JP2013100220A5 - - Google Patents
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- JP2013100220A5 JP2013100220A5 JP2012231353A JP2012231353A JP2013100220A5 JP 2013100220 A5 JP2013100220 A5 JP 2013100220A5 JP 2012231353 A JP2012231353 A JP 2012231353A JP 2012231353 A JP2012231353 A JP 2012231353A JP 2013100220 A5 JP2013100220 A5 JP 2013100220A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012231353A JP6036155B2 (ja) | 2011-10-21 | 2012-10-19 | GaN結晶 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011232166 | 2011-10-21 | ||
| JP2011232166 | 2011-10-21 | ||
| JP2012231353A JP6036155B2 (ja) | 2011-10-21 | 2012-10-19 | GaN結晶 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016204109A Division JP6217825B2 (ja) | 2011-10-21 | 2016-10-18 | GaN結晶 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013100220A JP2013100220A (ja) | 2013-05-23 |
| JP2013100220A5 true JP2013100220A5 (enExample) | 2015-11-19 |
| JP6036155B2 JP6036155B2 (ja) | 2016-11-30 |
Family
ID=48621275
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012231353A Active JP6036155B2 (ja) | 2011-10-21 | 2012-10-19 | GaN結晶 |
| JP2016204109A Active JP6217825B2 (ja) | 2011-10-21 | 2016-10-18 | GaN結晶 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016204109A Active JP6217825B2 (ja) | 2011-10-21 | 2016-10-18 | GaN結晶 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP6036155B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6832668B2 (ja) * | 2016-10-07 | 2021-02-24 | 古河機械金属株式会社 | 自立基板、及び、自立基板の製造方法 |
| CN110325565B (zh) | 2017-03-17 | 2022-03-22 | 旭化成株式会社 | 热固性树脂组合物 |
| JP6455575B2 (ja) * | 2017-09-12 | 2019-01-23 | 三菱ケミカル株式会社 | 第13族金属窒化物基板の製造方法 |
| FR3102776B1 (fr) * | 2019-11-05 | 2025-04-11 | Saint Gobain Lumilog | Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009126723A (ja) * | 2007-11-20 | 2009-06-11 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体結晶の成長方法、iii族窒化物半導体結晶基板の製造方法およびiii族窒化物半導体結晶基板 |
| WO2009146382A1 (en) * | 2008-05-28 | 2009-12-03 | The Regents Of The University Of California | Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same |
| EP2439317A1 (en) * | 2009-06-04 | 2012-04-11 | Mitsubishi Chemical Corporation | Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table |
| JP5447289B2 (ja) * | 2009-08-19 | 2014-03-19 | 三菱化学株式会社 | 窒化物半導体結晶およびその製造方法 |
-
2012
- 2012-10-19 JP JP2012231353A patent/JP6036155B2/ja active Active
-
2016
- 2016-10-18 JP JP2016204109A patent/JP6217825B2/ja active Active
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