JP5997758B2 - 有機電子装置の製造方法 - Google Patents
有機電子装置の製造方法 Download PDFInfo
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- JP5997758B2 JP5997758B2 JP2014502475A JP2014502475A JP5997758B2 JP 5997758 B2 JP5997758 B2 JP 5997758B2 JP 2014502475 A JP2014502475 A JP 2014502475A JP 2014502475 A JP2014502475 A JP 2014502475A JP 5997758 B2 JP5997758 B2 JP 5997758B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Description
上記製造方法で使用される離型性基板41の種類は、特に制限されない。離型性基板としては、例えば、少なくとも1つの表面が導電性パターンと接着剤層または表面層と適切な剥離特性を示し、また上記表面が優れた平滑度を有する通常のフィルムまたはシートが使用されることができる。
1.表面粗度の測定
基板の平坦面の表面粗度は、AFM機器(モデル名:D3100、製造社:DigitalInstrument)を使用してタップピングモード(tapping mode)で測定し、使用されたチップの半径は、8nmであった。基板に対して面積が100μm2の領域を任意的に3箇所指定した後、指定された領域に対して上記方式で表面粗度を測定した。下記表1には、測定結果の平均値を記載した。図9は、実施例1の基板の表面粗度を測定する写真を示す。
基板の平坦面の表面抵抗は、表面抵抗測定時に通常的に使用される4ポイントプローブ(機器名:MCP−T610、製造社:MITSUBISHI CHEMICAL)を使用し、ピン間の間隔が5mmであるESPタイプのプローブを利用して測定した。
有機発光素子を20mAの定電流駆動条件の下で駆動させ、抽出される光の照度を測定し、光抽出効率を評価した。照度の測定時には、積分球を利用して素子から放出される光の量を測定した。
プライマー処理されていないPET(poly(ethylene terephthalate))フィルムの表面にAgペーストを利用してオフセットグラビアプリンティング方式で格子型の導電性パターンを印刷した。この過程で導電性パターンの線幅は20μm、線間の間隔は280μmに調節し、導電性パターンの高さは約1μmに調節した。その後、印刷した導電性パターンを150℃の温度で約30分間維持させて、上記パターンを焼成した。次いで、導電性パターンが形成されたPETフィルムの面に紫外線硬化型接着剤組成物(NOA65、Norland Products Inc.)を塗布した後、その上部にガラス基材をラミネートし、ゴムローラーで圧力を印加し、上記組成物が十分に広がるようにした。その後、上記組成物に紫外線を照射(2J/cm2)し、接着剤層を形成した。接着剤層の形成後に、上記PETフィルムを剥離し、有機電子素子用基板を製造した。図7及び図8は、製造された基板の写真を示す。
導電性パターンの形成時に線幅は40μm、線間の間隔は260μmに調節し、高さは、約2μmに調節したことを除いて、実施例1と同一の方式で基板を製造した。
プライマー処理されていないPET(poly(ethylene terephthalate))フィルムの表面にAgペーストを利用してオフセットグラビアプリンティング方式で格子型の導電性パターンを印刷した。この過程で導電性パターンの線幅は20μm、線間の間隔は280μmに調節し、導電性パターンの高さは約1μmに調節した。その後、印刷した導電性パターンを150℃の温度で約30分間維持させて、上記パターンを焼成した。次いで、導電性パターンが形成されたPETフィルムの面に表面層を形成するためのコーティング液(TYT−80−01、Toyo ink)を塗布した後、100℃の温度で約10分間乾燥し、紫外線を照射して硬化させることによって、表面層を形成した。その後、導電性パターンと表面層が形成された基板に紫外線硬化型接着剤組成物(NOA65、Norland Products Inc.)を塗布した後、ガラス基材をラミネートし、ゴムローラーで圧力を印加し、上記組成物が十分に広がるようにした。その後、上記組成物に紫外線を照射(2J/cm2)し、接着剤層を形成した後、上記PETフィルムを剥離し、有機電子素子用基板を製造した。
