TWI605589B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
- Publication number
- TWI605589B TWI605589B TW102139859A TW102139859A TWI605589B TW I605589 B TWI605589 B TW I605589B TW 102139859 A TW102139859 A TW 102139859A TW 102139859 A TW102139859 A TW 102139859A TW I605589 B TWI605589 B TW I605589B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- insulating film
- gate
- semiconductor device
- high resistance
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 333
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000010410 layer Substances 0.000 claims description 852
- 230000000903 blocking effect Effects 0.000 claims description 140
- 239000012535 impurity Substances 0.000 claims description 61
- 239000011229 interlayer Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000002344 surface layer Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 description 224
- 239000000463 material Substances 0.000 description 60
- 150000001875 compounds Chemical class 0.000 description 40
- 239000000758 substrate Substances 0.000 description 34
- 238000010586 diagram Methods 0.000 description 26
- 239000013078 crystal Substances 0.000 description 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 15
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 11
- 238000009751 slip forming Methods 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012268315A JP6056435B2 (ja) | 2012-12-07 | 2012-12-07 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201428964A TW201428964A (zh) | 2014-07-16 |
| TWI605589B true TWI605589B (zh) | 2017-11-11 |
Family
ID=50880019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102139859A TWI605589B (zh) | 2012-12-07 | 2013-11-01 | 半導體裝置及其製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9082749B2 (enExample) |
| JP (1) | JP6056435B2 (enExample) |
| CN (1) | CN103872120A (enExample) |
| TW (1) | TWI605589B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014183125A (ja) * | 2013-03-18 | 2014-09-29 | Fujitsu Ltd | 半導体装置 |
| US10867792B2 (en) * | 2014-02-18 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same |
| CN104037219B (zh) * | 2014-07-02 | 2017-01-18 | 西安电子科技大学 | 一种基于栅结构的增强型AlGaN/GaN HEMT器件结构及其制作方法 |
| CN104037217B (zh) * | 2014-07-02 | 2017-01-25 | 西安电子科技大学 | 一种基于复合偶极层的AlGaN/GaN HEMT开关器件结构及制作方法 |
| CN104064595B (zh) * | 2014-07-02 | 2016-11-09 | 西安电子科技大学 | 一种基于槽栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法 |
| CN104037221B (zh) * | 2014-07-02 | 2017-01-25 | 西安电子科技大学 | 一种基于极化效应的复合场板高性能AlGaN/GaN HEMT器件结构及制作方法 |
| CN104037220B (zh) * | 2014-07-02 | 2017-01-25 | 西安电子科技大学 | 一种基于偶极子层浮栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法 |
| CN104037216B (zh) * | 2014-07-02 | 2016-11-16 | 西安电子科技大学 | 一种基于偶极层的高压AlGaN/GaN MISHEMT器件结构及其制作方法 |
| CN104037215B (zh) * | 2014-07-02 | 2017-01-18 | 西安电子科技大学 | 一种基于聚合物的增强型AlGaN/GaN MISHEMT器件结构及其制作方法 |
| US9640620B2 (en) * | 2014-11-03 | 2017-05-02 | Texas Instruments Incorporated | High power transistor with oxide gate barriers |
| JP6705383B2 (ja) * | 2014-11-04 | 2020-06-03 | ソニー株式会社 | 半導体装置、アンテナスイッチ回路および無線通信装置 |
| CN104576757B (zh) * | 2014-12-31 | 2017-07-18 | 深圳市华星光电技术有限公司 | 侧栅极tft开关及液晶显示装置 |
| JP6287951B2 (ja) * | 2015-05-14 | 2018-03-07 | 三菱電機株式会社 | 化合物半導体装置 |
| JP6222174B2 (ja) * | 2015-06-26 | 2017-11-01 | トヨタ自動車株式会社 | 窒化物半導体装置 |
| JP6523885B2 (ja) | 2015-09-11 | 2019-06-05 | 株式会社東芝 | 半導体装置 |
| JP6567468B2 (ja) | 2016-06-20 | 2019-08-28 | 株式会社東芝 | 半導体装置、電源回路、及び、コンピュータ |
| JP6659488B2 (ja) * | 2016-07-22 | 2020-03-04 | 株式会社東芝 | 半導体装置、電源回路、コンピュータ、及び半導体装置の製造方法 |
| CN106373991B (zh) * | 2016-11-01 | 2019-10-01 | 电子科技大学 | 一种氮面增强型氮化镓基异质结场效应管 |
| TWI613814B (zh) * | 2016-11-29 | 2018-02-01 | 新唐科技股份有限公司 | 增強型高電子遷移率電晶體元件 |
| TWI661555B (zh) * | 2017-12-28 | 2019-06-01 | Nuvoton Technology Corporation | 增強型高電子遷移率電晶體元件 |
| FR3080710B1 (fr) * | 2018-04-25 | 2021-12-24 | Commissariat Energie Atomique | Transistor hemt et procedes de fabrication favorisant une longueur et des fuites de grille reduites |
| JP2021111666A (ja) * | 2020-01-08 | 2021-08-02 | ソニーセミコンダクタソリューションズ株式会社 | 化合物半導体装置及び化合物半導体装置の製造方法 |
| US12414319B2 (en) * | 2020-07-20 | 2025-09-09 | Sony Semiconductor Solutions Corporation | Semiconductor device, semiconductor module, and wireless communication apparatus |
| CN112098790B (zh) * | 2020-08-05 | 2023-04-14 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | 基于mis-hemt的边界陷阱的能量分布测试方法及系统 |
| CN114551590B (zh) | 2020-11-26 | 2025-09-26 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
| KR102547803B1 (ko) * | 2021-05-18 | 2023-06-26 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 |
| US11881506B2 (en) | 2021-07-27 | 2024-01-23 | Globalfoundries U.S. Inc. | Gate structures with air gap isolation features |
| CN113594232B (zh) * | 2021-08-09 | 2024-12-10 | 迪优未来科技(清远)有限公司 | 一种多插指埋栅结构的增强型高压hemt器件及其制备方法 |
| US12218202B2 (en) * | 2021-09-16 | 2025-02-04 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
| CN114373804A (zh) * | 2021-12-14 | 2022-04-19 | 华为技术有限公司 | 赝配高迁移率晶体管、低噪声放大器及相关装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11150264A (ja) | 1997-09-12 | 1999-06-02 | Sony Corp | 半導体装置およびその製造方法ならびに無線通信装置 |
| US6365925B2 (en) | 1997-09-12 | 2002-04-02 | Sony Corporation | Semiconductor device |
| JP3189779B2 (ja) * | 1998-03-20 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2004273486A (ja) * | 2003-03-05 | 2004-09-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP5384029B2 (ja) | 2007-08-23 | 2014-01-08 | 日本碍子株式会社 | Ｍｉｓゲート構造型のｈｅｍｔ素子およびｍｉｓゲート構造型のｈｅｍｔ素子の作製方法 |
| JP5534661B2 (ja) * | 2008-09-11 | 2014-07-02 | 株式会社東芝 | 半導体装置 |
| JP2010186943A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 窒化物半導体装置 |
-
2012
- 2012-12-07 JP JP2012268315A patent/JP6056435B2/ja active Active
-
2013
- 2013-11-01 TW TW102139859A patent/TWI605589B/zh not_active IP Right Cessation
- 2013-11-13 CN CN201310571587.7A patent/CN103872120A/zh active Pending
- 2013-11-22 US US14/087,310 patent/US9082749B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014116401A (ja) | 2014-06-26 |
| US20140159117A1 (en) | 2014-06-12 |
| JP6056435B2 (ja) | 2017-01-11 |
| CN103872120A (zh) | 2014-06-18 |
| TW201428964A (zh) | 2014-07-16 |
| US9082749B2 (en) | 2015-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI605589B (zh) | 半導體裝置及其製造方法 | |
| EP2840593B1 (en) | Enhanced switch device and manufacturing method therefor | |
| US6777278B2 (en) | Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment | |
| US7956383B2 (en) | Field effect transistor | |
| US10529843B2 (en) | Semiconductor device | |
| CN118661266A (zh) | 具有改进的导电性的包括耗尽层的n极性器件 | |
| US9773899B2 (en) | High mobility electron transistor | |
| JP5383652B2 (ja) | 電界効果トランジスタ及びその製造方法 | |
| US8618578B2 (en) | Field effect transistor | |
| JP5900315B2 (ja) | 半導体装置および半導体装置の製造方法 | |
| US20110227132A1 (en) | Field-effect transistor | |
| US20130313561A1 (en) | Group iii-nitride transistor with charge-inducing layer | |
| US20120292665A1 (en) | High performance multigate transistor | |
| US20140252371A1 (en) | Heterojunction transistor and method of fabricating the same | |
| WO2017000906A1 (en) | Enhancement-mode double-channel high electron mobility transistor | |
| US9219136B2 (en) | Switching element | |
| US11658233B2 (en) | Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget | |
| US10985269B2 (en) | Two-dimensional electron gas (2DEG)-confined devices and methods | |
| JP2014239201A (ja) | 半導体装置、アンテナスイッチ回路、および無線通信装置 | |
| WO2016072188A1 (ja) | 半導体装置、アンテナスイッチ回路および無線通信装置 | |
| JP6369605B2 (ja) | 半導体装置、アンテナスイッチ回路、および無線通信装置 | |
| US10424659B1 (en) | High electron mobility transistor | |
| US20110169053A1 (en) | Semiconductor device | |
| CN119137746A (zh) | 具有p型层的N极性III族氮化物器件结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |