | 1997-12-12 | Shimadzu Corp | 半導体レーザ |
| JP2003264340A (ja) * | 2002-03-11 | 2003-09-19 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム |
| JP4336127B2 (ja) * | 2002-03-15 | 2009-09-30 | 古河電気工業株式会社 | 光ファイバ増幅器 |
| JP2006294984A (ja) * | 2005-04-13 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子とその製造方法およびそれを用いた光ピックアップ装置 |
| JP2010129812A (ja) * | 2008-11-28 | 2010-06-10 | Denso Corp | 半導体レーザ |
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2012
- 2012-12-14 JP JP2012273422A patent/JP6070147B2/ja active Active