JP6004946B2 - 太陽電池及び太陽電池モジュール - Google Patents
太陽電池及び太陽電池モジュール Download PDFInfo
- Publication number
- JP6004946B2 JP6004946B2 JP2013001089A JP2013001089A JP6004946B2 JP 6004946 B2 JP6004946 B2 JP 6004946B2 JP 2013001089 A JP2013001089 A JP 2013001089A JP 2013001089 A JP2013001089 A JP 2013001089A JP 6004946 B2 JP6004946 B2 JP 6004946B2
- Authority
- JP
- Japan
- Prior art keywords
- surface side
- semiconductor substrate
- solar cell
- light
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 73
- 239000010408 film Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 31
- 238000006243 chemical reaction Methods 0.000 description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 238000000926 separation method Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013001089A JP6004946B2 (ja) | 2013-01-08 | 2013-01-08 | 太陽電池及び太陽電池モジュール |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013001089A JP6004946B2 (ja) | 2013-01-08 | 2013-01-08 | 太陽電池及び太陽電池モジュール |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014135319A JP2014135319A (ja) | 2014-07-24 |
| JP2014135319A5 JP2014135319A5 (zh) | 2014-12-11 |
| JP6004946B2 true JP6004946B2 (ja) | 2016-10-12 |
Family
ID=51413415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013001089A Expired - Fee Related JP6004946B2 (ja) | 2013-01-08 | 2013-01-08 | 太陽電池及び太陽電池モジュール |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6004946B2 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6414704B2 (ja) * | 2014-02-06 | 2018-10-31 | パナソニックＩｐマネジメント株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
| EP3542403A4 (en) | 2016-11-17 | 2020-09-30 | Ubiquitous Energy, Inc. | SINGLE CELL PHOTOVOLTAIC MODULE |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5776882A (en) * | 1980-10-30 | 1982-05-14 | Seiko Epson Corp | Thin film type solar battery |
| JP4097549B2 (ja) * | 2003-03-17 | 2008-06-11 | 三洋電機株式会社 | 太陽電池装置およびその製造方法 |
| JP4948219B2 (ja) * | 2007-03-23 | 2012-06-06 | 三洋電機株式会社 | 太陽電池 |
| JP5421701B2 (ja) * | 2009-09-09 | 2014-02-19 | 株式会社カネカ | 結晶シリコン太陽電池及びその製造方法 |
| US9337361B2 (en) * | 2010-11-26 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| JP5675476B2 (ja) * | 2011-04-18 | 2015-02-25 | 株式会社カネカ | 結晶シリコン系太陽電池 |
-
2013
- 2013-01-08 JP JP2013001089A patent/JP6004946B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014135319A (ja) | 2014-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5535709B2 (ja) | 太陽電池、その太陽電池を用いた太陽電池モジュール及び太陽電池の製造方法 | |
| JP5848421B2 (ja) | 太陽電池及びその製造方法 | |
| US9472711B2 (en) | Photovoltaic element and method of manufacturing the same, and solar battery module | |
| US20080178925A1 (en) | Thin film solar cell module of see-through type and method for fabricating the same | |
| JP2009152222A (ja) | 太陽電池素子の製造方法 | |
| WO2014034677A1 (ja) | 光起電力素子およびその製造方法 | |
| JP2008294080A (ja) | 太陽電池セル及び太陽電池セルの製造方法 | |
| JP4578123B2 (ja) | 太陽電池モジュール | |
| KR20130058497A (ko) | 태양전지 및 그 제조 방법 | |
| JP2012015523A (ja) | 太陽電池モジュール及びその製造方法 | |
| JPWO2015040780A1 (ja) | 太陽電池および太陽電池モジュール | |
| JP5049607B2 (ja) | 薄膜太陽電池および薄膜太陽電池モジュール | |
| JP6656225B2 (ja) | 太陽電池およびその製造方法、ならびに太陽電池モジュール | |
| KR101729745B1 (ko) | 태양전지 및 이의 제조 방법 | |
| US20200203540A1 (en) | Solar cell and electronic device provided with said solar cell | |
| JP2013537364A (ja) | 太陽光発電装置及びその製造方法 | |
| JP6141670B2 (ja) | 太陽電池の製造方法 | |
| JPWO2010064549A1 (ja) | 薄膜光電変換装置の製造方法 | |
| JP6207414B2 (ja) | 光起電力素子およびその製造方法 | |
| CN114038922A (zh) | 一种提升绝缘隔离效果的背接触异质结太阳能电池及其制作方法 | |
| JP6004946B2 (ja) | 太陽電池及び太陽電池モジュール | |
| WO2013057978A1 (ja) | 光電変換装置およびその製造方法、光電変換モジュール | |
| US8748728B2 (en) | Thin-film solar cell module and a manufacturing method thereof | |
| JP5885677B2 (ja) | 太陽電池モジュール及びその製造方法 | |
| JP6294694B2 (ja) | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141023 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141023 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150819 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150825 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151022 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160329 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160525 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160809 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160906 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6004946 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |