JP5989985B2 - 埋没ジャンクションを有する垂直型トランジスタ及びその形成方法 - Google Patents
埋没ジャンクションを有する垂直型トランジスタ及びその形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 96
- 239000012535 impurity Substances 0.000 claims description 172
- 229910052785 arsenic Inorganic materials 0.000 claims description 65
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 64
- 229910052698 phosphorus Inorganic materials 0.000 claims description 62
- 239000011574 phosphorus Substances 0.000 claims description 61
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 46
- 229920005591 polysilicon Polymers 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 245
- 238000009792 diffusion process Methods 0.000 description 56
- 230000015572 biosynthetic process Effects 0.000 description 26
- 239000002019 doping agent Substances 0.000 description 18
- 238000000926 separation method Methods 0.000 description 14
- 238000004151 rapid thermal annealing Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- -1 boron ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 150000001495 arsenic compounds Chemical class 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
111 活性領域の壁体(wall body)
113 第1の側面
115 第2の側面
311、350、370 片側コンタクトマスクのためのライナー(liner)
410 開口部(opening)
510 埋没ジャンクション
511 第1の不純物層
513 第2の不純物層
600 埋没ビットライン
750 ゲート
Claims (13)
- 半導体基板に第1の側面に反対される第2の側面を有して突出した壁体(wall)を形成するステップと、
該壁体の第1の側面の一部を選択的に開口する開口部(opening)を有する片側コンタクトマスク(one side contact mask)を形成するステップと、
前記開口部に露出した前記第1の側面部分に互いに拡散度(diffusivity)が異なる不純物を拡散させて、第1の不純物層及び該第1の不純物層を覆う第2の不純物層を有する埋没ジャンクション(buried junction)を形成するステップと、
前記壁体間に埋没されて、前記片側コンタクトマスクの開口部を介して前記埋没ジャンクションに接触連結される埋没ビットライン(buried bit line)を形成するステップと、
を含み、
前記第1の不純物層及び前記第2の不純物層を形成するステップが、
前記片側コンタクトマスクの開口部に露出した前記第1の側面部分に接触するように、第2の不純物を有するドーピング媒介層を形成するステップと、
該ドーピング媒介層に前記第2の不純物に比べて拡散度(diffusivity)が低い第1の不純物をドーピング(doping)するステップと、
前記ドーピングされた第1の不純物及び第2の不純物を前記開口部に露出した前記第1の側面部分に拡散させる熱処理ステップと、
前記熱処理以降に前記ドーピング媒介層を選択的に除去して前記片側コンタクトマスクの開口部を露出させるステップと、
を含むことを特徴とする垂直型トランジスタの形成方法。 - 前記不純物が、ヒ素(As)及びリン(P)を有し、
前記リン(P)と前記ヒ素(As)との拡散度の差によって前記第1の不純物層が前記ヒ素(As)を有し、前記第2の不純物層が前記リン(P)を有して形成されることを特徴とする請求項1に記載の垂直型トランジスタの形成方法。 - 前記第2の不純物層が、
前記第1の不純物層の前記ヒ素(As)の濃度に比べて低い濃度で前記リン(P)を有することを特徴とする請求項2に記載の垂直型トランジスタの形成方法。 - 前記第2の不純物層が、
前記第2の側面と接することなく離隔するように、前記リン(P)が拡散されて形成されることを特徴とする請求項3に記載の垂直型トランジスタの形成方法。 - 前記ドーピング媒介層を形成するステップが、
前記壁体間に前記第2の不純物としてリン(P)がドーピング(doping)されたポリシリコン層を蒸着するステップと、
該ポリシリコン層を前記片側コンタクトマスクの開口部の上側部までエッチバック(etch back)するステップと、
前記エッチバックされたポリシリコン層に前記第1の不純物としてヒ素(As)をイオン注入(ion implantation)するステップと、
