JP6056435B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6056435B2
JP6056435B2 JP2012268315A JP2012268315A JP6056435B2 JP 6056435 B2 JP6056435 B2 JP 6056435B2 JP 2012268315 A JP2012268315 A JP 2012268315A JP 2012268315 A JP2012268315 A JP 2012268315A JP 6056435 B2 JP6056435 B2 JP 6056435B2
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Japan
Prior art keywords
layer
insulating film
gate insulating
region
gate
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JP2012268315A
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Japanese (ja)
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JP2014116401A (ja
JP2014116401A5 (enExample
Inventor
理 谷口
理 谷口
竹内　克彦
克彦 竹内
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012268315A priority Critical patent/JP6056435B2/ja
Priority to TW102139859A priority patent/TWI605589B/zh
Priority to CN201310571587.7A priority patent/CN103872120A/zh
Priority to US14/087,310 priority patent/US9082749B2/en
Publication of JP2014116401A publication Critical patent/JP2014116401A/ja
Publication of JP2014116401A5 publication Critical patent/JP2014116401A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
JP2012268315A 2012-12-07 2012-12-07 半導体装置 Active JP6056435B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012268315A JP6056435B2 (ja) 2012-12-07 2012-12-07 半導体装置
TW102139859A TWI605589B (zh) 2012-12-07 2013-11-01 半導體裝置及其製造方法
CN201310571587.7A CN103872120A (zh) 2012-12-07 2013-11-13 半导体装置和制造半导体装置的方法
US14/087,310 US9082749B2 (en) 2012-12-07 2013-11-22 Semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012268315A JP6056435B2 (ja) 2012-12-07 2012-12-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2014116401A JP2014116401A (ja) 2014-06-26
JP2014116401A5 JP2014116401A5 (enExample) 2015-04-16
JP6056435B2 true JP6056435B2 (ja) 2017-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012268315A Active JP6056435B2 (ja) 2012-12-07 2012-12-07 半導体装置

Country Status (4)

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US (1) US9082749B2 (enExample)
JP (1) JP6056435B2 (enExample)
CN (1) CN103872120A (enExample)
TW (1) TWI605589B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11881506B2 (en) 2021-07-27 2024-01-23 Globalfoundries U.S. Inc. Gate structures with air gap isolation features

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JP2014183125A (ja) * 2013-03-18 2014-09-29 Fujitsu Ltd 半導体装置
US10867792B2 (en) * 2014-02-18 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
CN104037219B (zh) * 2014-07-02 2017-01-18 西安电子科技大学 一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法
CN104037217B (zh) * 2014-07-02 2017-01-25 西安电子科技大学 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法
CN104064595B (zh) * 2014-07-02 2016-11-09 西安电子科技大学 一种基于槽栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037221B (zh) * 2014-07-02 2017-01-25 西安电子科技大学 一种基于极化效应的复合场板高性能AlGaN/GaN HEMT器件结构及制作方法
CN104037220B (zh) * 2014-07-02 2017-01-25 西安电子科技大学 一种基于偶极子层浮栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037216B (zh) * 2014-07-02 2016-11-16 西安电子科技大学 一种基于偶极层的高压AlGaN/GaN MISHEMT器件结构及其制作方法
CN104037215B (zh) * 2014-07-02 2017-01-18 西安电子科技大学 一种基于聚合物的增强型AlGaN/GaN MISHEMT器件结构及其制作方法
US9640620B2 (en) * 2014-11-03 2017-05-02 Texas Instruments Incorporated High power transistor with oxide gate barriers
JP6705383B2 (ja) * 2014-11-04 2020-06-03 ソニー株式会社 半導体装置、アンテナスイッチ回路および無線通信装置
CN104576757B (zh) * 2014-12-31 2017-07-18 深圳市华星光电技术有限公司 侧栅极tft开关及液晶显示装置
JP6287951B2 (ja) * 2015-05-14 2018-03-07 三菱電機株式会社 化合物半導体装置
JP6222174B2 (ja) * 2015-06-26 2017-11-01 トヨタ自動車株式会社 窒化物半導体装置
JP6523885B2 (ja) 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP6567468B2 (ja) 2016-06-20 2019-08-28 株式会社東芝 半導体装置、電源回路、及び、コンピュータ
JP6659488B2 (ja) * 2016-07-22 2020-03-04 株式会社東芝 半導体装置、電源回路、コンピュータ、及び半導体装置の製造方法
CN106373991B (zh) * 2016-11-01 2019-10-01 电子科技大学 一种氮面增强型氮化镓基异质结场效应管
TWI613814B (zh) * 2016-11-29 2018-02-01 新唐科技股份有限公司 增強型高電子遷移率電晶體元件
TWI661555B (zh) * 2017-12-28 2019-06-01 Nuvoton Technology Corporation 增強型高電子遷移率電晶體元件
FR3080710B1 (fr) * 2018-04-25 2021-12-24 Commissariat Energie Atomique Transistor hemt et procedes de fabrication favorisant une longueur et des fuites de grille reduites
JP2021111666A (ja) * 2020-01-08 2021-08-02 ソニーセミコンダクタソリューションズ株式会社 化合物半導体装置及び化合物半導体装置の製造方法
US12414319B2 (en) * 2020-07-20 2025-09-09 Sony Semiconductor Solutions Corporation Semiconductor device, semiconductor module, and wireless communication apparatus
CN112098790B (zh) * 2020-08-05 2023-04-14 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 基于mis-hemt的边界陷阱的能量分布测试方法及系统
CN114551590B (zh) 2020-11-26 2025-09-26 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
KR102547803B1 (ko) * 2021-05-18 2023-06-26 삼성전자주식회사 고 전자 이동도 트랜지스터
CN113594232B (zh) * 2021-08-09 2024-12-10 迪优未来科技(清远)有限公司 一种多插指埋栅结构的增强型高压hemt器件及其制备方法
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
CN114373804A (zh) * 2021-12-14 2022-04-19 华为技术有限公司 赝配高迁移率晶体管、低噪声放大器及相关装置

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JPH11150264A (ja) 1997-09-12 1999-06-02 Sony Corp 半導体装置およびその製造方法ならびに無線通信装置
US6365925B2 (en) 1997-09-12 2002-04-02 Sony Corporation Semiconductor device
JP3189779B2 (ja) * 1998-03-20 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP2004273486A (ja) * 2003-03-05 2004-09-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5384029B2 (ja) 2007-08-23 2014-01-08 日本碍子株式会社 Ｍｉｓゲート構造型のｈｅｍｔ素子およびｍｉｓゲート構造型のｈｅｍｔ素子の作製方法
JP5534661B2 (ja) * 2008-09-11 2014-07-02 株式会社東芝 半導体装置
JP2010186943A (ja) * 2009-02-13 2010-08-26 Sharp Corp 窒化物半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11881506B2 (en) 2021-07-27 2024-01-23 Globalfoundries U.S. Inc. Gate structures with air gap isolation features

Also Published As

Publication number Publication date
JP2014116401A (ja) 2014-06-26
US20140159117A1 (en) 2014-06-12
CN103872120A (zh) 2014-06-18
TW201428964A (zh) 2014-07-16
US9082749B2 (en) 2015-07-14
TWI605589B (zh) 2017-11-11

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