JP6008459B2 - 多層増幅器モジュール - Google Patents
多層増幅器モジュール Download PDFInfo
- Publication number
- JP6008459B2 JP6008459B2 JP2009255558A JP2009255558A JP6008459B2 JP 6008459 B2 JP6008459 B2 JP 6008459B2 JP 2009255558 A JP2009255558 A JP 2009255558A JP 2009255558 A JP2009255558 A JP 2009255558A JP 6008459 B2 JP6008459 B2 JP 6008459B2
- Authority
- JP
- Japan
- Prior art keywords
- amplifier
- circuit
- switching device
- matching
- branch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000003321 amplification Effects 0.000 claims description 22
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 22
- 229960005552 PAC-1 Drugs 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 101001104570 Homo sapiens Proteasome assembly chaperone 2 Proteins 0.000 claims description 8
- 101000625842 Homo sapiens Tubulin-specific chaperone E Proteins 0.000 claims description 8
- 102100041008 Proteasome assembly chaperone 2 Human genes 0.000 claims description 8
- YQNRVGJCPCNMKT-JLPGSUDCSA-N 2-(4-benzylpiperazin-1-yl)-n-[(2-hydroxy-3-prop-2-enyl-phenyl)methylideneamino]acetamide Chemical compound OC1=C(CC=C)C=CC=C1\C=N/NC(=O)CN1CCN(CC=2C=CC=CC=2)CC1 YQNRVGJCPCNMKT-JLPGSUDCSA-N 0.000 claims description 6
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 claims description 6
- 101001133600 Homo sapiens Pituitary adenylate cyclase-activating polypeptide type I receptor Proteins 0.000 claims description 6
- 101001080401 Homo sapiens Proteasome assembly chaperone 1 Proteins 0.000 claims description 6
- 102100027583 Proteasome assembly chaperone 1 Human genes 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- YQNRVGJCPCNMKT-LFVJCYFKSA-N 2-[(e)-[[2-(4-benzylpiperazin-1-ium-1-yl)acetyl]hydrazinylidene]methyl]-6-prop-2-enylphenolate Chemical compound [O-]C1=C(CC=C)C=CC=C1\C=N\NC(=O)C[NH+]1CCN(CC=2C=CC=CC=2)CC1 YQNRVGJCPCNMKT-LFVJCYFKSA-N 0.000 claims 4
- 101100462537 Caenorhabditis elegans pac-1 gene Proteins 0.000 claims 4
- 101100117764 Mus musculus Dusp2 gene Proteins 0.000 claims 4
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 101000663006 Homo sapiens Poly [ADP-ribose] polymerase tankyrase-1 Proteins 0.000 description 1
- 102100037664 Poly [ADP-ribose] polymerase tankyrase-1 Human genes 0.000 description 1
- 101710097146 Uncharacterized protein HKLF1 Proteins 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21175—An output signal of a power amplifier being on/off switched
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Description
IC 集積回路デバイス
PAC 増幅器回路
TR トランジスタ段
TIN1、TIN2 第1および第2の入力端子
TOUT 出力端子
SW 切り替え装置
ML 多層基板
B1x、B2x 増幅器回路の枝
TR1、TR2、TR3 増幅段
MC 整合回路
ME 整合要素
C カバー
S 切り替え要素
MO モールドカバー
DC 駆動回路
BIC バイアス制御
SWC スイッチ制御
CP 接触パッド
Claims (13)
- 増幅器モジュールであって、
第1の入力端子(TIN1)に接続された第1の増幅器回路(PAC1)を有し、該第1の増幅器回路(PAC1)が該第1の入力端子(TIN1)に接続されたx個の第1の増幅器枝(B1)を有する、集積回路デバイス(IC)と、
各々のTX周波数帯に割り当てられたy個の第1の出力端子(TOUT)と、
第1の出力端子(TOUT)の任意の1つに第1の増幅器枝(B1)のいずれか1つ以上を独立的に接続する第1の切り替え装置(SW)と、
頂部に集積回路デバイス(IC)および第1の切り替え装置(SW)が取り付けられ、多数の整合回路(MC)の部分であるパッシブな整合要素(ME)が内部に統合される、多層基板(ML)とを有し、
x≧2およびy≧2であり、
整合回路(MC)は、第1の増幅器回路(PAC1)と第1の切り替え装置(SW)との間に接続された第1の整合回路(MC)と、第1の切り替え装置(SW)とそれぞれの第1の出力端子(TOUT)との間に接続された第2の整合回路(MC)と、を含み、
各々の第1の増幅器枝(B1)が、その出力において異なるレベルの電力を送出するようになされ、第1の整合回路(MC)および第2の整合回路(MC)により第1の出力端子(TOUT)における負荷に整合され、
第1の入力端子(TIN1)に接続された2つ以上の第1の増幅器枝(B1)が所望の同一の第1の出力端子(TOUT)に接続可能に構成され、前記2つ以上の第1の増幅器枝(B1)のうち2つが並列に同一の第1の出力端子(TOUT)に接続されることにより、第3の電力レベルが生じるように前記2つの第1の増幅器枝(B1)の電力レベルが互いに加算され、
その結果、第1の入力端子(TIN1)が第1の増幅器枝(B1)を介して同一の第1の出力端子(TOUT)に接続されたままの状態で、第1の増幅器枝(B1)を異なるものの間で切り換えることによって、または所望の数の第1の増幅器枝(B1)を並列に追加で接続することによって、増幅器モジュールが異なる電力レベルの間で切り替わるように構成され、
第1の整合回路(MC)および第2の整合回路(MC)が、第1の増幅器回路(PAC1)の各第1の増幅器枝(B1)を各第1の出力端子(TOUT)における同一の共通出力インピーダンスに整合させ、
第1の切り替え装置(SW)が半導体デバイスによって形成され、
第1の切り替え装置(SW)が多数のスイッチ(S)を有し、スイッチがxPyTタイプのスイッチを形成し、
第1の切り替え装置(SW)が、所望の電力レベルを有する第1の増幅器枝(B1)を選択するレベルスイッチと、それぞれの周波数帯に割り当てられた第1の出力端子(TOUT)を選択するバンドスイッチとを有し、
各レベルスイッチおよびバンドスイッチが同一の共通接続点に接続される、増幅器モジュール。 - 第2の入力端子(TIN2)、第2の増幅器回路(PAC2)、第2の出力端子、および任意の1つの第2の出力端子に第2の増幅器枝(B2)を各々接続する第2の切り替え装置(SW)と、
第2の出力端子のそれぞれ1つにおける負荷に、第2の増幅器回路(PAC2)の多数の第2の増幅器枝(B2)を整合させる整合回路(MC)とを有し、
第1の入力端子(TIN1)が第1の周波数範囲の信号に接続されるようになされ、第2の入力端子(TIN2)が第1の周波数範囲とは異なる第2の周波数範囲の信号に接続されるようになされる、請求項1に記載の増幅器モジュール。 - 整合回路(MC)が多層基板(ML)内に統合された第1の整合要素と、多層基板(ML)の頂部に取り付けられた別個のパッシブな要素である第2の整合要素とを有する、請求項1または2に記載の増幅器モジュール。
- 整合回路(MC)が、集積回路デバイス(IC)の半導体基板へと統合された整合要素を有する、請求項1から3のいずれか一項に記載の増幅器モジュール。
- 第1の切り替え装置(SW)がMEMSデバイスを有する、請求項1から4のいずれか一項に記載の増幅器モジュール。
- 第1の切り替え装置(SW)が半導体基板に形成され、
増幅器回路(PAC1、PAC2)を駆動する手段および論理回路が同一の半導体基板に形成される、請求項1から5のいずれか一項に記載の増幅器モジュール。 - 異なるバイアス電圧または電流を増幅器回路(PAC1、PAC2)に送出する電圧レギュレータが、第1の切り替え装置(SW)の半導体基板に形成される、請求項1から6のいずれか一項に記載の増幅器モジュール。
- 増幅器回路(PAC1、PAC2)の任意の増幅器枝(B1、B2)が、同一の入力端子(TIN1、TIN2)に接続された他のいかなる増幅器枝(B1、B2)の段の数とも異なる数の増幅段を有し、各々の増幅段が同一の技術による半導体要素を有する、請求項1から7のいずれか一項に記載の増幅器モジュール。
- 増幅器回路(PAC1、PAC2)がガリウムベースの半導体からなるトランジスタを有する、請求項1から8のいずれか一項に記載の増幅器モジュール。
- WCDMA無線通信システムの5つの異なる周波数帯に割り当てられた少なくとも5つの第1または第2の出力端子(TOUT)を有する、請求項1から9のいずれか一項に記載の増幅器モジュール。
- 多層基板(ML)が、パッシブな要素およびパッシブな要素を含む回路が統合される、HTCC、LTCCおよび積層板のうち1つを有する、請求項1から10のいずれか一項に記載の増幅器モジュール。
- 集積回路デバイス(IC)、第1の切り替え装置(SW)および場合によっては多層基板(ML)の頂部に取り付けられた別個のパッシブな構成要素を覆うように、多層基板(ML)に堆積された成型カバーを有する、請求項1から11のいずれか一項に記載の増幅器モジュール。
- 集積回路デバイス(IC)、第1の切り替え装置(SW)および場合によっては多層基板(ML)の頂部に取り付けられた別個のパッシブな構成要素を覆うように、多層基板(ML)の頂部に取り付けられた金属シートからなるカバー(C)を有する、請求項1から11のいずれか一項に記載の増幅器モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/266,733 US7804365B2 (en) | 2008-11-07 | 2008-11-07 | Multilayer amplifier module |
US12/266,733 | 2008-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010154512A JP2010154512A (ja) | 2010-07-08 |
JP6008459B2 true JP6008459B2 (ja) | 2016-10-19 |
Family
ID=42134213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009255558A Active JP6008459B2 (ja) | 2008-11-07 | 2009-11-06 | 多層増幅器モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US7804365B2 (ja) |
JP (1) | JP6008459B2 (ja) |
DE (1) | DE102009051627B4 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8432237B2 (en) * | 2009-05-21 | 2013-04-30 | Qualcomm, Incorporated | Output circuit with integrated impedance matching, power combining and filtering for power amplifiers and other circuits |
US8212619B2 (en) * | 2009-07-23 | 2012-07-03 | Qualcomm, Incorporated | Split-biased current scalable buffer |
WO2012143748A1 (en) * | 2011-04-20 | 2012-10-26 | Freescale Semiconductor, Inc. | Amplifiers and related integrated circuits |
US10938360B1 (en) | 2011-10-26 | 2021-03-02 | Micro Mobio Corporation | Multimode multiband wireless device with broadband power amplifier |
US9667306B2 (en) * | 2011-10-26 | 2017-05-30 | Adam James Wang | Multimode multiband wireless device with broadband power amplifier |
CN103875182A (zh) * | 2011-10-27 | 2014-06-18 | 三菱电机株式会社 | 高频放大器模块及高频放大器模块单元 |
WO2014028667A1 (en) * | 2012-08-15 | 2014-02-20 | Skyworks Solutions, Inc. | Systems, circuits and methods related to controllers for radio-frequency power amplifiers |
CN110121768B (zh) * | 2016-12-14 | 2023-10-31 | 株式会社村田制作所 | 前端模块以及通信装置 |
CN110392926B (zh) * | 2017-03-14 | 2022-12-06 | 株式会社村田制作所 | 高频模块 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3131931B2 (ja) * | 1992-03-13 | 2001-02-05 | 日本電信電話株式会社 | 高周波高出力増幅装置 |
JPH06132746A (ja) * | 1992-10-20 | 1994-05-13 | Sharp Corp | 電力増幅器 |
JPH10190378A (ja) * | 1996-12-27 | 1998-07-21 | Nec Corp | 超高効率線形増幅器 |
JP2005277728A (ja) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | 電力増幅器の電源電圧調整回路、高周波モジュール及び無線通信装置 |
CN100536324C (zh) * | 2004-07-14 | 2009-09-02 | 三菱电机株式会社 | 高输出放大器 |
JP2006094206A (ja) * | 2004-09-24 | 2006-04-06 | Toshiba Corp | 高周波スイッチ回路及び半導体装置 |
JP2006166153A (ja) * | 2004-12-09 | 2006-06-22 | Matsushita Electric Ind Co Ltd | 高周波電力送信回路およびそれを用いた無線通信装置 |
JP2006222828A (ja) * | 2005-02-14 | 2006-08-24 | Hitachi Kokusai Electric Inc | 増幅装置 |
JP2006270923A (ja) * | 2005-02-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 電力増幅器およびポーラー変調システム |
JP4892253B2 (ja) * | 2006-02-28 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 電子装置 |
KR101083920B1 (ko) * | 2006-08-11 | 2011-11-15 | 엘지에릭슨 주식회사 | 다중 입출력 경로 도허티 증폭기 |
JP2008205821A (ja) * | 2007-02-20 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 高周波電力増幅装置及びそれを用いた送信装置 |
JP2008236683A (ja) * | 2007-03-23 | 2008-10-02 | Mitsubishi Electric Corp | 電力増幅回路 |
