JP6023461B2 - 発光素子、発光装置 - Google Patents

発光素子、発光装置 Download PDF

Info

Publication number
JP6023461B2
JP6023461B2 JP2012105579A JP2012105579A JP6023461B2 JP 6023461 B2 JP6023461 B2 JP 6023461B2 JP 2012105579 A JP2012105579 A JP 2012105579A JP 2012105579 A JP2012105579 A JP 2012105579A JP 6023461 B2 JP6023461 B2 JP 6023461B2
Authority
JP
Japan
Prior art keywords
layer
light
emitting element
abbreviation
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012105579A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013012467A (ja
JP2013012467A5 (enExample
Inventor
広美 瀬尾
広美 瀬尾
瀬尾　哲史
哲史 瀬尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012105579A priority Critical patent/JP6023461B2/ja
Publication of JP2013012467A publication Critical patent/JP2013012467A/ja
Publication of JP2013012467A5 publication Critical patent/JP2013012467A5/ja
Application granted granted Critical
Publication of JP6023461B2 publication Critical patent/JP6023461B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012105579A 2011-05-13 2012-05-07 発光素子、発光装置 Active JP6023461B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012105579A JP6023461B2 (ja) 2011-05-13 2012-05-07 発光素子、発光装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011108559 2011-05-13
JP2011108559 2011-05-13
JP2011123451 2011-06-01
JP2011123451 2011-06-01
JP2012105579A JP6023461B2 (ja) 2011-05-13 2012-05-07 発光素子、発光装置

Publications (3)

Publication Number Publication Date
JP2013012467A JP2013012467A (ja) 2013-01-17
JP2013012467A5 JP2013012467A5 (enExample) 2015-05-28
JP6023461B2 true JP6023461B2 (ja) 2016-11-09

Family

ID=47141287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012105579A Active JP6023461B2 (ja) 2011-05-13 2012-05-07 発光素子、発光装置

Country Status (4)

