JP2013110374A5 - - Google Patents

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Publication number
JP2013110374A5
JP2013110374A5 JP2011283570A JP2011283570A JP2013110374A5 JP 2013110374 A5 JP2013110374 A5 JP 2013110374A5 JP 2011283570 A JP2011283570 A JP 2011283570A JP 2011283570 A JP2011283570 A JP 2011283570A JP 2013110374 A5 JP2013110374 A5 JP 2013110374A5
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JP
Japan
Prior art keywords
active layer
light
light emitting
semiconductor layer
emitting element
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JP2011283570A
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English (en)
Japanese (ja)
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JP6035736B2 (ja
JP2013110374A (ja
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Priority to JP2011283570A priority Critical patent/JP6035736B2/ja
Priority claimed from JP2011283570A external-priority patent/JP6035736B2/ja
Priority to CN201210397869.5A priority patent/CN103078038B/zh
Priority to US13/655,881 priority patent/US9455373B2/en
Publication of JP2013110374A publication Critical patent/JP2013110374A/ja
Publication of JP2013110374A5 publication Critical patent/JP2013110374A5/ja
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Publication of JP6035736B2 publication Critical patent/JP6035736B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011283570A 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置 Expired - Fee Related JP6035736B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011283570A JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置
CN201210397869.5A CN103078038B (zh) 2011-10-26 2012-10-18 发光元件、制造发光元件的方法以及发光装置
US13/655,881 US9455373B2 (en) 2011-10-26 2012-10-19 Light emitting element, method of manufacturing the same, and light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011234637 2011-10-26
JP2011234637 2011-10-26
JP2011283570A JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置

Publications (3)

Publication Number Publication Date
JP2013110374A JP2013110374A (ja) 2013-06-06
JP2013110374A5 true JP2013110374A5 (enExample) 2014-12-25
JP6035736B2 JP6035736B2 (ja) 2016-11-30

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JP2011283570A Expired - Fee Related JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置

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US (1) US9455373B2 (enExample)
JP (1) JP6035736B2 (enExample)
CN (1) CN103078038B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014187325A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体発光装置及びその製造方法
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9105813B1 (en) * 2014-05-30 2015-08-11 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
CN104064654B (zh) * 2014-06-18 2017-07-11 工业和信息化部电子第五研究所 形成芯片的钝化膜的方法、芯片的钝化膜的结构及芯片
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9793436B2 (en) 2015-01-16 2017-10-17 Epistar Corporation Semiconductor light-emitting device
JP6652069B2 (ja) 2015-02-03 2020-02-19 ソニー株式会社 発光ダイオード
JP2016143825A (ja) * 2015-02-04 2016-08-08 晶元光電股▲ふん▼有限公司 半導体発光部品
DE102015120089A1 (de) 2015-11-19 2017-05-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
CN108369974B (zh) 2015-12-22 2021-05-18 苹果公司 用于减轻非辐射复合的led侧壁处理
CN115566122A (zh) * 2016-06-30 2023-01-03 苹果公司 用于减少的非辐射侧壁复合的led结构
KR102568353B1 (ko) * 2018-08-16 2023-08-18 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
WO2020096859A1 (en) * 2018-11-06 2020-05-14 The Regents Of The University Of California Micro-leds with ultra-low leakage current
US11677042B2 (en) * 2019-03-29 2023-06-13 Meta Platforms Technologies, Llc Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
GB2584150B (en) * 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
DE102019117207A1 (de) * 2019-06-26 2020-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips
JP2020010056A (ja) * 2019-09-11 2020-01-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 半導体発光部品
DE102020106113A1 (de) * 2020-03-06 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
CN111446335B (zh) * 2020-03-24 2021-12-14 京东方科技集团股份有限公司 一种发光二极管及其制备方法
KR20210147158A (ko) * 2020-05-27 2021-12-07 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법, 발광 소자를 포함한 잉크 조성물 및 장치
KR20210156624A (ko) * 2020-06-18 2021-12-27 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
KR102870852B1 (ko) 2020-06-24 2025-10-13 삼성전자주식회사 반도체 발광 소자
EP3950045B1 (en) * 2020-08-04 2025-01-01 Heraeus Medevio GmbH & Co. KG Ring electrode for a medical device
KR102841608B1 (ko) * 2020-08-13 2025-08-01 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
CN114744092B (zh) * 2021-01-08 2025-04-18 鑫天虹(厦门)科技有限公司 减少非辐射复合的微发光二极体的制作方法及制作机台
KR20230013705A (ko) 2021-07-19 2023-01-27 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20230043296A (ko) * 2021-09-23 2023-03-31 삼성디스플레이 주식회사 표시 장치 및 발광 소자의 제조 방법
EP4539640A3 (en) * 2022-01-31 2025-06-18 Jade Bird Display (Shanghai) Limited Micro led, micro led array panel and manufacuturing method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02250380A (ja) * 1989-03-23 1990-10-08 Nec Corp 半導体発光ダイオード
JP2655943B2 (ja) * 1991-02-28 1997-09-24 シャープ株式会社 半導体発光素子及びその製造方法
JP3150011B2 (ja) * 1993-07-20 2001-03-26 シャープ株式会社 半導体発光素子およびその製造方法
JPH11168259A (ja) 1997-12-05 1999-06-22 Sony Corp 半導体装置及びその製造方法
JP3797798B2 (ja) 1997-12-11 2006-07-19 三菱化学株式会社 半導体発光素子の製造方法
JP2004288729A (ja) * 2003-03-19 2004-10-14 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
US20050187984A1 (en) * 2004-02-20 2005-08-25 Tianlong Chen Data driven database management system and method
JP4725128B2 (ja) * 2005-02-18 2011-07-13 ソニー株式会社 半導体発光素子およびその製造方法、並びに光学モジュール
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

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