JP6054589B2 - 有機発光装置 - Google Patents
有機発光装置 Download PDFInfo
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- JP6054589B2 JP6054589B2 JP2010270085A JP2010270085A JP6054589B2 JP 6054589 B2 JP6054589 B2 JP 6054589B2 JP 2010270085 A JP2010270085 A JP 2010270085A JP 2010270085 A JP2010270085 A JP 2010270085A JP 6054589 B2 JP6054589 B2 JP 6054589B2
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- silicon
- silicon nitride
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- nitride film
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 67
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 67
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 64
- 239000010703 silicon Substances 0.000 claims description 64
- 230000004888 barrier function Effects 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 24
- 238000005401 electroluminescence Methods 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000010408 film Substances 0.000 description 110
- 239000010410 layer Substances 0.000 description 80
- 239000011521 glass Substances 0.000 description 22
- 239000002985 plastic film Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 230000035699 permeability Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229920006255 plastic film Polymers 0.000 description 10
- 239000004033 plastic Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000004627 transmission electron microscopy Methods 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- FDRNXKXKFNHNCA-UHFFFAOYSA-N 4-(4-anilinophenyl)-n-phenylaniline Chemical compound C=1C=C(C=2C=CC(NC=3C=CC=CC=3)=CC=2)C=CC=1NC1=CC=CC=C1 FDRNXKXKFNHNCA-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
シリコンリッチシリコン窒化物膜が前記範囲の屈折率値を有する場合、シリコンリッチシリコン窒化物膜の透湿率抑制能が最適の状態となる。
[実施例1:SiH4 400sccm、NH3 2000sccm、N2 10000sccm]
PECVD方法を使用して、 SiH4 400sccm、NH3 2000sccm、N2 10000sccmの条件でシリコンリッチシリコン窒化物膜を50nmの厚さにし、SiH4 150sccm、N2O 3000sccm、Ar 4000sccmの条件でシリコン酸化物膜を300nmの厚さにし、ガラス板上に、ガラス板に最も近い膜から、シリコンリッチシリコン窒化物膜、シリコン酸化物膜、シリコンリッチシリコン窒化物膜、シリコン酸化物膜、シリコンリッチシリコン窒化物膜、シリコン酸化物膜、シリコンリッチシリコン窒化物膜の順に各膜を積層することで、バリヤ層を形成した。
SiH4を500sccmの条件としたことを除いては、実施例1と同一にバリヤ層を形成させた。
SiH4を100sccmの条件としたことを除いては、実施例1と同一にバリヤ層を形成させた。
SiH4を200sccmの条件としたことを除いては、実施例1と同一にバリヤ層を形成させた。
常温で2週間放置して、実施例1、比較例1のバリヤ層の剥離有無を観察した。
[実施例3:SiH4 400sccm、NH3 2000sccm、N2 10000sccm]
PECVD方法を使用して、 SiH4 400sccm、NH3 2000sccm、N2 10000sccmの条件でシリコンリッチシリコン窒化物膜を100nmの厚さにし、ガラス板上にシリコンリッチシリコン窒化物膜を形成させた。
SiH4を500sccmの条件としたことを除いては、実施例3と同一にシリコンリッチシリコン窒化物膜を形成させた。
SiH4を100sccmの条件としたことを除いては、実施例3と同一にシリコン窒化物膜を形成させた。
[比較例4:SiH4 200sccm、NH3 2000sccm、N2 10000sccm]
SiH4を200sccmの条件としたことを除いては、実施例3と同一にシリコン窒化物膜を形成させた。
11,111 バリヤ層
12,112 接着層
13,113 プラスチックフィルム
Claims (9)
- シリコン酸化物膜とシリコンリッチシリコン窒化物膜とを有するバリヤ層と、
前記バリヤ層の両面に樹脂層が設けられることで構成される有機電界発光部の基板と、
前記樹脂層の面のうち、前記バリヤ層が設けられる面の反対側の面に設けられる有機電界発光部と、を備え、