Country Link
US (1) US9647228B2 (enExample)
JP (1) JP6023461B2 (enExample)
KR (1) KR101933951B1 (enExample)
TW (1) TWI602334B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI513077B (zh) * 2013-12-11 2015-12-11 Ultimate Image Corp 有機發光二極體照明裝置
KR102377366B1 (ko) * 2014-12-12 2022-03-21 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102399414B1 (ko) * 2014-12-30 2022-05-18 엘지디스플레이 주식회사 다층의 스택 구조를 갖는 유기발광 다이오드 표시장치
KR102623039B1 (ko) 2015-05-15 2024-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기 및 조명 장치
CN107056806A (zh) * 2016-04-25 2017-08-18 中节能万润股份有限公司 一种含有均苯骨架结构的化合物及其在有机电致发光器件中的应用
KR20240123845A (ko) * 2017-04-07 2024-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
WO2019216575A1 (ko) * 2018-05-08 2019-11-14 서울대학교산학협력단 축합환 화합물 및 이를 포함하는 유기 발광 소자
CN112970130B (zh) * 2018-10-30 2024-02-09 夏普株式会社 发光元件、发光元件的制造方法
KR20220002356A (ko) * 2019-04-26 2022-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치
KR20220002369A (ko) 2019-04-26 2022-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치
WO2021029006A1 (ja) * 2019-08-13 2021-02-18 シャープ株式会社 発光素子及び発光装置
US12274114B2 (en) * 2019-09-06 2025-04-08 Sharp Kabushiki Kaisha Display device including metal oxide nanoparticles for uniform and efficient lighting and method for producing same
KR102806843B1 (ko) * 2020-07-01 2025-05-12 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
CN111697150A (zh) * 2020-08-11 2020-09-22 河南大学 一种基于MoOx空穴注入层的QLED器件及其制备方法
US12389744B2 (en) * 2021-10-28 2025-08-12 Samsung Electronics Co., Ltd. Electroluminescent device, production method thereof, and display device including the same
CN115915827A (zh) * 2022-10-08 2023-04-04 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2697120B2 (ja) 1989-04-28 1998-01-14 日本電気株式会社 薄膜発光素子およびその製造方法
JP2926845B2 (ja) 1990-03-23 1999-07-28 日本電気株式会社 有機薄膜ｅｌ素子
JP2824411B2 (ja) 1995-08-25 1998-11-11 株式会社豊田中央研究所 有機薄膜発光素子
JPH10270171A (ja) 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
US5989737A (en) 1997-02-27 1999-11-23 Xerox Corporation Organic electroluminescent devices
JPH11251067A (ja) 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JPH11307264A (ja) 1998-04-17 1999-11-05 Matsushita Electric Ind Co Ltd 有機電界発光素子
JPH11307259A (ja) 1998-04-23 1999-11-05 Tdk Corp 有機ｅｌ素子
CN1941453A (zh) 1998-06-26 2007-04-04 出光兴产株式会社 发光器件
US6172459B1 (en) 1998-07-28 2001-01-09 Eastman Kodak Company Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer
US6361886B2 (en) 1998-12-09 2002-03-26 Eastman Kodak Company Electroluminescent device with improved hole transport layer
TW474114B (en) 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
JP3870102B2 (ja) 2001-02-22 2007-01-17 キヤノン株式会社 有機発光素子
US6841932B2 (en) 2001-03-08 2005-01-11 Xerox Corporation Display devices with organic-metal mixed layer
JP2002343576A (ja) * 2001-05-17 2002-11-29 Fuji Photo Film Co Ltd 発光素子
US7141817B2 (en) 2001-11-30 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7158161B2 (en) 2002-09-20 2007-01-02 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
US6936961B2 (en) 2003-05-13 2005-08-30 Eastman Kodak Company Cascaded organic electroluminescent device having connecting units with N-type and P-type organic layers
JP4624653B2 (ja) 2003-05-20 2011-02-02 出光興産株式会社 有機エレクトロルミネッセンス素子及び表示装置
JP2005026121A (ja) 2003-07-03 2005-01-27 Fujitsu Ltd 有機ｅｌ素子及びその製造方法並びに有機ｅｌディスプレイ
US20050025993A1 (en) 2003-07-25 2005-02-03 Thompson Mark E. Materials and structures for enhancing the performance of organic light emitting devices
JP2005123164A (ja) 2003-09-24 2005-05-12 Fuji Photo Film Co Ltd 発光素子
TWI407612B (zh) 2003-09-26 2013-09-01 Semiconductor Energy Lab 發光元件和其製法
JP4476594B2 (ja) 2003-10-17 2010-06-09 淳二 城戸 有機エレクトロルミネッセント素子
JP4683829B2 (ja) 2003-10-17 2011-05-18 淳二 城戸 有機エレクトロルミネッセント素子及びその製造方法
JP4243237B2 (ja) 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP4300176B2 (ja) 2003-11-13 2009-07-22 ローム株式会社 有機エレクトロルミネッセント素子
US7605534B2 (en) 2003-12-02 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element having metal oxide and light-emitting device using the same
JP2005190998A (ja) 2003-12-02 2005-07-14 Semiconductor Energy Lab Co Ltd 発光素子およびそれを用いた発光装置
EP2059094A1 (en) 2003-12-16 2009-05-13 Panasonic Corporation Organic electroluminescent device and method for manufacturing the same
JP2005251587A (ja) 2004-03-04 2005-09-15 Tdk Corp 有機ｅｌ素子
US7619258B2 (en) 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101152935B1 (ko) 2004-05-21 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 발광장치
JP4925569B2 (ja) 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