紫外線硬化型接着剤10gに対して屈折率が約1.52の高分子ビーズ(XX75BQ、直径3μm、Sekisui社製)を1gの比率で混合したことを除いて、実施例1と同一の方法で有機電子素子用基板を製造した。
紫外線硬化型接着剤に添加したビーズの量が1.5gであることを除いて、実施例4と同一の方法で有機電子素子用基板を製造した。
PET(poly(ethylene terephthatle))フィルムの表面上に導電性パターンを印刷しないことを除いて、 実施例1と同一の方法で有機電子素子用基板を製造した。
11:基材
12:接着剤層
13:導電性パターン
21:表面層
41:離型性基板
42:導電性パターン
43:接着剤層の前駆物質
44:接着剤層
45:基材
51:表面層
Claims (10)
- 離型性基板の離型表面に導電性パターンを形成する段階と、
上記導電性パターンが形成された上記離型性基板上に接着剤層の前駆物質を形成する段階と、
上記接着剤層の上記前駆物質と基材とをラミネートし、上記前駆物質を上記接着剤層に転換させる段階と、
上記離型性基板を除去して平坦面を形成する段階と、
上記平坦面の上部に有機電子素子を形成する段階と
を含み、
上記接着剤層に高屈折特性を示す微粒子を分散させて上記接着剤層の屈折率と上記平坦面の上部に形成される有機電子素子の屈折率の差の絶対値を1以下にする、有機電子装置の製造方法。 - 上記導電性パターンは、導電性ペーストまたはインクを上記離型性基板の上記離型表面に印刷する方式で形成する、請求項1に記載の有機電子装置の製造方法。
- 上記印刷する方式がスクリーン印刷、インクジェット印刷、オフセット印刷、グラビア印刷またはリバースグラビア印刷である、請求項2に記載の有機電子装置の製造方法。
- 上記導電性パターンが形成された上記離型性基板上に上記接着剤層の上記前駆物質を形成する段階で、
上記接着剤層の上記前駆物質は、上記接着剤層とは異なる屈折率を有する散乱粒子を含む、請求項1から3のいずれか一項に記載の有機電子装置の製造方法。 - 上記接着剤層の上記前駆物質を形成する前に上記離型性基板の上記離型表面に表面層を形成する段階をさらに行う、請求項1から4のいずれか一項に記載の有機電子装置の製造方法。
- 上記表面層は、ポリエステル、アクリル樹脂、PES(poly(ether sulfide))、ウレタン樹脂、エポキシ樹脂、オレフィン樹脂、PS(polysulfone)またはポリイミドを含む、請求項5に記載の有機電子装置の製造方法。
- 上記表面層は、酸化ケイ素、窒化ケイ素またはFeOを含む、請求項5に記載の有機電子装置の製造方法。
- 上記表面層は、伝導性物質よりなるかまたは伝導性物質を含む導電性表面層である、請求項5に記載の有機電子装置の製造方法。
- 上記伝導性物質が、ポリチオフェン系ポリマー、ポリアセチレン、ポリピロール、ポリアニリン、ポリフルオレン、ポリテトラチアフルバレン、ポリナフタレン、ポリ(p−フェニレンスルフィド)またはポリ(パラ−フェニレンビニレン)である伝導性ポリマー、または銀、アルミニウム、銅、パラジウム、クロム、白金または金である金属物質、またはAg、Au、Pd、Al、Pt、Cu、Zn、Cd、In、Si、Zr、Mo、Ni、Cr、Mg、Mn、Co及びSnよりなる群から選択された1つ以上でドーピングされるか、またはAg、Au、Pd、Al、Pt、Cu、Zn、Cd、In、Si、Zr、Mo、Ni、Cr、Mg、Mn、Co及びSnよりなる群から選択された1つ以上との合金である銀、アルミニウム、銅、パラジウム、クロム、白金または金、または炭素ナノチューブである、請求項8に記載の有機電子装置の製造方法。
- 上記接着剤層の屈折率は、1.7以上である、請求項1から9のいずれか一項に記載の有機電子装置の製造方法。
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