前記シリコンリッチシリコン窒化物膜は、SiNx(ここで、xは、1.1〜1.3である)を含み、前記樹脂層に接触することを特徴とする有機発光装置。 - 前記シリコンリッチシリコン窒化物膜の屈折率は、1.81〜1.85であることを特徴とする請求項1に記載の有機発光装置。
- 前記シリコンリッチシリコン窒化物膜のストレスは、−200Mpa〜0Mpaであることを特徴とする請求項1または2に記載の有機発光装置。
- 前記バリヤ層は、複数のシリコン酸化物膜とシリコンリッチシリコン窒化物膜とが交互に配されたことを特徴とする請求項1〜3のいずれか1項に記載の有機発光装置。
- 前記シリコンリッチシリコン窒化物膜の厚さは、20nm〜80nmであることを特徴とする請求項1〜4のいずれか1項に記載の有機発光装置。
- 前記シリコン酸化物膜の厚さは、100nm〜500nmであることを特徴とする請求項1〜5のいずれか1項に記載の有機発光装置。
- 前記バリヤ層の厚さは、120nm〜2000nmであることを特徴とする請求項1〜6のいずれか1項に記載の有機発光装置。
- 前記バリヤ層は、前記樹脂層に最も近い膜から、シリコンリッチシリコン窒化物膜、シリコン酸化物膜、シリコンリッチシリコン窒化物膜、シリコン酸化物膜、シリコンリッチシリコン窒化物膜、シリコン酸化物膜、シリコンリッチシリコン窒化物膜の順で積層された複数の膜を有することを特徴とする請求項1〜7のいずれか1項に記載の有機発光装置。
- 前記シリコン酸化物膜は、シリコンリッチシリコン酸化物膜であることを特徴とする請求項1〜8のいずれか1項に記載の有機発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100012018A KR101108166B1 (ko) | 2010-02-09 | 2010-02-09 | 실리콘 산화물막과 실리콘 리치 실리콘 질화물막을 포함하는 배리어층을 포함하는 유기 발광 장치 |
KR10-2010-0012018 | 2010-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011165654A JP2011165654A (ja) | 2011-08-25 |
JP6054589B2 true JP6054589B2 (ja) | 2016-12-27 |
Family
ID=44352966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010270085A Active JP6054589B2 (ja) | 2010-02-09 | 2010-12-03 | 有機発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110193067A1 (ja) |
JP (1) | JP6054589B2 (ja) |
KR (1) | KR101108166B1 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
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US9142804B2 (en) * | 2010-02-09 | 2015-09-22 | Samsung Display Co., Ltd. | Organic light-emitting device including barrier layer and method of manufacturing the same |
KR101772661B1 (ko) * | 2010-11-29 | 2017-09-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
JP5355618B2 (ja) * | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | 可撓性表示装置及びこの製造方法 |
KR101231010B1 (ko) | 2011-09-14 | 2013-02-07 | 현대자동차주식회사 | 능동형 마운트의 구조 |
KR101903445B1 (ko) * | 2012-01-10 | 2018-10-05 | 삼성디스플레이 주식회사 | 반도체 장치 및 이의 제조 방법 |
KR101292948B1 (ko) * | 2012-03-05 | 2013-08-02 | 최도현 | 플라스틱 디스플레이 기판의 제조방법 |
US8658444B2 (en) | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
KR102026822B1 (ko) * | 2012-07-23 | 2019-10-01 | 삼성디스플레이 주식회사 | 표시 장치 셀 절단 장치 및 표시 장치 제조 방법 |
KR20140060776A (ko) * | 2012-11-12 | 2014-05-21 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
KR20140097940A (ko) * | 2013-01-30 | 2014-08-07 | 삼성디스플레이 주식회사 | 실리콘 산화물과 실리콘 질화물을 포함하는 배리어층을 구비한 tft기판, 상기 tft 기판을 포함하는 유기 발광 표시 장치 및 상기 tft 기판의 제조 방법 |
JP2014160603A (ja) | 2013-02-20 | 2014-09-04 | Japan Display Inc | シートディスプレイ |
KR102154707B1 (ko) * | 2013-04-25 | 2020-09-11 | 삼성디스플레이 주식회사 | 기상 증착 장치, 이를 이용한 증착 방법 및 유기 발광 표시 장치 제조 방법 |
KR102061794B1 (ko) * | 2013-04-30 | 2020-01-03 | 삼성디스플레이 주식회사 | 표시장치용 기판 및 이를 구비한 표시장치 |
US9178178B2 (en) | 2013-05-16 | 2015-11-03 | Samsung Display Co., Ltd. | Organic light-emitting diode display having improved adhesion and damage resistance characteristics, an electronic device including the same, and method of manufacturing the organic light-emitting diode display |
