JP5976030B2 - シリコンウェーハの熱処理方法 - Google Patents
シリコンウェーハの熱処理方法 Download PDFInfo
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- JP5976030B2 JP5976030B2 JP2014082050A JP2014082050A JP5976030B2 JP 5976030 B2 JP5976030 B2 JP 5976030B2 JP 2014082050 A JP2014082050 A JP 2014082050A JP 2014082050 A JP2014082050 A JP 2014082050A JP 5976030 B2 JP5976030 B2 JP 5976030B2
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- wafer
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- oxidizing atmosphere
- heat
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- 238000010438 heat treatment Methods 0.000 title claims description 182
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 96
- 229910052710 silicon Inorganic materials 0.000 title claims description 48
- 239000010703 silicon Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 22
- 230000001590 oxidative effect Effects 0.000 claims description 67
- 238000001816 cooling Methods 0.000 claims description 49
- 230000007547 defect Effects 0.000 claims description 33
- 230000014759 maintenance of location Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 237
- 201000006935 Becker muscular dystrophy Diseases 0.000 description 115
- 208000037663 Best vitelliform macular dystrophy Diseases 0.000 description 115
- 208000020938 vitelliform macular dystrophy 2 Diseases 0.000 description 115
- 229910052760 oxygen Inorganic materials 0.000 description 90
- 239000001301 oxygen Substances 0.000 description 88
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 85
- 239000013078 crystal Substances 0.000 description 64
- 239000002344 surface layer Substances 0.000 description 57
- 239000002244 precipitate Substances 0.000 description 28
- 238000009826 distribution Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 21
- 238000005498 polishing Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 238000001556 precipitation Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 238000005247 gettering Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 208000032750 Device leakage Diseases 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002926 oxygen Chemical class 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
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- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- FSIRXIHZBIXHKT-MHTVFEQDSA-N edatrexate Chemical compound C=1N=C2N=C(N)N=C(N)C2=NC=1CC(CC)C1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 FSIRXIHZBIXHKT-MHTVFEQDSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014082050A JP5976030B2 (ja) | 2014-04-11 | 2014-04-11 | シリコンウェーハの熱処理方法 |
| KR1020150049712A KR101829505B1 (ko) | 2014-04-11 | 2015-04-08 | 실리콘 웨이퍼의 열처리 방법, 및 실리콘 웨이퍼 |
| CN201510167489.6A CN104979191B (zh) | 2014-04-11 | 2015-04-10 | 硅晶片的热处理方法和硅晶片 |
| TW104111696A TWI591726B (zh) | 2014-04-11 | 2015-04-10 | Silicon wafer heat treatment methods, and silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014082050A JP5976030B2 (ja) | 2014-04-11 | 2014-04-11 | シリコンウェーハの熱処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015204326A JP2015204326A (ja) | 2015-11-16 |
| JP5976030B2 true JP5976030B2 (ja) | 2016-08-23 |
Family
ID=54275590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014082050A Active JP5976030B2 (ja) | 2014-04-11 | 2014-04-11 | シリコンウェーハの熱処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5976030B2 (ko) |
| KR (1) | KR101829505B1 (ko) |
| CN (1) | CN104979191B (ko) |
| TW (1) | TWI591726B (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154354B (zh) * | 2016-03-03 | 2020-12-11 | 上海新昇半导体科技有限公司 | 晶圆热处理的方法 |
| JP6558308B2 (ja) * | 2016-06-08 | 2019-08-14 | 信越半導体株式会社 | シリコンウェーハの高感度欠陥評価方法およびシリコン単結晶の製造方法 |
| US9899297B1 (en) * | 2016-09-30 | 2018-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having a through-silicon via and manufacturing method thereof |
| DE102017219255A1 (de) | 2017-10-26 | 2019-05-02 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium |
| JP6978928B2 (ja) * | 2017-12-25 | 2021-12-08 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの評価方法 |
| DE102018203945B4 (de) * | 2018-03-15 | 2023-08-10 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben |
| JP7051560B2 (ja) * | 2018-04-26 | 2022-04-11 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
| CN110965127A (zh) * | 2019-12-10 | 2020-04-07 | 中国电子科技集团公司第四十六研究所 | 一种超薄硅单晶切片热处理强化工艺 |
| JP7519784B2 (ja) * | 2020-02-19 | 2024-07-22 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの製造方法 |
| CN112652532A (zh) * | 2020-12-22 | 2021-04-13 | 长江存储科技有限责任公司 | 半导体结构的形成方法 |
| CN114280072B (zh) * | 2021-12-23 | 2023-06-20 | 宁夏中欣晶圆半导体科技有限公司 | 单晶硅体内bmd的检测方法 |
| JP2024008390A (ja) * | 2022-07-08 | 2024-01-19 | 株式会社Sumco | シリコンウェーハ及びその製造方法 |
| CN118321755B (zh) * | 2024-06-13 | 2024-08-13 | 通威微电子有限公司 | 碳化硅激光冷裂方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275431A (ja) * | 1992-03-25 | 1993-10-22 | Mitsubishi Materials Corp | シリコンウェーハのｉｇ熱処理方法 |
| JP4385539B2 (ja) * | 2001-03-29 | 2009-12-16 | 株式会社Ｓｕｍｃｏ | シリコン単結晶ウェーハの熱処理方法 |
| US8476149B2 (en) * | 2008-07-31 | 2013-07-02 | Global Wafers Japan Co., Ltd. | Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process |
| JP2010040587A (ja) * | 2008-07-31 | 2010-02-18 | Covalent Materials Corp | シリコンウェーハの製造方法 |
| EP2421029A4 (en) * | 2009-04-13 | 2015-01-07 | Shinetsu Handotai Kk | ANNEAL WAFER, METHOD FOR MANUFACTURING ANNEAL WAFER, AND METHOD FOR MANUFACTURING DEVICE |
| JP5944643B2 (ja) * | 2011-09-28 | 2016-07-05 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
-
2014
- 2014-04-11 JP JP2014082050A patent/JP5976030B2/ja active Active
-
2015
- 2015-04-08 KR KR1020150049712A patent/KR101829505B1/ko active IP Right Grant
- 2015-04-10 TW TW104111696A patent/TWI591726B/zh active
- 2015-04-10 CN CN201510167489.6A patent/CN104979191B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201546902A (zh) | 2015-12-16 |
| TWI591726B (zh) | 2017-07-11 |
| KR20150118037A (ko) | 2015-10-21 |
| CN104979191A (zh) | 2015-10-14 |
| JP2015204326A (ja) | 2015-11-16 |
| CN104979191B (zh) | 2018-04-03 |
| KR101829505B1 (ko) | 2018-02-14 |
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