JP5988941B2 - 有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物 - Google Patents

有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物 Download PDF

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JP5988941B2
JP5988941B2 JP2013192216A JP2013192216A JP5988941B2 JP 5988941 B2 JP5988941 B2 JP 5988941B2 JP 2013192216 A JP2013192216 A JP 2013192216A JP 2013192216 A JP2013192216 A JP 2013192216A JP 5988941 B2 JP5988941 B2 JP 5988941B2
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group
copper complex
thin film
carbon atoms
copper
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JP2013192216A
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Japanese (ja)
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JP2014076987A (ja
Inventor
真宏 高田
真宏 高田
由夫 稲垣
由夫 稲垣
亮 浜崎
亮 浜崎
野村 公篤
公篤 野村
田中 淳
淳 田中
鈴木 真之
真之 鈴木
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2013192216A priority Critical patent/JP5988941B2/ja
Priority to TW102133940A priority patent/TW201412753A/zh
Priority to PCT/JP2013/075325 priority patent/WO2014046193A1/ja
Priority to KR1020157006812A priority patent/KR101748050B1/ko
Publication of JP2014076987A publication Critical patent/JP2014076987A/ja
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D319/00Heterocyclic compounds containing six-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D319/041,3-Dioxanes; Hydrogenated 1,3-dioxanes
    • C07D319/061,3-Dioxanes; Hydrogenated 1,3-dioxanes not condensed with other rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Heterocyclic Compounds That Contain Two Or More Ring Oxygen Atoms (AREA)
JP2013192216A 2012-09-20 2013-09-17 有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物 Active JP5988941B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013192216A JP5988941B2 (ja) 2012-09-20 2013-09-17 有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物
TW102133940A TW201412753A (zh) 2012-09-20 2013-09-18 有機銅錯合物、有機銅錯合物溶液、銅氧化物薄膜、銅氧化物薄膜的製造方法以及化合物
PCT/JP2013/075325 WO2014046193A1 (ja) 2012-09-20 2013-09-19 有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物
KR1020157006812A KR101748050B1 (ko) 2012-09-20 2013-09-19 유기 동 착물, 유기 동 착물 용액, 동 산화물 박막, 동 산화물 박막의 제조 방법, 및, 화합물

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012207255 2012-09-20
JP2012207255 2012-09-20
JP2013192216A JP5988941B2 (ja) 2012-09-20 2013-09-17 有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物

Publications (2)

Publication Number Publication Date
JP2014076987A JP2014076987A (ja) 2014-05-01
JP5988941B2 true JP5988941B2 (ja) 2016-09-07

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JP2013192216A Active JP5988941B2 (ja) 2012-09-20 2013-09-17 有機銅錯体、有機銅錯体溶液、銅酸化物薄膜、銅酸化物薄膜の製造方法、および、化合物

Country Status (4)

Country Link
JP (1) JP5988941B2 (ko)
KR (1) KR101748050B1 (ko)
TW (1) TW201412753A (ko)
WO (1) WO2014046193A1 (ko)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT8026945A0 (it) * 1980-12-24 1980-12-24 Isf Spa Chetoidrossiimminocefalosporine.
US6500797B1 (en) * 1997-09-29 2002-12-31 The Procter & Gamble Company Process for preparing β-ketoester fragrance pro-accords from 1,3-dioxan-4,6-diones
US6451746B1 (en) * 2000-11-03 2002-09-17 Chemlink Laboratories, Llc Carrier for liquid ingredients to be used in effervescent products
KR100402047B1 (ko) * 2001-05-25 2003-10-17 삼성정밀화학 주식회사 광학적으로 순수한 δ-히드록시-β-케토에스테르 유도체의제조방법
NZ541232A (en) * 2003-01-09 2008-02-29 Astellas Pharma Inc Pyrrolopyridazine derivatives
JP2005173198A (ja) * 2003-12-11 2005-06-30 Konica Minolta Medical & Graphic Inc 熱現像写真感光材料及びその画像形成方法
JP5452196B2 (ja) * 2009-12-03 2014-03-26 株式会社Tftech p型半導体の性能を持つ酸化銅(I)膜の製造方法および該膜作成用の溶液の製造方法

Also Published As

Publication number Publication date
KR20150043489A (ko) 2015-04-22
TW201412753A (zh) 2014-04-01
WO2014046193A1 (ja) 2014-03-27
KR101748050B1 (ko) 2017-06-15
JP2014076987A (ja) 2014-05-01

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