JP6065663B2 - 半導体光導波路素子を作製する方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 443
- 230000003287 optical effect Effects 0.000 title claims description 151
- 238000000034 method Methods 0.000 title claims description 21
- 239000010410 layer Substances 0.000 claims description 194
- 239000010408 film Substances 0.000 claims description 182
- 239000012792 core layer Substances 0.000 claims description 133
- 238000005253 cladding Methods 0.000 claims description 82
- 238000004519 manufacturing process Methods 0.000 claims description 71
- 150000001875 compounds Chemical class 0.000 claims description 57
- 238000005530 etching Methods 0.000 claims description 49
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- 239000010409 thin film Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 description 16
- JUJBNYBVVQSIOU-UHFFFAOYSA-M sodium;4-[2-(4-iodophenyl)-3-(4-nitrophenyl)tetrazol-2-ium-5-yl]benzene-1,3-disulfonate Chemical compound [Na+].C1=CC([N+](=O)[O-])=CC=C1N1[N+](C=2C=CC(I)=CC=2)=NC(C=2C(=CC(=CC=2)S([O-])(=O)=O)S([O-])(=O)=O)=N1 JUJBNYBVVQSIOU-UHFFFAOYSA-M 0.000 description 14
- 230000001902 propagating effect Effects 0.000 description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000008034 disappearance Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
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- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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Description
加工された絶縁膜29は第1軸Ax1の方向に延在する一対の第1エッジを有する。加工された絶縁膜29の一対の第2エッジの間隔は第1横幅WST0を有する。第1絶縁膜マスク35の一対の第2エッジの間隔は第2横幅WST1を有する。第2横幅WST1は第1横幅WST0より小さく、第2横幅WST1は第1コア層の横幅及び第1半導体メサの横幅を規定している。
第1半導体メサ39は第2半導体メサ49上に設けられる。第2半導体メサ49は第3半導体メサ55上に設けられる。第3半導体メサ55は基板11の主面11a上に設けられる。基板11の主面11aは第1軸Bx1に沿って配列された第1エリア11b及び第2エリア11cを含む。
Claims (6)
- 半導体光導波路素子を作製する方法であって、
クラッド層のための第1III−V化合物半導体層、第1コア層のための第1半導体層、中間クラッド層のための第2III−V化合物半導体層、及び第2コア層のための第2半導体層を含む半導体積層を基板上に形成する工程と、
前記半導体積層上に絶縁膜を形成する工程と、
第1半導体メサのための第1マスクを前記絶縁膜上に形成する工程と、
前記第1マスクを用いて前記絶縁膜のエッチングにより前記第1マスクの形状に合わせた段差を形成して、該段差により区分けされる厚膜部分及び薄膜部分を含む加工された絶縁膜を形成する工程と、
前記段差を形成した後に、第2半導体メサのための第2マスクを前記加工された絶縁膜上に形成する工程と、
前記第2マスクを用いて前記加工された絶縁膜をエッチングして、第1絶縁膜マスクに形成する工程と、
前記第1絶縁膜マスクを用いて前記クラッド層の途中まで前記第1III−V化合物半導体層をエッチングする工程と、
前記第1III−V化合物半導体層をエッチングした後に、前記第1絶縁膜マスクの全面をエッチングして、前記第1絶縁膜マスクの前記薄膜部分を消失させて第1半導体メサの形状を規定しており前記第1絶縁膜マスクの厚膜部分の形状を有する第2絶縁膜マスクを形成する工程と、
前記第2絶縁膜マスクを用いて、前記第1III−V化合物半導体層の残り部分及び前記第1半導体層をエッチングして、前記第1コア層及び前記第1半導体メサを形成する工程と、
を備え、
前記加工された絶縁膜は第1軸の方向に延在する一対の第1エッジを有しており、前記加工された絶縁膜の前記一対の第1エッジの間隔は第1横幅を有しており、
前記第1絶縁膜マスクは前記第1軸の方向に延在する一対の第2エッジを有し、前記第1絶縁膜マスクの前記一対の第2エッジの間隔は第2横幅を有しており、前記第2横幅は前記第1横幅より小さく、
前記第2横幅は、前記第1コア層の横幅及び前記第1半導体メサの横幅を規定している、半導体光導波路素子を作製する方法。 - 前記第1コア層及び前記第1半導体メサを形成した後に、前記第1III−V化合物半導体層の残り部分及び前記第2III−V化合物半導体層をエッチングして、中間クラッド層を形成する工程を更に備え、
前記中間クラッド層の横幅は前記第1コア層の横幅と同じであり、
前記第2半導体メサは、前記中間クラッド層及び前記第1コア層を含む、請求項1に記載された半導体光導波路素子を作製する方法。 - 前記中間クラッド層を形成する前記工程は、前記第1半導体メサの側面、前記第2絶縁膜マスク及び前記基板上に絶縁膜を成長する工程と、
前記絶縁膜をエッチングして前記第2絶縁膜マスクを露出させて絶縁膜マスクを形成すると共に、前記第1コア層上の前記第1III−V化合物半導体層の残り部分の上面、及び前記第2半導体層上の前記第2III−V化合物半導体層の上面を露出させる工程と、
前記絶縁膜マスクを用いて、前記第1コア層上の前記第1III−V化合物半導体層の残り部分、及び前記第2半導体層上の前記第2III−V化合物半導体層のウエットエッチングを行って、第2半導体メサを形成する工程と、
前記絶縁膜マスクを除去する工程と、
を備え、
前記第1半導体メサの上面上において、前記絶縁膜は前記第2絶縁膜マスクを覆っている、請求項1又は請求項2に記載された半導体光導波路素子を作製する方法。 - 前記第2半導体メサを形成した後に、第3半導体メサを規定する第3絶縁膜マスクを形成する工程と、
前記第3絶縁膜マスクを用いて前記第2コア層をエッチングして、前記第3半導体メサを形成する工程と、
を更に備える、請求項3に記載された半導体光導波路素子を作製する方法。 - 前記第3半導体メサの上面上に第1電極を形成すると共に、前記第1半導体メサの上面に第2電極を形成する工程を更に備える、請求項4に記載された半導体光導波路素子を作製する方法。
- 前記基板はInPからなり、
前記中間クラッド層はn型InPからなり、
前記クラッド層はp型InPからなる、請求項1〜請求項5のいずれか一項に記載された半導体光導波路素子を作製する方法。
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JP2013046976A JP6065663B2 (ja) | 2013-03-08 | 2013-03-08 | 半導体光導波路素子を作製する方法 |
US14/198,261 US9229168B2 (en) | 2013-03-08 | 2014-03-05 | Semiconductor optical waveguide device and method for manufacturing the same |
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US9122003B2 (en) * | 2012-07-18 | 2015-09-01 | Sumitomo Electric Industries, Ltd. | Semiconductor optical device |
JP2015022077A (ja) * | 2013-07-17 | 2015-02-02 | 住友電気工業株式会社 | スポットサイズ変換器を作製する方法 |
JP6394454B2 (ja) * | 2015-03-24 | 2018-09-26 | 住友電気工業株式会社 | マッハツェンダー変調器 |
JP6458143B2 (ja) | 2015-06-02 | 2019-01-23 | 日本電信電話株式会社 | 半導体光変調素子 |
EP3145037B1 (en) * | 2015-09-21 | 2021-04-07 | Huawei Technologies Co., Ltd. | Semiconductor optical apparatus |
JP6387373B2 (ja) * | 2016-06-24 | 2018-09-05 | 株式会社フジクラ | 微小光回路および光モード変換器 |
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