JPWO2015040780A1 - 太陽電池および太陽電池モジュール - Google Patents
太陽電池および太陽電池モジュール Download PDFInfo
- Publication number
- JPWO2015040780A1 JPWO2015040780A1 JP2015537540A JP2015537540A JPWO2015040780A1 JP WO2015040780 A1 JPWO2015040780 A1 JP WO2015040780A1 JP 2015537540 A JP2015537540 A JP 2015537540A JP 2015537540 A JP2015537540 A JP 2015537540A JP WO2015040780 A1 JPWO2015040780 A1 JP WO2015040780A1
- Authority
- JP
- Japan
- Prior art keywords
- region
- side electrode
- solar cell
- layer
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000007789 sealing Methods 0.000 claims description 19
- 238000013459 approach Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 36
- 238000007747 plating Methods 0.000 description 27
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000010248 power generation Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本実施形態における太陽電池70の構成について、図1、図2を参照しながら詳細に説明する。
主面10bを有するベース基板10と、
主面10b上の第1領域W1に設けられる第1導電型層12nと、
主面10b上の第1領域W1とは異なる第2領域W2に設けられる第2導電型層13pと、
第1導電型層12nの上に設けられるn側電極14と、
第2導電型層13pの上に設けられるp側電極15と、
n側電極14とp側電極15の間を分離する溝31、32と、を備える。
主面10bは、当該主面10bの外周に沿って設けられる外周領域C1と、外周領域C1の内側に設けられる内側領域C2とを有し、
溝31、32は、内側領域C2よりも外周領域C1において、n側電極14とp側電極15が離間する方向の幅W51、W52が広く設けられる。
本実施形態における太陽電池モジュール100の構成について、図10を参照しながら詳細に説明する。
複数の太陽電池70と、太陽電池70を封止する封止層42と、を備える。
太陽電池70は、
主面10bを有するベース基板10と、
主面10b上の第1領域W1に設けられる第1導電型層12nと、
主面10b上の第1領域W1とは異なる第2領域W2に設けられる第2導電型層13pと、
第1導電型層12nの上に設けられるn側電極14と、
第2導電型層13pの上に設けられるp側電極15と、
n側電極14とp側電極15の間を分離する溝31、32と、を備える。
主面10bは、当該主面10bの外周に沿って設けられる外周領域C1と、外周領域C1の内側に設けられる内側領域C2とを有し、
溝31、32は、内側領域C2よりも外周領域C1において、n側電極14とp側電極15が離間する方向の幅W51、W52が広く設けられる。
変形例1における太陽電池70の構成について、図12を参照しながら詳細に説明する。
溝31、32は、絶縁層18が設けられる位置に配置されてもよい。
絶縁層18は、内側領域C2よりも外周領域C1において、n側電極14とp側電極15が離間する方向の幅が広く設けられてもよい。
変形例2における太陽電池70の構成について、図13を参照しながら詳細に説明する。
上述の実施形態においては、外周領域C1と内側領域C2とで溝の幅を変えることとしたが、さらなる変形例として、外周領域C1に設けられる溝の幅を外周からの距離に応じて変えることとしてもよい。例えば、外周領域C1に設けられる複数の溝については、外周からの距離が近いほど溝の幅を広くし、外周からの距離が遠いほど溝の幅を狭くする。その一方で、内側領域C2に設けられる溝の幅は外周からの距離によらず一定とする。
Claims (5)
- 主面を有するベース基板と、
前記主面上の第1領域に設けられる第1導電型層と、
前記主面上の前記第1領域とは異なる第2領域に設けられる第2導電型層と、
前記第1導電型層の上に設けられるn側電極と、
前記第2導電型層の上に設けられるp側電極と、
前記n側電極と前記p側電極の間を分離する溝と、
を備え、
前記主面は、当該主面の外周に沿って設けられる外周領域と、前記外周領域の内側に設けられる内側領域とを有し、
前記溝は、前記内側領域よりも前記外周領域において、前記n側電極と前記p側電極が離間する方向の幅が広く設けられる太陽電池。 - 前記第1導電型層と前記第2導電型層との間に設けられる絶縁層をさらに備え、
前記溝は、前記絶縁層が設けられる位置に配置され、
前記絶縁層は、前記内側領域よりも前記外周領域において、前記方向の幅が広く設けられる請求項1に記載の太陽電池。 - 前記溝は、前記主面の外周に近づくにつれて前記方向の幅が広く設けられる請求項1または2に記載の太陽電池。
- 前記溝は、前記外周領域における前記方向の幅が、前記外周からの距離に応じて定められる一方、前記内側領域における前記方向の幅が、前記外周からの距離によらずに定められる請求項3に記載の太陽電池。
- 複数の太陽電池と、前記太陽電池を封止する封止層と、を備え、
前記太陽電池は、
主面を有するベース基板と、
前記主面上の第1領域に設けられる第1導電型層と、
前記主面上の前記第1領域とは異なる第2領域に設けられる第2導電型層と、
前記第1導電型層の上に設けられるn側電極と、
前記第2導電型層の上に設けられるp側電極と、
前記n側電極と前記p側電極の間を分離する溝と、
を備え、
前記主面は、当該主面の外周に沿って設けられる外周領域と、前記外周領域の内側に設けられる内側領域とを有し、
前記溝は、前記内側領域よりも前記外周領域において、前記n側電極と前記p側電極が離間する方向の幅が広く設けられる太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013194284 | 2013-09-19 | ||
JP2013194284 | 2013-09-19 | ||
PCT/JP2014/003952 WO2015040780A1 (ja) | 2013-09-19 | 2014-07-28 | 太陽電池および太陽電池モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2015040780A1 true JPWO2015040780A1 (ja) | 2017-03-02 |
Family
ID=52688454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015537540A Pending JPWO2015040780A1 (ja) | 2013-09-19 | 2014-07-28 | 太陽電池および太陽電池モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US10121917B2 (ja) |
EP (1) | EP3048648B1 (ja) |
JP (1) | JPWO2015040780A1 (ja) |
WO (1) | WO2015040780A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8597970B2 (en) | 2011-12-21 | 2013-12-03 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
US9837576B2 (en) | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9525083B2 (en) | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
US11355657B2 (en) | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
CN107408588B (zh) * | 2015-03-30 | 2019-12-13 | 松下知识产权经营株式会社 | 太阳能电池单元和太阳能电池单元的制造方法 |
JP6681607B2 (ja) * | 2015-09-30 | 2020-04-15 | パナソニックIpマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
US9502601B1 (en) | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
CN111095573A (zh) * | 2017-09-13 | 2020-05-01 | 株式会社钟化 | 太阳能电池、太阳能电池的制造方法以及太阳能电池模块 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010283052A (ja) * | 2009-06-03 | 2010-12-16 | Sharp Corp | 配線シート、裏面電極型太陽電池セル、配線シート付き太陽電池セルおよび太陽電池モジュール |
WO2011093329A1 (ja) * | 2010-01-26 | 2011-08-04 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
JP2011176010A (ja) * | 2010-02-23 | 2011-09-08 | Sharp Corp | 裏面電極型太陽電池セル、配線シート、配線シート付き太陽電池セルおよび太陽電池モジュール |
JP3173495U (ja) * | 2011-11-25 | 2012-02-09 | 三洋電機株式会社 | 太陽電池 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5642591B2 (ja) | 2011-02-28 | 2014-12-17 | 三洋電機株式会社 | 太陽電池モジュール |
-
2014
- 2014-07-28 WO PCT/JP2014/003952 patent/WO2015040780A1/ja active Application Filing
- 2014-07-28 EP EP14846272.4A patent/EP3048648B1/en not_active Not-in-force
- 2014-07-28 JP JP2015537540A patent/JPWO2015040780A1/ja active Pending
-
2016
- 2016-03-17 US US15/072,903 patent/US10121917B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010283052A (ja) * | 2009-06-03 | 2010-12-16 | Sharp Corp | 配線シート、裏面電極型太陽電池セル、配線シート付き太陽電池セルおよび太陽電池モジュール |
WO2011093329A1 (ja) * | 2010-01-26 | 2011-08-04 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
JP2011176010A (ja) * | 2010-02-23 | 2011-09-08 | Sharp Corp | 裏面電極型太陽電池セル、配線シート、配線シート付き太陽電池セルおよび太陽電池モジュール |
JP3173495U (ja) * | 2011-11-25 | 2012-02-09 | 三洋電機株式会社 | 太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
US10121917B2 (en) | 2018-11-06 |
WO2015040780A1 (ja) | 2015-03-26 |
EP3048648A1 (en) | 2016-07-27 |
US20160197210A1 (en) | 2016-07-07 |
EP3048648B1 (en) | 2019-04-17 |
EP3048648A4 (en) | 2016-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6640174B2 (ja) | 太陽電池及びその製造方法 | |
WO2015040780A1 (ja) | 太陽電池および太陽電池モジュール | |
US11152519B2 (en) | Manufacturing method for solar cell | |
US10680122B2 (en) | Solar cell and method for manufacturing the same | |
JP5171490B2 (ja) | 集積型薄膜太陽電池 | |
JP6337352B2 (ja) | 太陽電池 | |
JP6436424B2 (ja) | 太陽電池セルおよび太陽電池セルの製造方法 | |
KR101642158B1 (ko) | 태양 전지 모듈 | |
JP6414767B2 (ja) | 太陽電池セル | |
KR101714779B1 (ko) | 태양전지 및 이의 제조 방법 | |
JP2018170482A (ja) | 太陽電池セル及び太陽電池セルの製造方法 | |
WO2012090650A1 (ja) | 太陽電池 | |
JP6380822B2 (ja) | 太陽電池セル | |
JP6311911B2 (ja) | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 | |
WO2014118863A1 (ja) | 光起電力装置 | |
JP6709981B2 (ja) | 太陽電池セル、太陽電池モジュール、および太陽電池セルの製造方法 | |
JP6167414B2 (ja) | 太陽電池および太陽電池モジュール | |
KR101141219B1 (ko) | 태양 전지 및 그 제조 방법 | |
WO2012132932A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP6681607B2 (ja) | 太陽電池セルおよび太陽電池セルの製造方法 | |
KR20130011116A (ko) | 태양전지 모듈 | |
JP6206843B2 (ja) | 太陽電池 | |
WO2018051659A1 (ja) | 太陽電池モジュールおよび太陽電池セル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170411 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180612 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190108 |