を含むことを特徴とする請求項1に記載の垂直型トランジスタの形成方法。 - 半導体基板に第1の側面に反対される第2の側面を有して突出した壁体(wall)を形成するステップと、
該壁体の第1の側面の一部を選択的に開口する開口部(opening)を有する片側コンタクトマスク(one side contact mask)を形成するステップと、
前記開口部に露出した前記第1の側面部分に互いに拡散度(diffusivity)が異なる不純物を拡散させて、第1の不純物層及び該第1の不純物層を覆う第2の不純物層を有する埋没ジャンクション(buried junction)を形成するステップと、
前記壁体間に埋没されて、前記片側コンタクトマスクの開口部を介して前記埋没ジャンクションに接触連結される埋没ビットライン(buried bit line)を形成するステップと、
を含み、
前記第1の不純物層及び前記第2の不純物層を形成するステップが、
前記片側コンタクトマスクの開口部に露出した前記第1の側面部分に接触するように拡散度(diffusivity)が互いに異なる第1の不純物及び第2の不純物を共に有するドーピング媒介層を形成するステップと、
前記ドーピングされた第1の不純物及び第2の不純物を前記開口部に露出した前記第1の側面部分に拡散させる熱処理ステップと、
前記熱処理以降に前記ドーピング媒介層を選択的に除去して前記片側コンタクトマスクの開口部を露出させるステップと、
を含むことを特徴とする垂直型トランジスタの形成方法。 - 前記ドーピング媒介層を形成するステップが、
前記第1の不純物及び前記第2の不純物の各々としてヒ素(As)及びリン(P)がドーピングされたポリシリコン層(As、Pdoped polysilicon)を蒸着するステップと、
前記ポリシリコン層を前記片側コンタクトマスクの開口部の上側部までエッチバック(etch back)するステップと、
を含むことを特徴とする請求項6に記載の垂直型トランジスタの形成方法。 - 前記ドーピング媒介層を形成するステップが、
前記壁体間を埋め込む非ドーピングされたポリシリコン(undoped polysillicon)層を蒸着するステップと、
前記ポリシリコン層を前記片側コンタクトマスクの開口部の上側部までエッチバック(etch back)するステップと、
前記ポリシリコン層にヒ素(As)及びリン(P)をイオン注入(ion implantation)するステップと、
を含むことを特徴とする請求項6に記載の垂直型トランジスタの形成方法。 - 前記片側コンタクトマスク(one side contact mask)を形成するステップが、
前記壁体(wall)の前記第1の側面及び前記第2の側面の下側部分を覆う第1のライナー(liner)及び上側部分を覆う第2のライナーを形成するステップと、
前記第2のライナーを覆い、前記第2のライナーに隣接する前記第1のライナーの一部を覆うように延長される第3のライナーを形成するステップと、
前記第3のライナー上に前記壁体間の部分を満たす犠牲層を形成するステップと、
前記第3のライナー及び前記犠牲層をリセス(recess)して前記第3のライナーの上端が底の角部に露出するトレンチを形成するステップと、
該トレンチの前記第1の側面に隣接した角部を選択的に露出するエッチングバリア(etching barrier)を形成するステップと、
該エッチングバリアによって露出する角部に位置する前記第3のライナー部分を除去して、前記犠牲層と前記壁体との間に溝を前記第1の側面に形成するステップと、
該溝に露出する前記第1のライナー部分を選択的に除去して、前記第1の側面の一部を開口する前記開口部を形成するステップと、
前記犠牲層及び前記第2の側面上に残留する前記第3のライナーを選択的に除去して残留する前記第1のライナー及び前記第2のライナーを有する前記片側コンタクトマスク(one side contact mask)を形成するステップと、
を含むことを特徴とする請求項6に記載の垂直型トランジスタの形成方法。 - 前記エッチングバリアを形成するステップが、
前記トレンチの側壁及び底に延長され、前記トレンチによって突出する前記壁体の上端部分を覆うポリシリコン層を形成するステップと、
前記トレンチの前記第2の側面に隣接した角部を覆う前記ポリシリコン層部分に選択的にイオン注入する傾斜イオン注入ステップと、
前記ポリシリコン層のイオン注入された部分を選択的に除去するステップと、
を含むことを特徴とする請求項9に記載の垂直型トランジスタの形成方法。 - 前記壁体を多数の活性ピラーに分割する分割トレンチ(trench)を前記埋没ビットラインに交差するように形成するステップと、
前記分割トレンチに露出した前記活性ピラーの側面にゲート誘電層を形成するステップと、
前記分割トレンチ内に前記埋没ビットラインに交差するゲートを形成するステップと、
前記活性ピラーの上部端部に第3の不純物層をドーピングして、前記埋没ジャンクションに対応する上側ジャンクションを形成するステップと、
を更に含むことを特徴とする請求項6に記載の垂直型トランジスタの形成方法。 - 前記ゲートに対して前記第2の不純物層が、前記ゲートに終端が一部重なるようにリン(P)が拡散されて形成され、
前記第1の不純物層が、前記ゲートに重なることなく離隔するようにヒ素(As)が拡散されて形成されることを特徴とする請求項11に記載の垂直型トランジスタの形成方法。 - 前記第1の不純物層が前記ゲートに重なることなく離隔するように、前記片側コンタクトマスクの開口部が、前記ゲートの下端より低い位置に位置するように形成されることを特徴とする請求項12に記載の垂直型トランジスタの形成方法。
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