JP6436424B2 - 太陽電池セルおよび太陽電池セルの製造方法 - Google Patents
太陽電池セルおよび太陽電池セルの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 145
- 238000007747 plating Methods 0.000 claims description 137
- 239000002184 metal Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 238000000926 separation method Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 377
- 239000011241 protective layer Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
互いに隣接する第1領域W1と第2領域W2を有する半導体基板10の主面(第2主面10b)上の第1領域W1に第1導電型の第1半導体層12を形成することと、
第1領域W1の一部であって第2領域W2に隣接する絶縁領域W3の第1半導体層12上に絶縁層16を形成することと、
第2領域W2の主面(第2主面10b)上および絶縁領域W3の絶縁層16上にわたって第2導電型の第2半導体層13を形成することと、
第1半導体層12および第2半導体層13の上に透明導電層17を形成することと、
透明導電層17の上にシード層18を形成することと、
絶縁領域W3のシード層18の上にめっきレジスト40を設けてシード層18の上にめっき層19を成長させることと、
めっきレジスト40を除去し、透明導電層17およびシード層18の一部を除去することと、を備える。
めっき層19を成長させることは、第1領域W1上に第1めっき層19aを形成することと、第2領域W2上に第2めっき層19bを形成することと、を含み、
第2めっき層19bを形成することは、主面(第2主面10b)から離れるにつれて第2めっき層19bが第1めっき層19aに近づくように突出するとともに、第1めっき層19aとの間に隙間42が設けられるように第2めっき層19bを形成することを含み、
透明導電層17およびシード層18の一部を除去することは、隙間42をマスクとして透明導電層17の一部をレーザ照射またはドライエッチングすることを含む。
第2領域W2は、x方向に延びる複数の第2フィンガー領域W21と、複数の第2フィンガー領域W21の一端を接続してy方向に延びる第2バスバー領域W22とを含み、
第1領域W1および第2領域W2は、複数の第1フィンガー領域W12と複数の第2フィンガー領域W21が互いに間挿し合うように設けられ、
めっき層19を成長させることは、第1バスバー領域W11と第2フィンガー領域W21の境界を跨いでx方向に延在し、境界から第1バスバー領域W11側に延びる長さX1よりも境界から第2フィンガー領域W21側に延びる長さX2が大きくなるようにめっきレジスト40を設けることを含んでもよい。
透明導電層17およびシード層18の一部を除去することは、第1バスバー電極14aに沿ってy方向にレーザ50を照射して透明導電層17の一部を除去することを含んでもよい。
互いに隣接する第1領域W1と第2領域W2が設けられる主面(第2主面10b)を有する半導体基板10と、
主面(第2主面10b)上の第1領域W1に設けられる第1導電型の第1半導体層12と、
第1領域W1の一部であって第2領域W2に隣接する絶縁領域W3の第1半導体層12上に設けられる絶縁層16と、
第2領域W2の主面(第2主面10b)上および絶縁領域W3の絶縁層16上にわたって設けられる第2導電型の第2半導体層13と、
第1半導体層12および第2半導体層13の上に設けられる透明導電層17と、
第1領域W1の透明導電層17の上に設けられる第1金属電極21と、
第2領域W2の透明導電層17の上に設けられる第2金属電極26と、を備え、
第2金属電極26は、主面(第2主面10b)から離れるにつれて第1金属電極21に近づくように突出する張出部(第2張出部28)を有し、第1金属電極21との間の隙間が絶縁領域W3に位置するように形成され、
透明導電層17は、絶縁領域W3のうち隙間に位置的に対応する分離領域W5を避けて設けられる。
第2金属電極26は、x方向に延びる複数の第2フィンガー電極15bと、複数の第2フィンガー電極15bの一端を接続してy方向に延びる第2バスバー電極15aとを含み、
第1金属電極21および第2金属電極26は、複数の第1フィンガー電極14bと複数の第2フィンガー電極15bが互いに間挿し合うように設けられ、
透明導電層17は、第1バスバー電極14aと複数の第2フィンガー電極15bの間に位置する複数のバスバー分離領域(第1バスバー分離領域W51)を避けて設けられ、
複数のバスバー分離領域(第1バスバー分離領域W51)は、複数の第2フィンガー電極15bよりも第1バスバー電極14aの近くに設けられてもよい。
Claims (10)
- 互いに隣接する第1領域と第2領域を有する半導体基板の主面上の前記第1領域に第1導電型の第1半導体層を形成することと、
前記第1領域の一部であって前記第2領域に隣接する絶縁領域の前記第1半導体層上に絶縁層を形成することと、
