JP5975617B2 - 固体撮像装置およびその製造方法ならびにカメラ - Google Patents

固体撮像装置およびその製造方法ならびにカメラ Download PDF

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Publication number
JP5975617B2
JP5975617B2 JP2011222348A JP2011222348A JP5975617B2 JP 5975617 B2 JP5975617 B2 JP 5975617B2 JP 2011222348 A JP2011222348 A JP 2011222348A JP 2011222348 A JP2011222348 A JP 2011222348A JP 5975617 B2 JP5975617 B2 JP 5975617B2
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Japan
Prior art keywords
silicon nitride
nitride film
film
imaging device
solid
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Expired - Fee Related
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JP2011222348A
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English (en)
Japanese (ja)
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JP2013084693A (ja
JP2013084693A5 (enExample
Inventor
敏弘 庄山
敏弘 庄山
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011222348A priority Critical patent/JP5975617B2/ja
Priority to US13/625,663 priority patent/US8982254B2/en
Priority to CN201210375335.2A priority patent/CN103107176B/zh
Publication of JP2013084693A publication Critical patent/JP2013084693A/ja
Publication of JP2013084693A5 publication Critical patent/JP2013084693A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011222348A 2011-10-06 2011-10-06 固体撮像装置およびその製造方法ならびにカメラ Expired - Fee Related JP5975617B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011222348A JP5975617B2 (ja) 2011-10-06 2011-10-06 固体撮像装置およびその製造方法ならびにカメラ
US13/625,663 US8982254B2 (en) 2011-10-06 2012-09-24 Solid-state image sensor and manufacturing method thereof, and camera
CN201210375335.2A CN103107176B (zh) 2011-10-06 2012-09-29 固态图像传感器及其制造方法以及照相机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011222348A JP5975617B2 (ja) 2011-10-06 2011-10-06 固体撮像装置およびその製造方法ならびにカメラ

Publications (3)

Publication Number Publication Date
JP2013084693A JP2013084693A (ja) 2013-05-09
JP2013084693A5 JP2013084693A5 (enExample) 2014-11-06
JP5975617B2 true JP5975617B2 (ja) 2016-08-23

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JP2011222348A Expired - Fee Related JP5975617B2 (ja) 2011-10-06 2011-10-06 固体撮像装置およびその製造方法ならびにカメラ

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Country Link
US (1) US8982254B2 (enExample)
JP (1) JP5975617B2 (enExample)
CN (1) CN103107176B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6282109B2 (ja) 2013-12-26 2018-02-21 キヤノン株式会社 撮像装置の製造方法および撮像装置
JP2015177034A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP6325904B2 (ja) * 2014-06-02 2018-05-16 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、および、カメラ
JP6579756B2 (ja) * 2015-02-10 2019-09-25 キヤノン株式会社 固体撮像素子およびそれを用いた撮像装置
JP2017183668A (ja) * 2016-03-31 2017-10-05 キヤノン株式会社 固体撮像装置の製造方法
JP2019029448A (ja) 2017-07-27 2019-02-21 キヤノン株式会社 撮像装置、カメラおよび撮像装置の製造方法
JP7076971B2 (ja) 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
EP3540775B1 (en) 2018-03-12 2020-10-28 Canon Kabushiki Kaisha Imaging device, method of manufacturing the same, and apparatus
JP6781745B2 (ja) * 2018-03-12 2020-11-04 キヤノン株式会社 撮像装置の製造方法
JP6630392B2 (ja) * 2018-04-16 2020-01-15 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、および、カメラ
JP7458432B2 (ja) * 2022-03-09 2024-03-29 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JP4987796B2 (ja) * 1999-01-08 2012-07-25 株式会社東芝 半導体装置の製造方法
JP2001168092A (ja) * 1999-01-08 2001-06-22 Toshiba Corp 半導体装置およびその製造方法
CN1722433A (zh) 1999-07-08 2006-01-18 株式会社日立制作所 半导体器件及其制造方法
JP2003197939A (ja) 2001-12-25 2003-07-11 Mitsubishi Heavy Ind Ltd 太陽電池用シリコン膜、シリコン太陽電池及びその製造方法
KR20110015473A (ko) * 2002-12-13 2011-02-15 소니 주식회사 고체 촬상 소자 및 그 제조방법
JP4427949B2 (ja) * 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
JP4117545B2 (ja) 2002-12-25 2008-07-16 ソニー株式会社 固体撮像素子及びその製造方法
JP4342429B2 (ja) 2004-02-09 2009-10-14 株式会社東芝 半導体装置の製造方法
US7001844B2 (en) 2004-04-30 2006-02-21 International Business Machines Corporation Material for contact etch layer to enhance device performance
US20070108546A1 (en) * 2005-11-15 2007-05-17 Canon Kabushiki Kaisha Photoelectric converter and imaging system including the same
JP2007165864A (ja) * 2005-11-15 2007-06-28 Canon Inc 光電変換装置、光電変換装置の製造方法及び撮像システム
JP4242880B2 (ja) * 2006-05-17 2009-03-25 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその動作方法
US7505206B2 (en) * 2006-07-10 2009-03-17 Taiwan Semiconductor Manufacturing Company Microlens structure for improved CMOS image sensor sensitivity
JP2008091771A (ja) * 2006-10-04 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2008166518A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 不揮発性半導体記憶装置
JP5186776B2 (ja) * 2007-02-22 2013-04-24 富士通株式会社 半導体装置及びその製造方法
JP5368070B2 (ja) * 2008-05-08 2013-12-18 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
JP2010205843A (ja) * 2009-03-02 2010-09-16 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP2011082399A (ja) * 2009-10-08 2011-04-21 Sharp Corp 固体撮像素子およびその製造方法、半導体装置およびその製造方法、並びに電子情報機器
JP2011146631A (ja) * 2010-01-18 2011-07-28 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
CN103107176A (zh) 2013-05-15
CN103107176B (zh) 2015-08-12
US8982254B2 (en) 2015-03-17
JP2013084693A (ja) 2013-05-09
US20130088626A1 (en) 2013-04-11

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