JP6035736B2 - 発光素子およびその製造方法、並びに発光装置 - Google Patents

発光素子およびその製造方法、並びに発光装置 Download PDF

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Publication number
JP6035736B2
JP6035736B2 JP2011283570A JP2011283570A JP6035736B2 JP 6035736 B2 JP6035736 B2 JP 6035736B2 JP 2011283570 A JP2011283570 A JP 2011283570A JP 2011283570 A JP2011283570 A JP 2011283570A JP 6035736 B2 JP6035736 B2 JP 6035736B2
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Japan
Prior art keywords
active layer
light emitting
emitting element
light
crystallized film
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JP2011283570A
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Japanese (ja)
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JP2013110374A5 (enExample
JP2013110374A (ja
Inventor
弥樹博 横関
弥樹博 横関
青柳　秀和
秀和 青柳
治典 塩見
治典 塩見
孝彦 河崎
孝彦 河崎
勝利 伊藤
勝利 伊藤
享宏 小山
享宏 小山
成井　啓修
啓修 成井
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Sony Corp
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Sony Corp
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Priority to JP2011283570A priority Critical patent/JP6035736B2/ja
Priority to CN201210397869.5A priority patent/CN103078038B/zh
Priority to US13/655,881 priority patent/US9455373B2/en
Publication of JP2013110374A publication Critical patent/JP2013110374A/ja
Publication of JP2013110374A5 publication Critical patent/JP2013110374A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
JP2011283570A 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置 Expired - Fee Related JP6035736B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011283570A JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置
CN201210397869.5A CN103078038B (zh) 2011-10-26 2012-10-18 发光元件、制造发光元件的方法以及发光装置
US13/655,881 US9455373B2 (en) 2011-10-26 2012-10-19 Light emitting element, method of manufacturing the same, and light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011234637 2011-10-26
JP2011234637 2011-10-26
JP2011283570A JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置

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JP2013110374A JP2013110374A (ja) 2013-06-06
JP2013110374A5 JP2013110374A5 (enExample) 2014-12-25
JP6035736B2 true JP6035736B2 (ja) 2016-11-30

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JP2011283570A Expired - Fee Related JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置

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US (1) US9455373B2 (enExample)
JP (1) JP6035736B2 (enExample)
CN (1) CN103078038B (enExample)

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JP2014187325A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体発光装置及びその製造方法
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9105813B1 (en) * 2014-05-30 2015-08-11 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
CN104064654B (zh) * 2014-06-18 2017-07-11 工业和信息化部电子第五研究所 形成芯片的钝化膜的方法、芯片的钝化膜的结构及芯片
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9793436B2 (en) 2015-01-16 2017-10-17 Epistar Corporation Semiconductor light-emitting device
JP6652069B2 (ja) 2015-02-03 2020-02-19 ソニー株式会社 発光ダイオード
JP2016143825A (ja) * 2015-02-04 2016-08-08 晶元光電股▲ふん▼有限公司 半導体発光部品
DE102015120089A1 (de) 2015-11-19 2017-05-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
CN108369974B (zh) 2015-12-22 2021-05-18 苹果公司 用于减轻非辐射复合的led侧壁处理
CN115566122A (zh) * 2016-06-30 2023-01-03 苹果公司 用于减少的非辐射侧壁复合的led结构
KR102568353B1 (ko) * 2018-08-16 2023-08-18 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
WO2020096859A1 (en) * 2018-11-06 2020-05-14 The Regents Of The University Of California Micro-leds with ultra-low leakage current
US11677042B2 (en) * 2019-03-29 2023-06-13 Meta Platforms Technologies, Llc Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
GB2584150B (en) * 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
DE102019117207A1 (de) * 2019-06-26 2020-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips
JP2020010056A (ja) * 2019-09-11 2020-01-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 半導体発光部品
DE102020106113A1 (de) * 2020-03-06 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
CN111446335B (zh) * 2020-03-24 2021-12-14 京东方科技集团股份有限公司 一种发光二极管及其制备方法
KR20210147158A (ko) * 2020-05-27 2021-12-07 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법, 발광 소자를 포함한 잉크 조성물 및 장치
KR20210156624A (ko) * 2020-06-18 2021-12-27 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
KR102870852B1 (ko) 2020-06-24 2025-10-13 삼성전자주식회사 반도체 발광 소자
EP3950045B1 (en) * 2020-08-04 2025-01-01 Heraeus Medevio GmbH & Co. KG Ring electrode for a medical device
KR102841608B1 (ko) * 2020-08-13 2025-08-01 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
CN114744092B (zh) * 2021-01-08 2025-04-18 鑫天虹(厦门)科技有限公司 减少非辐射复合的微发光二极体的制作方法及制作机台
KR20230013705A (ko) 2021-07-19 2023-01-27 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20230043296A (ko) * 2021-09-23 2023-03-31 삼성디스플레이 주식회사 표시 장치 및 발광 소자의 제조 방법
EP4539640A3 (en) * 2022-01-31 2025-06-18 Jade Bird Display (Shanghai) Limited Micro led, micro led array panel and manufacuturing method thereof

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JPH02250380A (ja) * 1989-03-23 1990-10-08 Nec Corp 半導体発光ダイオード
JP2655943B2 (ja) * 1991-02-28 1997-09-24 シャープ株式会社 半導体発光素子及びその製造方法
JP3150011B2 (ja) * 1993-07-20 2001-03-26 シャープ株式会社 半導体発光素子およびその製造方法
JPH11168259A (ja) 1997-12-05 1999-06-22 Sony Corp 半導体装置及びその製造方法
JP3797798B2 (ja) 1997-12-11 2006-07-19 三菱化学株式会社 半導体発光素子の製造方法
JP2004288729A (ja) * 2003-03-19 2004-10-14 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
US20050187984A1 (en) * 2004-02-20 2005-08-25 Tianlong Chen Data driven database management system and method
JP4725128B2 (ja) * 2005-02-18 2011-07-13 ソニー株式会社 半導体発光素子およびその製造方法、並びに光学モジュール
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
US9455373B2 (en) 2016-09-27
CN103078038A (zh) 2013-05-01
US20130105836A1 (en) 2013-05-02
JP2013110374A (ja) 2013-06-06
CN103078038B (zh) 2017-08-11

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