JP6036155B2 - ＧａＮ結晶 - Google Patents

ＧａＮ結晶 Download PDF

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Publication number
JP6036155B2
JP6036155B2 JP2012231353A JP2012231353A JP6036155B2 JP 6036155 B2 JP6036155 B2 JP 6036155B2 JP 2012231353 A JP2012231353 A JP 2012231353A JP 2012231353 A JP2012231353 A JP 2012231353A JP 6036155 B2 JP6036155 B2 JP 6036155B2
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growth
crystal
concentration
periodic table
plane
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Expired - Fee Related
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JP2012231353A
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Japanese (ja)
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JP2013100220A5 (enExample
JP2013100220A (ja
Inventor
雄也 齋藤
雄也 齋藤
純貴 伊藤
純貴 伊藤
寺田　秀
秀 寺田
博充 木村
博充 木村
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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  • Crystals, And After-Treatments Of Crystals (AREA)
JP2012231353A 2011-10-21 2012-10-19 ＧａＮ結晶 Expired - Fee Related JP6036155B2 (ja)

Priority Applications (1)

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JP2012231353A JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶

Applications Claiming Priority (3)

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JP2011232166 2011-10-21
JP2011232166 2011-10-21
JP2012231353A JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶

Related Child Applications (1)

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JP2016204109A Division JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

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JP2013100220A JP2013100220A (ja) 2013-05-23
JP2013100220A5 JP2013100220A5 (enExample) 2015-11-19
JP6036155B2 true JP6036155B2 (ja) 2016-11-30

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JP2016204109A Active JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6832668B2 (ja) * 2016-10-07 2021-02-24 古河機械金属株式会社 自立基板、及び、自立基板の製造方法
KR102228758B1 (ko) 2017-03-17 2021-03-18 아사히 가세이 가부시키가이샤 열경화성 수지 조성물
JP6455575B2 (ja) * 2017-09-12 2019-01-23 三菱ケミカル株式会社 第１３族金属窒化物基板の製造方法
FR3102776B1 (fr) * 2019-11-05 2025-04-11 Saint Gobain Lumilog Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009126723A (ja) * 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体結晶の成長方法、ｉｉｉ族窒化物半導体結晶基板の製造方法およびｉｉｉ族窒化物半導体結晶基板
JP2011523931A (ja) * 2008-05-28 2011-08-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 低濃度アルカリ金属保有の六方晶系ウルツ鉱型エピタキシャル層およびその生成方法
EP2439317A1 (en) * 2009-06-04 2012-04-11 Mitsubishi Chemical Corporation Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table
JP5447289B2 (ja) * 2009-08-19 2014-03-19 三菱化学株式会社 窒化物半導体結晶およびその製造方法

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JP6217825B2 (ja) 2017-10-25
JP2017052691A (ja) 2017-03-16
JP2013100220A (ja) 2013-05-23

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