JP6064232B2 - 半導体デバイスを製造するための方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims description 49
- 230000007547 defect Effects 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 239000003989 dielectric material Substances 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
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- 239000000758 substrate Substances 0.000 description 26
- 230000015556 catabolic process Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
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- 238000009499 grossing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
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- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
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Description
Claims (11)
- 半導体層(5)及び金属層(7)を備える半導体構造を製造するための方法であって、
a)欠陥及び/又は転位(11a、11b、11c)を含む半導体層(5)を準備するステップであって、前記半導体層(5)は、GaN、シリコン、ストレインド・シリコン、ゲルマニウム、SiGe、又はIII‐V材料、III/N材料、二元若しくは三元若しくは四元合金のいずれか1つから選択される、ステップと、
b)前記欠陥及び/又は転位(11a、11b、11c)の1つ以上の位置で前記欠陥及び/又は転位(11a、11b、11c)の一部が除去されるように材料を除去し、それによって、前記半導体層(5)内において前記半導体層(5)における前記欠陥及び/又は転位(11a、11b、11c)の頂部上に穴(13a、13b、13c)を形成するステップと、
c)前記穴(13a、13b、13c)を不動態化するステップであって、前記穴を誘電材料(15)で少なくとも部分的に充填するステップを含む、ステップと、
d)前記半導体層(5)の直上、及び、前記誘電材料(15)で充填された前記穴(13a、13b、13c)の直上に前記金属層(7)を設け、これにより半導体‐金属接合を形成するステップであって、前記金属層は、Al、Au、Pt、クロム、パラジウム、タングステン、モリブデン又はそれらと同じものからのシリサイド、多結晶若しくは非結晶材料、及びそれらの合金又は組み合わせのいずれか1つから選択される、ステップと、を含む、方法。 - 前記材料を除去するステップb)は、前記欠陥及び/又は転位(11a、11b、11c)の1つ以上の位置で優先的に前記半導体層(5)の表面をエッチングするステップを含む、請求項1に記載の方法。
- 前記誘電材料(15)は、シリコン酸化物、シリコン窒化物及びそれらの混合物のいずれか1つから選択される、請求項1又は2に記載の方法。
- 前記誘電材料(15)は、ステップb)において形成された前記穴(13a、13b、13c)を完全に充填する、請求項1〜3のいずれか一項に記載の方法。
- ステップc)の後かつステップd)の前に、前記半導体層(5)の表面を研磨するステップe)を更に含む、請求項1〜4のいずれか一項に記載の方法。
- 前記金属層は、物理気相成長(PVD)、スパッタリング及び化学気相成長のいずれか1つによって設けられる、請求項1〜5のいずれか一項に記載の方法。
- 半導体層(5)と、前記半導体層(5)の上に設けられた金属層(7)と、を備える半導体構造であって、
誘電材料(15)で少なくとも部分的に充填された穴(13a、13b、13c)が、前記半導体層(5)内において前記半導体層における転位及び/又は欠陥の頂部上に配置され、
前記半導体層(5)の直上、及び、前記誘電材料(15)で充填された前記穴(13a、13b、13c)の直上に前記金属層(7)が設けられ、これにより半導体‐金属接合を形成し、
前記半導体層(5)は、GaN、シリコン、ストレインド・シリコン、ゲルマニウム、SiGe、又はIII‐V材料、III/N材料、二元若しくは三元若しくは四元合金のいずれか1つから選択され、前記金属層は、Al、Au、Pt、クロム、パラジウム、タングステン、モリブデン又はそれらと同じものからのシリサイド、多結晶若しくは非結晶材料、及びそれらの合金又は組み合わせのいずれか1つから選択される、半導体構造。 - 前記金属層(7)は前記半導体層(5)上に設けられ、前記穴は前記金属層(7)との界面まで延びる、請求項7に記載の半導体構造。
- 前記誘電材料(15)は、シリコン酸化物、シリコン窒化物及びそれらの混合物のいずれか1つから選択される、請求項7又は8に記載の半導体構造。
- 前記穴は、前記誘電材料(15)で完全に充填される、請求項7〜9のいずれか一項に記載の半導体構造。
- 請求項7〜10のいずれか一項に記載の前記半導体構造、特に、ショットキーダイオードを使用するデバイス。
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FR1005133A FR2969815B1 (fr) | 2010-12-27 | 2010-12-27 | Procédé de fabrication d'un dispositif semi-conducteur |
PCT/EP2011/006350 WO2012089315A1 (en) | 2010-12-27 | 2011-12-15 | A method for fabricating a semiconductor device |
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JP6064232B2 true JP6064232B2 (ja) | 2017-01-25 |
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US (1) | US20140370695A1 (ja) |
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KR (2) | KR20140098769A (ja) |
CN (2) | CN104025268A (ja) |
DE (1) | DE112011106083T8 (ja) |
FR (1) | FR2969815B1 (ja) |
SG (1) | SG11201403121YA (ja) |
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CN103280502B (zh) | 2013-05-23 | 2016-12-28 | 安徽三安光电有限公司 | 发光器件及其制作方法 |
DE112016004600T5 (de) * | 2015-10-07 | 2018-06-21 | Sumitomo Electric Industries, Ltd. | Epitaktisches Siliziumkarbidsubstrat und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung |
FR3060837B1 (fr) * | 2016-12-15 | 2019-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif comprenant une couche de materiau iii-n avec des defauts de surface |
CN113445131A (zh) * | 2021-06-28 | 2021-09-28 | 中国科学院上海光学精密机械研究所 | 抑制来自氮化镓籽晶缺陷的方法及氮化镓单晶和应用 |
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2011
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- 2011-12-15 CN CN201180075548.7A patent/CN104025268A/zh active Pending
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- 2011-12-15 WO PCT/EP2011/006350 patent/WO2012089315A1/en active Application Filing
- 2011-12-15 CN CN201910541192.XA patent/CN110189996A/zh active Pending
- 2011-12-15 SG SG11201403121YA patent/SG11201403121YA/en unknown
- 2011-12-15 DE DE112011106083.1T patent/DE112011106083T8/de active Active
- 2011-12-15 KR KR1020187022619A patent/KR20180091955A/ko active Search and Examination
- 2011-12-15 US US14/362,305 patent/US20140370695A1/en not_active Abandoned
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WO2012089315A1 (en) | 2012-07-05 |
TW201234491A (en) | 2012-08-16 |
DE112011106083T5 (de) | 2014-12-31 |
TWI584380B (zh) | 2017-05-21 |
KR20180091955A (ko) | 2018-08-16 |
CN110189996A (zh) | 2019-08-30 |
CN104025268A (zh) | 2014-09-03 |
KR20140098769A (ko) | 2014-08-08 |
DE112011106083T8 (de) | 2015-03-26 |
JP2015500572A (ja) | 2015-01-05 |
FR2969815A1 (fr) | 2012-06-29 |
SG11201403121YA (en) | 2014-10-30 |
US20140370695A1 (en) | 2014-12-18 |
FR2969815B1 (fr) | 2013-11-22 |
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