JP2006295104A (ja) 2004-07-23 2006-10-26 Semiconductor Energy Lab Co Ltd 発光素子およびそれを用いた発光装置
WO2006057420A1 (en) 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7892657B2 (en) 2004-11-30 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP5089063B2 (ja) * 2005-03-23 2012-12-05 株式会社半導体エネルギー研究所 複合材料および複合材料を用いた発光素子並びに発光装置
KR101290099B1 (ko) 2005-03-23 2013-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합재료, 발광소자용 재료, 발광소자, 발광장치 및전자기기
WO2006101016A1 (en) 2005-03-23 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
US7649197B2 (en) 2005-03-23 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Composite material, and light emitting element and light emitting device using the composite material
KR101253998B1 (ko) 2005-04-21 2013-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치 및 전자 장치
EP1724852A3 (en) 2005-05-20 2010-01-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US8017252B2 (en) 2005-06-22 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US8659008B2 (en) 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
EP1911079A4 (en) 2005-07-25 2012-05-09 Semiconductor Energy Lab LIGHTING ELEMENT, ILLUMINATING ELEMENT AND ELECTRONIC DEVICE
JP4668000B2 (ja) * 2005-08-08 2011-04-13 大日本印刷株式会社 有機エレクトロルミネッセント素子用基板、および有機エレクトロルミネッセント素子
JP2007048528A (ja) * 2005-08-08 2007-02-22 Dainippon Printing Co Ltd 有機エレクトロルミネッセント素子用基板、および有機エレクトロルミネッセント素子
JP4667999B2 (ja) * 2005-08-08 2011-04-13 大日本印刷株式会社 有機エレクトロルミネッセント素子用基板、および有機エレクトロルミネッセント素子
WO2007026587A1 (en) 2005-08-29 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative and hole transporting material, light emitting element, and electronic appliance using the same
JP4807013B2 (ja) 2005-09-02 2011-11-02 東レ株式会社 発光素子材料および発光素子
JP5078329B2 (ja) * 2005-11-30 2012-11-21 株式会社半導体エネルギー研究所 発光素子、発光装置並びに電子機器
JP2007335737A (ja) 2006-06-16 2007-12-27 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセント素子およびその製造方法
US20070290604A1 (en) 2006-06-16 2007-12-20 Matsushita Electric Industrial Co., Ltd. Organic electroluminescent device and method of producing the same
US7989802B2 (en) 2007-03-07 2011-08-02 Toray Industries, Inc. Light emitting device material and light emitting device
EP2075850A3 (en) 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
TWI486097B (zh) 2008-12-01 2015-05-21 Semiconductor Energy Lab 發光元件、發光裝置、照明裝置、及電子裝置
JP2011009205A (ja) 2009-05-29 2011-01-13 Semiconductor Energy Lab Co Ltd 発光素子、発光装置及びその作製方法
CN102449800A (zh) 2009-05-29 2012-05-09 株式会社半导体能源研究所 发光元件、发光装置、照明装置以及电子设备
JP5054737B2 (ja) 2009-08-05 2012-10-24 財団法人山形県産業技術振興機構 有機エレクトロルミネッセンス素子
KR101691395B1 (ko) 2009-09-04 2017-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 및 이의 제조방법
SG10201707064RA (en) 2009-09-07 2017-10-30 Semiconductor Energy Lab Light-emitting element, light-emitting device, lighting device, and electronic device
US8771840B2 (en) 2009-11-13 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Heterocyclic compound, light-emitting element, light-emitting device, electronic device, and lighting device
JP2011139044A (ja) 2009-12-01 2011-07-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
WO2012046560A1 (en) * 2010-10-04 2012-04-12 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, and lighting device
JP5952006B2 (ja) 2011-01-28 2016-07-13 株式会社半導体エネルギー研究所 フルオレン誘導体及び発光素子
EP2503618B1 (en) * 2011-03-23 2014-01-01 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, and lighting device

Also Published As

Publication number Publication date
TWI602334B (zh) 2017-10-11
US20120286252A1 (en) 2012-11-15
US9647228B2 (en) 2017-05-09
KR101933951B1 (ko) 2018-12-31
JP2013012467A (ja) 2013-01-17
KR20120127256A (ko) 2012-11-21
TW201308709A (zh) 2013-02-16

Similar Documents

Publication Publication Date Title
JP6023461B2 (ja) 発光素子、発光装置
JP7397135B2 (ja) 発光素子、発光装置および電子機器
US12484439B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
JP6619409B2 (ja) 発光素子、発光装置
JP5925269B2 (ja) 発光素子
JP5530608B2 (ja) 発光素子および発光装置
JP6531137B2 (ja) 発光素子
JP5571900B2 (ja) 発光素子
US9741955B2 (en) Light-emitting element, light-emitting device, and method for manufacturing the same
JP2010153365A (ja) 発光素子、発光装置、電子機器及び照明装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150414

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160223

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160407

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160920

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161007

R150 Certificate of patent or registration of utility model

Ref document number: 6023461

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250