前記第2領域の前記主面上および前記絶縁領域の前記絶縁層上にわたって第2導電型の第2半導体層を形成することと、
前記第1半導体層および前記第2半導体層の上に透明導電層を形成することと、
前記透明導電層の上にシード層を形成することと、
前記絶縁領域の前記シード層の上にめっきレジストを設けて前記シード層の上にめっき層を成長させることと、
前記めっきレジストを除去し、前記透明導電層および前記シード層の一部を除去することと、を備え、
前記めっき層を成長させることは、前記第1領域上に第1めっき層を形成することと、前記第2領域上に第2めっき層を形成することと、を含み、
前記第2めっき層を形成することは、前記主面から離れるにつれて前記第2めっき層が前記第1めっき層に近づくように突出するとともに、前記第1めっき層との間に隙間が設けられるように前記第2めっき層を形成することを含み、
前記透明導電層および前記シード層の一部を除去することは、前記隙間をマスクとして前記透明導電層の一部をレーザ照射またはドライエッチングすることを含む太陽電池セルの製造方法。 - 前記透明導電層および前記シード層の一部を除去することは、前記シード層をウェットエッチングすることを含む請求項1に記載の太陽電池セルの製造方法。
- 前記透明導電層および前記シード層の一部を除去することは、前記隙間をマスクとして前記シード層の一部をドライエッチングすることを含む請求項1に記載の太陽電池セルの製造方法。
- 前記めっき層を成長させることは、前記絶縁領域に隣接する前記第2領域の一部を覆うように前記めっきレジストを設けることを含む請求項1から3のいずれか一項に記載の太陽電池セルの製造方法。
- 前記第1領域は、x方向に延びる複数の第1フィンガー領域と、前記複数の第1フィンガー領域の一端を接続してy方向に延びる第1バスバー領域とを含み、
前記第2領域は、x方向に延びる複数の第2フィンガー領域と、前記複数の第2フィンガー領域の一端を接続してy方向に延びる第2バスバー領域とを含み、
前記第1領域および前記第2領域は、前記複数の第1フィンガー領域と前記複数の第2フィンガー領域が互いに間挿し合うように設けられ、
前記めっき層を成長させることは、前記第1バスバー領域と前記第2フィンガー領域の境界を跨いでx方向に延在し、前記境界から前記第1バスバー領域側に延びる長さよりも前記境界から前記第2フィンガー領域側に延びる長さが大きくなるように前記めっきレジストを設けることを含む請求項1から4のいずれか一項に記載の太陽電池セルの製造方法。 - 前記第1めっき層を成長させることは、前記第1バスバー領域においてy方向に延びる第1バスバー電極を形成することを含み、
前記透明導電層および前記シード層の一部を除去することは、前記第1バスバー電極に沿ってy方向にレーザを照射して前記透明導電層の一部を除去することを含む請求項5に記載の太陽電池セルの製造方法。 - 互いに隣接する第1領域と第2領域が設けられる主面を有する半導体基板と、
前記主面上の第1領域に設けられる第1導電型の第1半導体層と、
前記第1領域の一部であって前記第2領域に隣接する絶縁領域の前記第1半導体層上に設けられる絶縁層と、
前記第2領域の前記主面上および前記絶縁領域の前記絶縁層上にわたって設けられる第2導電型の第2半導体層と、
前記第1半導体層および前記第2半導体層の上に設けられる透明導電層と、
前記第1領域の前記透明導電層の上に設けられる第1金属電極と、
前記第2領域の前記透明導電層の上に設けられる第2金属電極と、を備え、
前記第2金属電極は、前記透明導電層から離れて前記第1金属電極に近づくように突出する張出部を有し、前記第1金属電極との間の隙間が前記絶縁領域に位置するように形成され、
前記透明導電層は、前記絶縁領域のうち前記隙間に位置的に対応する分離領域を避けて設けられ、
前記張出部は、前記絶縁領域の前記透明導電層の上に空間を設けて重なる太陽電池セル。 - 前記張出部は、前記第2領域と前記絶縁領域の境界を跨ぐように前記第2領域から前記絶縁領域に向けて突出し、前記第2領域と前記絶縁領域の前記境界上の前記透明導電層の上に空間を設けて重なる請求項7に記載の太陽電池セル。
- 前記第1金属電極は、x方向に延びる複数の第1フィンガー電極と、前記複数の第1フィンガー電極の一端を接続してy方向に延びる第1バスバー電極とを含み、
前記第2金属電極は、x方向に延びる複数の第2フィンガー電極と、前記複数の第2フィンガー電極の一端を接続してy方向に延びる第2バスバー電極とを含み、
前記第1金属電極および前記第2金属電極は、前記複数の第1フィンガー電極と前記複数の第2フィンガー電極が互いに間挿し合うように設けられ、
前記透明導電層は、前記第1バスバー電極と前記複数の第2フィンガー電極の間に位置する複数のバスバー分離領域を避けて設けられ、
前記複数のバスバー分離領域は、前記複数の第2フィンガー電極よりも前記第1バスバー電極の近くに設けられる請求項7または8に記載の太陽電池セル。 - 前記絶縁領域における前記張出部と前記透明導電層の間隔は、前記分離領域に近づくにつれて大きくなる請求項7から9のいずれか一項に記載の太陽電池セル。
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