KR102104608B1 (ko) * | 2013-05-16 | 2020-04-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이를 포함하는 전자 기기, 및 유기 발광 표시 장치의 제조 방법 |
CN104377165B (zh) * | 2013-08-12 | 2017-11-17 | 上海和辉光电有限公司 | 平板显示器及其柔性基板和制作方法 |
JP6253070B2 (ja) * | 2013-09-30 | 2017-12-27 | エルジー・ケム・リミテッド | 有機電子素子用基板およびこの製造方法 |
KR102180037B1 (ko) * | 2013-11-06 | 2020-11-18 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 그 제조 방법 |
JP6294670B2 (ja) * | 2014-01-07 | 2018-03-14 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
US10147906B2 (en) * | 2014-02-06 | 2018-12-04 | Emagin Corporation | High efficacy seal for organic light emitting diode displays |
US9373817B2 (en) | 2014-07-11 | 2016-06-21 | Industrial Technology Research Institute | Substrate structure and device employing the same |
KR102352290B1 (ko) * | 2014-09-03 | 2022-01-18 | 삼성디스플레이 주식회사 | 플렉서블 표시패널 |
TWI552321B (zh) | 2014-09-30 | 2016-10-01 | 群創光電股份有限公司 | 顯示面板及顯示裝置 |
KR102313361B1 (ko) * | 2014-11-17 | 2021-10-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이를 포함하는 전자 기기, 및 유기 발광 표시 장치의 제조 방법 |
KR102325514B1 (ko) | 2015-02-26 | 2021-11-15 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
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KR102516054B1 (ko) * | 2015-11-13 | 2023-03-31 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 유기발광표시장치의 제조 방법 |
KR101994836B1 (ko) * | 2016-02-01 | 2019-07-02 | 삼성디스플레이 주식회사 | 실리콘 산화물과 실리콘 질화물을 포함하는 배리어층을 구비한 tft 기판, 상기 tft 기판을 포함하는 유기 발광 표시 장치 및 상기 tft 기판의 제조 방법 |
JP2017212038A (ja) * | 2016-05-23 | 2017-11-30 | 株式会社ジャパンディスプレイ | 表示装置 |
CN107644937B (zh) * | 2016-07-22 | 2021-06-15 | 元太科技工业股份有限公司 | 电子组件封装体 |
JP6446507B2 (ja) * | 2017-06-16 | 2018-12-26 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
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KR102270084B1 (ko) * | 2020-04-20 | 2021-06-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이를 포함하는 전자 기기, 및 유기 발광 표시 장치의 제조 방법 |
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JP2009032464A (ja) * | 2007-07-25 | 2009-02-12 | Japan Gore Tex Inc | 有機エレクトロルミネッセンス素子およびディスプレイ装置 |
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JP5345456B2 (ja) * | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
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- 2010-02-09 KR KR1020100012018A patent/KR101108166B1/ko active IP Right Grant
- 2010-09-30 US US12/895,315 patent/US20110193067A1/en not_active Abandoned
- 2010-12-03 JP JP2010270085A patent/JP6054589B2/ja active Active
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KR20110092542A (ko) | 2011-08-18 |
US20110193067A1 (en) | 2011-08-11 |
JP2011165654A (ja) | 2011-08-25 |
KR101108166B1 (ko) | 2012-01-31 |
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