JP6028298B2 - 半導体ダイ上にフィーチャをめっきするためのヒューズバス - Google Patents

半導体ダイ上にフィーチャをめっきするためのヒューズバス Download PDF

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Publication number
JP6028298B2
JP6028298B2 JP2012159145A JP2012159145A JP6028298B2 JP 6028298 B2 JP6028298 B2 JP 6028298B2 JP 2012159145 A JP2012159145 A JP 2012159145A JP 2012159145 A JP2012159145 A JP 2012159145A JP 6028298 B2 JP6028298 B2 JP 6028298B2
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Japan
Prior art keywords
interconnect
seal ring
fuse
forming
pads
Prior art date
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Expired - Fee Related
Application number
JP2012159145A
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English (en)
Japanese (ja)
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JP2013026624A5 (https=
JP2013026624A (ja
Inventor
アール．リール ジョージ
アール．リール ジョージ
ジェイ．ヘス ケビン
ジェイ．ヘス ケビン
エス．ユーリン トレント
エス．ユーリン トレント
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
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Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01904—Manufacture or treatment of bond pads using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012159145A 2011-07-22 2012-07-18 半導体ダイ上にフィーチャをめっきするためのヒューズバス Expired - Fee Related JP6028298B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/189,054 US8349666B1 (en) 2011-07-22 2011-07-22 Fused buss for plating features on a semiconductor die
US13/189,054 2011-07-22

Publications (3)

Publication Number Publication Date
JP2013026624A JP2013026624A (ja) 2013-02-04
JP2013026624A5 JP2013026624A5 (https=) 2015-09-03
JP6028298B2 true JP6028298B2 (ja) 2016-11-16

Family

ID=46507887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012159145A Expired - Fee Related JP6028298B2 (ja) 2011-07-22 2012-07-18 半導体ダイ上にフィーチャをめっきするためのヒューズバス

Country Status (4)

Country Link
US (1) US8349666B1 (https=)
EP (1) EP2549532B1 (https=)
JP (1) JP6028298B2 (https=)
TW (1) TWI538152B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519513B2 (en) * 2012-01-04 2013-08-27 Freescale Semiconductor, Inc. Semiconductor wafer plating bus
JP5968711B2 (ja) * 2012-07-25 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
ITMI20121599A1 (it) * 2012-09-25 2014-03-26 St Microelectronics Srl Dispositivo elettronico comprendente un transistore vtmos ed un diodo termico integrati
US8994148B2 (en) * 2013-02-19 2015-03-31 Infineon Technologies Ag Device bond pads over process control monitor structures in a semiconductor die
US10424521B2 (en) 2014-05-13 2019-09-24 Nxp Usa, Inc. Programmable stitch chaining of die-level interconnects for reliability testing
US20150371956A1 (en) * 2014-06-19 2015-12-24 Globalfoundries Inc. Crackstops for bulk semiconductor wafers
JP6435562B2 (ja) * 2014-12-02 2018-12-12 ローム株式会社 半導体装置および半導体装置の製造方法
US20180337228A1 (en) * 2017-05-18 2018-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Novel seal ring for iii-v compound semiconductor-based devices
FR3079342B1 (fr) * 2018-03-21 2020-04-17 Stmicroelectronics (Rousset) Sas Dispositif fusible integre
CN109461717A (zh) * 2018-10-15 2019-03-12 上海华虹宏力半导体制造有限公司 一种晶圆及其形成方法、等离子体裂片方法
US10978404B2 (en) * 2019-08-22 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for fabricating semiconductor structure
CN115249667A (zh) * 2021-04-27 2022-10-28 三星电子株式会社 半导体装置
KR20220150158A (ko) * 2021-05-03 2022-11-10 에스케이하이닉스 주식회사 크랙 전파 가이드를 포함한 반도체 칩을 제조하는 방법
CN113410209B (zh) * 2021-06-09 2023-07-18 合肥中感微电子有限公司 一种修调电路
JP2023043036A (ja) * 2021-09-15 2023-03-28 キオクシア株式会社 半導体装置
US20240421077A1 (en) * 2023-06-15 2024-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Die stitching for stacking architecture in semiconductor packages

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
JPS62108543A (ja) * 1985-11-06 1987-05-19 Hitachi Ltd 半導体装置の電極形成法
US5384727A (en) * 1993-11-08 1995-01-24 Advanced Micro Devices, Inc. Fuse trimming in plastic package devices
US6222212B1 (en) 1994-01-27 2001-04-24 Integrated Device Technology, Inc. Semiconductor device having programmable interconnect layers
US5813881A (en) 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
JP3119352B2 (ja) * 1998-04-15 2000-12-18 日本電気株式会社 半導体装置のメッキ構造体形成方法
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US6911360B2 (en) 2003-04-29 2005-06-28 Freescale Semiconductor, Inc. Fuse and method for forming
JP2006013229A (ja) * 2004-06-28 2006-01-12 Toshiba Corp 半導体装置及びその製造方法
JP4779324B2 (ja) * 2004-09-01 2011-09-28 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
US7777338B2 (en) * 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
US7232711B2 (en) * 2005-05-24 2007-06-19 International Business Machines Corporation Method and structure to prevent circuit network charging during fabrication of integrated circuits
US8242576B2 (en) * 2005-07-21 2012-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Protection layer for preventing laser damage on semiconductor devices
US7575958B2 (en) 2005-10-11 2009-08-18 Freescale Semiconductor, Inc. Programmable fuse with silicon germanium
US7413980B2 (en) * 2006-04-25 2008-08-19 Texas Instruments Incorporated Semiconductor device with improved contact fuse
JP2008016707A (ja) * 2006-07-07 2008-01-24 Matsushita Electric Ind Co Ltd 半導体装置及びその検査方法
US7586175B2 (en) * 2006-10-23 2009-09-08 Samsung Electronics Co., Ltd. Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface
US7948060B2 (en) * 2008-07-01 2011-05-24 Xmos Limited Integrated circuit structure
US8373254B2 (en) * 2008-07-29 2013-02-12 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for reducing integrated circuit corner peeling
JP2010153753A (ja) * 2008-12-26 2010-07-08 Renesas Electronics Corp 半導体装置
US8865592B2 (en) * 2009-02-03 2014-10-21 Infineon Technologies Ag Silicided semiconductor structure and method of forming the same

Also Published As

Publication number Publication date
JP2013026624A (ja) 2013-02-04
EP2549532B1 (en) 2020-06-03
TWI538152B (zh) 2016-06-11
EP2549532A2 (en) 2013-01-23
US20130023091A1 (en) 2013-01-24
US8349666B1 (en) 2013-01-08
EP2549532A3 (en) 2016-12-28
TW201320290A (zh) 2013-05-16

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