JP4849029B2 (ja) * | 2007-07-23 | 2011-12-28 | 三菱電機株式会社 | 電力増幅器 |
-
2008
- 2008-11-07 US US12/266,733 patent/US7804365B2/en active Active
-
2009
- 2009-11-02 DE DE102009051627A patent/DE102009051627B4/de active Active
- 2009-11-06 JP JP2009255558A patent/JP6008459B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010154512A (ja) | 2010-07-08 |
US7804365B2 (en) | 2010-09-28 |
DE102009051627A1 (de) | 2010-06-02 |
DE102009051627B4 (de) | 2013-08-29 |
US20100117738A1 (en) | 2010-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6008459B2 (ja) | 多層増幅器モジュール | |
US7359677B2 (en) | Device and methods for high isolation and interference suppression switch-filter | |
US7149496B2 (en) | High-frequency module and radio communication apparatus | |
CN103813635B (zh) | 高频电路模块 | |
JP5239309B2 (ja) | 半導体装置 | |
CN101252352B (zh) | 半导体集成电路器件及高频功率放大器模块 | |
CN101375515B (zh) | 复合高频部件及移动通信装置 | |
EP1453135A1 (en) | Antenna switch module, all-in-one communication module, communication apparatus and method for manufacturing antenna switch module | |
TW200417134A (en) | RF power transistor with internal bias feed | |
CN101467346A (zh) | 杜赫功率放大器 | |
US10742189B2 (en) | Switched multi-coupler apparatus and modules and devices using same | |
CN112953401A (zh) | 集成多路径功率放大器 | |
JP2007312031A (ja) | 電子デバイス | |
EP3627697A1 (en) | Systems and methods for fast switching time division duplex operation of power amplifiers | |
US8279010B2 (en) | Radio frequency power amplifier | |
US7409200B2 (en) | Module integration integrated circuits | |
CN109997311B (zh) | 布线基板、耦合器模块以及通信装置 | |
Larcher et al. | A MEMS reconfigurable quad-band class-E power amplifier for GSM standard | |
CN108023558B (zh) | 放大器架构的重新配置 | |
CN101728071B (zh) | 变压器 | |
JP2003142981A5 (ja) | ||
WO2011104774A1 (ja) | 半導体装置 | |
WO2005046071A1 (ja) | 高周波モジュール | |
US11418225B2 (en) | Radio frequency module and communication device | |
CN220139553U (zh) | 一种射频前端模组 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121105 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130801 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130820 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131119 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140513 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150401 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150406 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20150703 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160418 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160719 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160913 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6008459 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |