JP6023453B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP6023453B2
JP6023453B2 JP2012089267A JP2012089267A JP6023453B2 JP 6023453 B2 JP6023453 B2 JP 6023453B2 JP 2012089267 A JP2012089267 A JP 2012089267A JP 2012089267 A JP2012089267 A JP 2012089267A JP 6023453 B2 JP6023453 B2 JP 6023453B2
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JP
Japan
Prior art keywords
transistor
data
layer
value
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2012089267A
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English (en)
Japanese (ja)
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JP2012256407A5 (enExample
JP2012256407A (ja
Inventor
大介 松林
大介 松林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012089267A priority Critical patent/JP6023453B2/ja
Publication of JP2012256407A publication Critical patent/JP2012256407A/ja
Publication of JP2012256407A5 publication Critical patent/JP2012256407A5/ja
Application granted granted Critical
Publication of JP6023453B2 publication Critical patent/JP6023453B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Memory System (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012089267A 2011-04-15 2012-04-10 記憶装置 Expired - Fee Related JP6023453B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012089267A JP6023453B2 (ja) 2011-04-15 2012-04-10 記憶装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011091582 2011-04-15
JP2011091582 2011-04-15
JP2011112453 2011-05-19
JP2011112453 2011-05-19
JP2012089267A JP6023453B2 (ja) 2011-04-15 2012-04-10 記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016198843A Division JP6201023B2 (ja) 2011-04-15 2016-10-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2012256407A JP2012256407A (ja) 2012-12-27
JP2012256407A5 JP2012256407A5 (enExample) 2015-05-07
JP6023453B2 true JP6023453B2 (ja) 2016-11-09

Family

ID=47006296

Family Applications (11)

Application Number Title Priority Date Filing Date
JP2012089267A Expired - Fee Related JP6023453B2 (ja) 2011-04-15 2012-04-10 記憶装置
JP2016198843A Active JP6201023B2 (ja) 2011-04-15 2016-10-07 半導体装置
JP2017163000A Active JP6445635B2 (ja) 2011-04-15 2017-08-28 半導体装置
JP2018222971A Active JP6661253B2 (ja) 2011-04-15 2018-11-29 半導体装置
JP2020021069A Active JP6705069B1 (ja) 2011-04-15 2020-02-11 半導体装置
JP2020084228A Active JP6936360B2 (ja) 2011-04-15 2020-05-13 半導体装置
JP2021137924A Withdrawn JP2021185617A (ja) 2011-04-15 2021-08-26 半導体装置
JP2022145753A Active JP7368570B2 (ja) 2011-04-15 2022-09-14 半導体装置
JP2023177015A Active JP7589311B2 (ja) 2011-04-15 2023-10-12 半導体装置
JP2024198481A Active JP7734816B2 (ja) 2011-04-15 2024-11-13 半導体装置
JP2025140679A Pending JP2025161944A (ja) 2011-04-15 2025-08-26 半導体装置

Family Applications After (10)

Application Number Title Priority Date Filing Date
JP2016198843A Active JP6201023B2 (ja) 2011-04-15 2016-10-07 半導体装置
JP2017163000A Active JP6445635B2 (ja) 2011-04-15 2017-08-28 半導体装置
JP2018222971A Active JP6661253B2 (ja) 2011-04-15 2018-11-29 半導体装置
JP2020021069A Active JP6705069B1 (ja) 2011-04-15 2020-02-11 半導体装置
JP2020084228A Active JP6936360B2 (ja) 2011-04-15 2020-05-13 半導体装置
JP2021137924A Withdrawn JP2021185617A (ja) 2011-04-15 2021-08-26 半導体装置
JP2022145753A Active JP7368570B2 (ja) 2011-04-15 2022-09-14 半導体装置
JP2023177015A Active JP7589311B2 (ja) 2011-04-15 2023-10-12 半導体装置
JP2024198481A Active JP7734816B2 (ja) 2011-04-15 2024-11-13 半導体装置
JP2025140679A Pending JP2025161944A (ja) 2011-04-15 2025-08-26 半導体装置

Country Status (2)

Country Link
US (1) US9230648B2 (enExample)
JP (11) JP6023453B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
TWI570891B (zh) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6487738B2 (ja) * 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
JP6906978B2 (ja) 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
WO2022018560A1 (ja) 2020-07-24 2022-01-27 株式会社半導体エネルギー研究所 半導体装置

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Also Published As

Publication number Publication date
JP2019071424A (ja) 2019-05-09
JP2025015626A (ja) 2025-01-30
JP2018014508A (ja) 2018-01-25
JP2012256407A (ja) 2012-12-27
JP6661253B2 (ja) 2020-03-11
JP6445635B2 (ja) 2018-12-26
JP2023178364A (ja) 2023-12-14
JP2025161944A (ja) 2025-10-24
JP7368570B2 (ja) 2023-10-24
JP2020098659A (ja) 2020-06-25
JP2020145457A (ja) 2020-09-10
JP6705069B1 (ja) 2020-06-03
US20120262979A1 (en) 2012-10-18
US9230648B2 (en) 2016-01-05
JP6936360B2 (ja) 2021-09-15
JP2021185617A (ja) 2021-12-09
JP2017021886A (ja) 2017-01-26
JP6201023B2 (ja) 2017-09-20
JP7734816B2 (ja) 2025-09-05
JP2022177145A (ja) 2022-11-30
JP7589311B2 (ja) 2024-11-25

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