JP6041816B2 - 透明基板における透明電極が見えないようにする処理方法 - Google Patents
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Description
(102)フィルム(film)メッキは、透明ガラス(glass)基板の側表面に酸化インジュムスズの薄膜をめっきする。
(104)プリーベーキング(pre-baking)は、ゆっくり透明ガラス基板を加熱し、透明ガラス基板の塗布した光抵抗層の型を定めて、後の処理の利便性を考える。
(106)現像は、現像液で露出エリア(area)を洗って、露出エリア(area)の光抵抗層を洗浄する。そうすると、酸化インジュムスズの薄膜が露出される。
(108)剥げ(Stripping)は、アルカリ(alkali)性の溶液(通常、KOHを採用、即ち、水酸化カリウム)で遮蔽図形エリア(area)を洗って、遮蔽図形エリア(area)における光抵抗層をアルカリ(alkali)性の溶液に溶解する。その結果、透明ガラス基板に必要なITO透明電極が形成される。
まずは、図3を参照する。本発明の一実施例による透明基板における透明電極が見えないようにするという処理方法は、主に、透明な基板2に複数本の透明電極20を配置したあとで、非導電のナノメートル(nano-meter)材料の粒子から形成した溶液を透明な基板2及び透明電極20に塗布する。非導電のナノメートル(nano-meter)材料粒子は、透明電極20と同じ屈折レート(rate)がある。のちに、透明な基板2に高温の熱処理を行う。ある時間の熱処理をしたあとで、透明な基板2及び透明電極20に整然平坦かつ均一な遮蔽層21が形成される。そうすると、遮蔽層21を経由して透明な基板2で透明電極20をレイアウト(layout)しなかった部位と透明電極20をレイアウト(layout)した部位とは光の同じ屈折レート(rate)があるので、透明な基板2の各部位が光に対して異なる屈折レート(rate)を持つことから招かれる画面影像の品質低降などの問題を有効的に避ける。
(401)透明電極20と同じ屈折レート(rate)を持つ非導電ナノメートル(nano-meter)材料粒子を均一に透明な基板2及び透明電極20に塗布する。
(402)透明な基板2に高温の熱処理を行う。ある時間の熱処理をしたあとで、透明な基板2及び透明電極20に整然平坦かつ均一な遮蔽層21が形成される。
(501)非導電ナノメートル(nano-meter)材料粒子を溶剤の中に添加する。
(503)超音波で溶剤の処理を行って、非導電ナノメートル(nano-meter)材料粒子を均一に溶剤の中に分散し、溶液を形成する。そして、非導電ナノメートル(nano-meter)材料粒子を均一に透明な基板2及び透明電極20に塗布することができる。
(601)酸素と炭化水素の金属化合物を溶剤に添加し、溶剤を攪拌する。
(602)ゲル(gel)の反応触媒を溶剤に添加する。
(603)溶剤に摂氏50度から摂氏80度の低温熱処理を行う。ソルゲル(sol-gel)反応の必要な反応時間を経て、酸素と炭化水素の金属化合物を持つナノメートル(nano-meter)粒子の均一な溶液が形成される。
Claims (3)
- 複数本の透明電極をレイアウトした透明基板(但し、タッチパネルを除く。)に応用され、前記透明基板における前記透明電極が見えないようにする処理方法であって、
前記透明電極と等しい屈折レートを有する非導電ナノメートル材料粒子を溶剤の中に添加し、
前記非導電ナノメートル材料粒子を添加した後に、分散剤を前記溶剤に添加し、
前記分散剤を添加した後に、接着剤を前記溶剤に添加し、
前記非導電ナノメートル材料粒子、前記分散剤及び前記接着剤を添加した前記溶剤について超音波で処理を行って、前記非導電ナノメートル材料粒子を均一に前記溶剤の中に分散した溶液を形成し、
前記溶液を、前記透明基板及び前記透明電極上に塗布し、
前記透明基板に高温の熱処理を行い、前記透明基板及び前記透明電極上に平坦かつ均一な遮蔽層を形成し、
前記透明電極、前記非導電ナノメートル材料粒子及び前記遮蔽層の光に対する屈折レートは、1.8より大きく2.2以下であることを特徴とする処理方法。 - 複数本の透明電極をレイアウトした透明基板に応用され、前記透明基板における前記透明電極が見えないようにする処理方法であって、
前記透明電極と等しい屈折レートを有する非導電ナノメートル材料粒子の溶液を、前記透明基板及び前記透明電極上に塗布し、
前記透明基板に高温の熱処理を行い、前記透明基板及び前記透明電極上に平坦かつ均一な遮蔽層を形成し、
前記透明電極、前記非導電ナノメートル材料粒子及び前記遮蔽層の光に対する屈折レートは、1.8より大きく2.2以下であり、
前記非導電ナノメートル材料粒子は、酸化アンチモン(Sb2O3)、酸化インジウム(In2O3)、酸化タンタル(Ta2O3)、酸化ジルコニウム(ZrO2)の材料又は酸化アンチモン(Sb2O3)、酸化クロム(Cr2O3)、酸化インジウム(In2O3)、酸化タンタル(Ta2O3)、酸化チタン(TiO2)及び酸化ジルコニウム(ZrO2)の混合物であることを特徴とする処理方法。 - 複数本の透明電極をレイアウトした透明基板(但し、タッチパネルを除く。)に応用され、前記透明基板における前記透明電極が見えないようにする処理方法であって、
前記透明電極と等しい屈折レートを有し、酸素と炭化水素の金属化合物からなる非導電ナノメートル材料粒子を溶剤の中に添加して、前記溶剤を攪拌し、
ゲルの反応触媒を前記溶剤に添加し、
前記溶剤に低温熱処理を行い、前記非導電ナノメートル材料粒子の均一な溶液を形成し、
前記溶液を、前記透明基板及び前記透明電極上に塗布し、
前記透明基板に高温の熱処理を行い、前記透明基板及び前記透明電極上に平坦かつ均一な遮蔽層を形成し、
前記透明電極、前記非導電ナノメートル材料粒子及び前記遮蔽層の光に対する屈折レートは、1.8より大きく2.2以下であることを特徴とする処理方法。
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