JP5991729B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP5991729B2
JP5991729B2 JP2011223456A JP2011223456A JP5991729B2 JP 5991729 B2 JP5991729 B2 JP 5991729B2 JP 2011223456 A JP2011223456 A JP 2011223456A JP 2011223456 A JP2011223456 A JP 2011223456A JP 5991729 B2 JP5991729 B2 JP 5991729B2
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JP
Japan
Prior art keywords
insulating film
region
etching
state imaging
imaging device
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Expired - Fee Related
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JP2011223456A
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English (en)
Japanese (ja)
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JP2013084753A5 (https=
JP2013084753A (ja
Inventor
愛子 加藤
愛子 加藤
剛士 岡部
剛士 岡部
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011223456A priority Critical patent/JP5991729B2/ja
Priority to US13/626,525 priority patent/US8802478B2/en
Publication of JP2013084753A publication Critical patent/JP2013084753A/ja
Publication of JP2013084753A5 publication Critical patent/JP2013084753A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2011223456A 2011-10-07 2011-10-07 固体撮像装置の製造方法 Expired - Fee Related JP5991729B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011223456A JP5991729B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法
US13/626,525 US8802478B2 (en) 2011-10-07 2012-09-25 Method for manufacturing semiconductor device and method for manufacturing solid state image sensor using multiple insulation films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011223456A JP5991729B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013084753A JP2013084753A (ja) 2013-05-09
JP2013084753A5 JP2013084753A5 (https=) 2014-11-13
JP5991729B2 true JP5991729B2 (ja) 2016-09-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011223456A Expired - Fee Related JP5991729B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US8802478B2 (https=)
JP (1) JP5991729B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6274729B2 (ja) * 2013-02-04 2018-02-07 キヤノン株式会社 固体撮像装置およびカメラ
CN103633106B (zh) * 2013-11-28 2016-06-29 上海华力微电子有限公司 Cmos感光器件接触孔刻蚀方法及cmos感光器件制造方法
JP2015109342A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 撮像装置の製造方法
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法
US9608033B2 (en) * 2014-05-12 2017-03-28 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2016058599A (ja) * 2014-09-11 2016-04-21 キヤノン株式会社 撮像装置の製造方法
JP6808481B2 (ja) * 2016-12-27 2021-01-06 キヤノン株式会社 半導体装置、システム、および、半導体装置の製造方法
JP6664353B2 (ja) * 2017-07-11 2020-03-13 キヤノン株式会社 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法
CN110047862B (zh) * 2019-04-29 2021-04-30 上海华力微电子有限公司 Cmos图像传感器的形成方法
JP2021111692A (ja) 2020-01-10 2021-08-02 パナソニックＩｐマネジメント株式会社 撮像装置および撮像装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4190760B2 (ja) 1995-01-31 2008-12-03 富士通マイクロエレクトロニクス株式会社 半導体装置
US6744091B1 (en) 1995-01-31 2004-06-01 Fujitsu Limited Semiconductor storage device with self-aligned opening and method for fabricating the same
JP3623834B2 (ja) 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
US6335552B1 (en) 1995-01-31 2002-01-01 Fujitsu Limited Semiconductor device and method for fabricating the same
US5763910A (en) 1995-01-31 1998-06-09 Fujitsu Limited Semiconductor device having a through-hole formed on diffused layer by self-alignment
US6214658B1 (en) * 1996-12-09 2001-04-10 Texas Instruments Incorporated Self-aligned contact structure and method
KR100479208B1 (ko) * 2002-10-23 2005-03-28 매그나칩 반도체 유한회사 살리사이드 공정을 이용한 이미지센서의 제조 방법
JP2004228425A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp Ｃｍｏｓイメージセンサの製造方法
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP2005340475A (ja) * 2004-05-26 2005-12-08 Sony Corp 固体撮像装置
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
JP2007165864A (ja) 2005-11-15 2007-06-28 Canon Inc 光電変換装置、光電変換装置の製造方法及び撮像システム
US20070108546A1 (en) 2005-11-15 2007-05-17 Canon Kabushiki Kaisha Photoelectric converter and imaging system including the same
JP5548332B2 (ja) * 2006-08-24 2014-07-16 富士通セミコンダクター株式会社 半導体デバイスの製造方法
JP2008210893A (ja) * 2007-02-23 2008-09-11 Fujitsu Ltd 半導体装置とその製造方法
JP2008227357A (ja) * 2007-03-15 2008-09-25 Sony Corp 固体撮像装置及びその製造方法
JP2010040634A (ja) 2008-08-01 2010-02-18 Renesas Technology Corp 半導体装置およびその製造方法
JP5446281B2 (ja) * 2008-08-01 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP2010165907A (ja) * 2009-01-16 2010-07-29 Panasonic Corp 半導体装置の製造方法
JP2010212365A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5558916B2 (ja) 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法

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US20130089947A1 (en) 2013-04-11
US8802478B2 (en) 2014-08-12
JP2013084753A (ja) 2013-05-09

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