GB0806556D0 - Silicon wafers - Google Patents

Silicon wafers

Info

Publication number
GB0806556D0
GB0806556D0 GBGB0806556.7A GB0806556A GB0806556D0 GB 0806556 D0 GB0806556 D0 GB 0806556D0 GB 0806556 A GB0806556 A GB 0806556A GB 0806556 D0 GB0806556 D0 GB 0806556D0
Authority
GB
United Kingdom
Prior art keywords
silicon wafers
wafers
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0806556.7A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Priority to GBGB0806556.7A priority Critical patent/GB0806556D0/en
Publication of GB0806556D0 publication Critical patent/GB0806556D0/en
Priority to PCT/GB2009/000930 priority patent/WO2009125187A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
GBGB0806556.7A 2008-04-11 2008-04-11 Silicon wafers Ceased GB0806556D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0806556.7A GB0806556D0 (en) 2008-04-11 2008-04-11 Silicon wafers
PCT/GB2009/000930 WO2009125187A1 (en) 2008-04-11 2009-04-09 A method of etching silicon wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0806556.7A GB0806556D0 (en) 2008-04-11 2008-04-11 Silicon wafers

Publications (1)

Publication Number Publication Date
GB0806556D0 true GB0806556D0 (en) 2008-05-14

Family

ID=39433448

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0806556.7A Ceased GB0806556D0 (en) 2008-04-11 2008-04-11 Silicon wafers

Country Status (2)

Country Link
GB (1) GB0806556D0 (en)
WO (1) WO2009125187A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101740692B1 (en) * 2009-09-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing electrode for power storage device and method for manufacturing power storage device
NO20100616A1 (en) * 2010-04-28 2011-10-31 Innotech Solar Asa Method and apparatus for removing a defect from a solar cell
FR2969815B1 (en) * 2010-12-27 2013-11-22 Soitec Silicon On Insulator Tech METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
FR2969813B1 (en) * 2010-12-27 2013-11-08 Soitec Silicon On Insulator METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
US4320168A (en) * 1976-12-16 1982-03-16 Solarex Corporation Method of forming semicrystalline silicon article and product produced thereby
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4431858A (en) * 1982-05-12 1984-02-14 University Of Florida Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
DE10032279B4 (en) * 2000-07-03 2006-09-28 Christian-Albrechts-Universität Zu Kiel Electrical passivation of the peripheral areas of solar cells
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
CN100546006C (en) * 2003-09-09 2009-09-30 Csg索拉尔有限公司 Improving one's methods of etching silicon

Also Published As

Publication number Publication date
WO2009125187A1 (en) 2009-10-15

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)