JP5990255B2 - 凹部終端構造及び凹部終端構造を含む電子デバイスを製作する方法 - Google Patents
凹部終端構造及び凹部終端構造を含む電子デバイスを製作する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 11
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- 229910010271 silicon carbide Inorganic materials 0.000 description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 33
- 239000000758 substrate Substances 0.000 description 18
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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Description
すなわち、アバランシェ定格は、デバイスの降伏電圧(VBR)掛けるデバイスの逆方向定格電流(IR)掛けるデバイス故障が生じる電流パルスの最低持続時間(tpulse)割るデバイスの活性領域の面積に等しい。
138 ガードリング
148 凹部領域
150 エッジ終端構造
155 活性領域
Claims (12)
- 電子デバイスであって、
ドリフト領域と、
前記ドリフト領域の表面上のショットキー接点と、
前記ショットキー接点に隣接する前記ドリフト領域内のエッジ終端と、
を含み、
前記エッジ終端は、前記ドリフト領域の前記表面から距離dだけ窪んだ凹部領域と該凹部領域内のエッジ終端構造とを含み、
前記エッジ終端構造は、前記凹部領域内に複数のフローティングガードリングを含み、
前記ショットキー接点の下で前記ドリフト領域の前記表面は、上層フローティングガードリングを含み、前記凹部領域の表面は、複数の下層フローティングガードリングを含み、前記上層フローティングガードリング及び前記複数の下層フローティングガードリングは、前記ドリフト領域の第1の導電型と逆の第2の導電型を有し、前記複数の下層フローティングガードリングは、前記ショットキー接点によって定められた活性領域を取り囲み、互いに電気的に分離された第2の導電型のリングを含む、
ことを特徴とする電子デバイス。 - 前記ドリフト領域の前記表面上で前記ショットキー接点と接触する複数のドープ領域を更に含み、
前記ドリフト領域は、第1の導電型を有し、前記複数のドープ領域は、該第1の導電型と逆の第2の導電型を有する、
ことを特徴とする請求項1に記載の電子デバイス。 - 前記エッジ終端構造は、前記ショットキー接点によって定められた活性領域に隣接する前記凹部領域の表面で第1のフローティングガードリング及び第2のフローティングガードリングを含み、
前記エッジ終端構造は、前記第1のフローティングガードリングと前記第2のフローティングガードリング間の前記凹部領域の表面で低ドープ領域を更に含み、
前記低ドープ領域、前記第1のフローティングガードリング及び第2のフローティングガードリングは、前記ドリフト領域の第1の導電性と逆の第2の導電性を有する、
ことを特徴とする請求項1に記載の電子デバイス。 - 活性領域と前記凹部領域の間の前記ドリフト領域に側壁を更に含み、
前記フローティングガードリングは、前記ショットキー接点に隣接して前記側壁の基部に位置付けられる、
ことを特徴とする請求項1に記載の電子デバイス。 - 前記距離dは、前記ドリフト領域の前記表面から該ドリフト領域内への接合障壁ショットキー領域の深さよりも大きいことを特徴とする請求項2に記載の電子デバイス。
- 半導体デバイスを形成する方法であって、
半導体層を与える段階と、
前記半導体層に該半導体層内のメサを定める凹部領域を与える段階であって、該メサが、該凹部領域の床面から垂直方向にオフセットされた水平メサ表面を含む前記凹部領域を与える段階と、
前記凹部領域に、該凹部領域の表面に複数のフローティングガードリングを含む接合終端構造を与える段階であって、前記複数のフローティングガードリングは、前記半導体層の第1の導電型と逆の第2の導電型を有し、前記複数のフローティングガードリングは、前記メサを取り囲み、互いに電気的に分離された第2の導電型のリングを含む、段階と、
前記水平メサ表面上に金属接点を与える段階と、
を含むことを特徴とする方法。 - 前記接合終端構造を与える段階は、前記半導体層の前記凹部領域内にドーパントイオンを注入して該半導体層の該凹部領域の表面で低ドープ領域を形成する段階を含むことを特徴とする請求項6に記載の方法。
- 前記接合終端構造を与える段階は、前記半導体層の前記凹部領域に、第1のフローティングガードリング及び第2のフローティングガードリングを形成する段階を更に含み、
前記第1のフローティングガードリング及び前記第2のフローティングガードリングは、前記低ドープ領域のドーパント濃度よりも高いドーパント濃度を有する、
ことを特徴とする請求項7に記載の方法。 - 前記メサ表面上に前記金属接点を与える段階の前に該メサ表面に隣接するドリフト層に複数の接合障壁領域を与える段階を更に含むことを特徴とする請求項6に記載の方法。
- 前記メサの床面が、前記メサ表面から約0.5ミクロンの距離だけ垂直に離間していることを特徴とする請求項6に記載の方法。
- 前記ショットキー接点と接触する前記ドリフト領域の前記表面において、上層フローティングガードリングを更に含み、
前記上層フローティングガードリングは、前記凹部領域内の前記複数のフローティングガードリングから電気的に分離される、
ことを特徴とする請求項1に記載の電子デバイス。 - 前記ショットキー接点と接触する前記ドリフト領域の前記表面において、上層ガードリングを更に含み、
前記上層フローティングガードリングは、前記凹部領域内の前記複数のフローティングガードリングから電気的に分離される、
ことを特徴とする請求項6に記載の方法。
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US13/080,126 US9318623B2 (en) | 2011-04-05 | 2011-04-05 | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US13/080,126 | 2011-04-05 | ||
PCT/US2012/032078 WO2012138697A1 (en) | 2011-04-05 | 2012-04-04 | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
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KR (1) | KR101658693B1 (ja) |
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JP2014530484A (ja) * | 2011-09-11 | 2014-11-17 | クリー インコーポレイテッドCree Inc. | ショットキー・ダイオード |
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US8912621B1 (en) * | 2011-07-11 | 2014-12-16 | Diodes Incorporated | Trench schottky devices |
ITMI20111416A1 (it) | 2011-07-28 | 2013-01-29 | St Microelectronics Srl | Circuito integrato dotato di almeno una antenna integrata |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US20140048903A1 (en) * | 2012-08-15 | 2014-02-20 | Avogy, Inc. | Method and system for edge termination in gan materials by selective area implantation doping |
US9318624B2 (en) * | 2012-11-27 | 2016-04-19 | Cree, Inc. | Schottky structure employing central implants between junction barrier elements |
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