JP6057379B2 - 窒化銅微粒子およびその製造方法 - Google Patents

窒化銅微粒子およびその製造方法 Download PDF

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Publication number
JP6057379B2
JP6057379B2 JP2013225296A JP2013225296A JP6057379B2 JP 6057379 B2 JP6057379 B2 JP 6057379B2 JP 2013225296 A JP2013225296 A JP 2013225296A JP 2013225296 A JP2013225296 A JP 2013225296A JP 6057379 B2 JP6057379 B2 JP 6057379B2
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Japan
Prior art keywords
copper
fine particles
nitride fine
copper nitride
particles according
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JP2013225296A
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English (en)
Japanese (ja)
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JP2014166939A5 (enExample
JP2014166939A (ja
Inventor
考志 中村
考志 中村
蛯名　武雄
武雄 蛯名
林　拓道
拓道 林
花岡　隆昌
隆昌 花岡
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Priority to JP2013225296A priority Critical patent/JP6057379B2/ja
Priority to KR1020157020804A priority patent/KR20150112984A/ko
Priority to PCT/JP2014/052321 priority patent/WO2014119748A1/ja
Priority to CN201480006826.7A priority patent/CN104981427A/zh
Publication of JP2014166939A publication Critical patent/JP2014166939A/ja
Publication of JP2014166939A5 publication Critical patent/JP2014166939A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • C01B21/0625—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
JP2013225296A 2013-01-31 2013-10-30 窒化銅微粒子およびその製造方法 Expired - Fee Related JP6057379B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013225296A JP6057379B2 (ja) 2013-01-31 2013-10-30 窒化銅微粒子およびその製造方法
KR1020157020804A KR20150112984A (ko) 2013-01-31 2014-01-31 질화구리 미립자 및 그 제조 방법
PCT/JP2014/052321 WO2014119748A1 (ja) 2013-01-31 2014-01-31 窒化銅微粒子およびその製造方法
CN201480006826.7A CN104981427A (zh) 2013-01-31 2014-01-31 氮化铜微粒及其制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013017510 2013-01-31
JP2013017510 2013-01-31
JP2013225296A JP6057379B2 (ja) 2013-01-31 2013-10-30 窒化銅微粒子およびその製造方法

Publications (3)

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JP2014166939A JP2014166939A (ja) 2014-09-11
JP2014166939A5 JP2014166939A5 (enExample) 2016-06-23
JP6057379B2 true JP6057379B2 (ja) 2017-01-11

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JP (1) JP6057379B2 (enExample)
KR (1) KR20150112984A (enExample)
CN (1) CN104981427A (enExample)
WO (1) WO2014119748A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015147561A1 (ko) * 2014-03-26 2015-10-01 전자부품연구원 전도체 패턴의 형성이 용이한 복합소재와 그 복합소재를 제조하는 방법 및 상기 복합소재에서 시드 소재인 구리질화물 및 그 구리질화물을 합성하는 방법
JP6574553B2 (ja) * 2014-06-26 2019-09-11 昭和電工株式会社 導電パターン形成用組成物および導電パターン形成方法
KR102303767B1 (ko) * 2017-11-01 2021-09-23 한국전자기술연구원 전도체 패턴용 구리질화물 분말의 제조 방법
CN110642304B (zh) * 2019-10-09 2021-12-31 上海师范大学 一种超级电容器用三金属氮化物材料及其制备方法
CN111450867A (zh) * 2020-05-09 2020-07-28 青岛科技大学 用于电催化二氧化碳还原的Cu3N纳米催化剂的制备方法
CN115057417B (zh) * 2022-06-08 2023-09-12 安徽大学 一种氮化铜纳米片的制备及其在甲酸盐电合成中的应用
CN116516280A (zh) * 2023-04-27 2023-08-01 常州大学 一种高效节能的工件氮化方法
CN116924697B (zh) * 2023-07-31 2025-08-29 上海耀皮工程玻璃有限公司 一种Low-E镀膜玻璃调色层及其制备方法和用途
CN119282131A (zh) * 2024-11-18 2025-01-10 济源星翰新材料科技有限公司 一种微米铜粉的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122230A1 (ja) * 2004-06-07 2005-12-22 Kyushu Institute Of Technology 銅表面の処理方法及び銅パターン配線形成方法、並びに該方法を用いて作成された半導体装置
JP3870273B2 (ja) * 2004-12-28 2007-01-17 国立大学法人九州工業大学 銅パターン配線形成方法及び該方法を用いて作成された半導体装置、並びにナノ銅金属粒子
JP5778382B2 (ja) * 2008-10-22 2015-09-16 東ソー株式会社 金属膜製造用組成物、金属膜の製造方法及び金属粉末の製造方法
JP5243510B2 (ja) * 2010-10-01 2013-07-24 富士フイルム株式会社 配線材料、配線の製造方法、及びナノ粒子分散液

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CN104981427A (zh) 2015-10-14
WO2014119748A1 (ja) 2014-08-07
KR20150112984A (ko) 2015-10-07
JP2014166939A (ja) 2014-09-11

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