CN103107176B - 固态图像传感器及其制造方法以及照相机 - Google Patents
固态图像传感器及其制造方法以及照相机 Download PDFInfo
- Publication number
- CN103107176B CN103107176B CN201210375335.2A CN201210375335A CN103107176B CN 103107176 B CN103107176 B CN 103107176B CN 201210375335 A CN201210375335 A CN 201210375335A CN 103107176 B CN103107176 B CN 103107176B
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- nitride film
- photoelectric conversion
- film
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000007787 solid Substances 0.000 title claims abstract 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 137
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 137
- 238000006243 chemical reaction Methods 0.000 claims abstract description 54
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 35
- 239000011229 interlayer Substances 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 22
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- FXNBHOMLWYQFSK-UHFFFAOYSA-N [SiH3][SiH3].Cl.Cl.Cl.Cl.Cl.Cl Chemical compound [SiH3][SiH3].Cl.Cl.Cl.Cl.Cl.Cl FXNBHOMLWYQFSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-222348 | 2011-10-06 | ||
| JP2011222348A JP5975617B2 (ja) | 2011-10-06 | 2011-10-06 | 固体撮像装置およびその製造方法ならびにカメラ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103107176A CN103107176A (zh) | 2013-05-15 |
| CN103107176B true CN103107176B (zh) | 2015-08-12 |
Family
ID=48041850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210375335.2A Expired - Fee Related CN103107176B (zh) | 2011-10-06 | 2012-09-29 | 固态图像传感器及其制造方法以及照相机 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8982254B2 (enExample) |
| JP (1) | JP5975617B2 (enExample) |
| CN (1) | CN103107176B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6282109B2 (ja) | 2013-12-26 | 2018-02-21 | キヤノン株式会社 | 撮像装置の製造方法および撮像装置 |
| JP2015177034A (ja) * | 2014-03-14 | 2015-10-05 | キヤノン株式会社 | 固体撮像装置、その製造方法、及びカメラ |
| JP6325904B2 (ja) * | 2014-06-02 | 2018-05-16 | キヤノン株式会社 | 固体撮像装置の製造方法、固体撮像装置、および、カメラ |
| JP6579756B2 (ja) * | 2015-02-10 | 2019-09-25 | キヤノン株式会社 | 固体撮像素子およびそれを用いた撮像装置 |
| JP2017183668A (ja) * | 2016-03-31 | 2017-10-05 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP2019029448A (ja) | 2017-07-27 | 2019-02-21 | キヤノン株式会社 | 撮像装置、カメラおよび撮像装置の製造方法 |
| JP7076971B2 (ja) | 2017-09-28 | 2022-05-30 | キヤノン株式会社 | 撮像装置およびその製造方法ならびに機器 |
| EP3540775B1 (en) | 2018-03-12 | 2020-10-28 | Canon Kabushiki Kaisha | Imaging device, method of manufacturing the same, and apparatus |
| JP6781745B2 (ja) * | 2018-03-12 | 2020-11-04 | キヤノン株式会社 | 撮像装置の製造方法 |
| JP6630392B2 (ja) * | 2018-04-16 | 2020-01-15 | キヤノン株式会社 | 固体撮像装置の製造方法、固体撮像装置、および、カメラ |
| JP7458432B2 (ja) * | 2022-03-09 | 2024-03-29 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722433A (zh) * | 1999-07-08 | 2006-01-18 | 株式会社日立制作所 | 半导体器件及其制造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4987796B2 (ja) * | 1999-01-08 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2001168092A (ja) * | 1999-01-08 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2003197939A (ja) | 2001-12-25 | 2003-07-11 | Mitsubishi Heavy Ind Ltd | 太陽電池用シリコン膜、シリコン太陽電池及びその製造方法 |
| KR20110015473A (ko) * | 2002-12-13 | 2011-02-15 | 소니 주식회사 | 고체 촬상 소자 및 그 제조방법 |
| JP4427949B2 (ja) * | 2002-12-13 | 2010-03-10 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP4117545B2 (ja) | 2002-12-25 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP4342429B2 (ja) | 2004-02-09 | 2009-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
| US7001844B2 (en) | 2004-04-30 | 2006-02-21 | International Business Machines Corporation | Material for contact etch layer to enhance device performance |
| US20070108546A1 (en) * | 2005-11-15 | 2007-05-17 | Canon Kabushiki Kaisha | Photoelectric converter and imaging system including the same |
| JP2007165864A (ja) * | 2005-11-15 | 2007-06-28 | Canon Inc | 光電変換装置、光電変換装置の製造方法及び撮像システム |
| JP4242880B2 (ja) * | 2006-05-17 | 2009-03-25 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置及びその動作方法 |
| US7505206B2 (en) * | 2006-07-10 | 2009-03-17 | Taiwan Semiconductor Manufacturing Company | Microlens structure for improved CMOS image sensor sensitivity |
| JP2008091771A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP2008166518A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP5186776B2 (ja) * | 2007-02-22 | 2013-04-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP5368070B2 (ja) * | 2008-05-08 | 2013-12-18 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
| JP2010205843A (ja) * | 2009-03-02 | 2010-09-16 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| JP2011082399A (ja) * | 2009-10-08 | 2011-04-21 | Sharp Corp | 固体撮像素子およびその製造方法、半導体装置およびその製造方法、並びに電子情報機器 |
| JP2011146631A (ja) * | 2010-01-18 | 2011-07-28 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
-
2011
- 2011-10-06 JP JP2011222348A patent/JP5975617B2/ja not_active Expired - Fee Related
-
2012
- 2012-09-24 US US13/625,663 patent/US8982254B2/en not_active Expired - Fee Related
- 2012-09-29 CN CN201210375335.2A patent/CN103107176B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722433A (zh) * | 1999-07-08 | 2006-01-18 | 株式会社日立制作所 | 半导体器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103107176A (zh) | 2013-05-15 |
| US8982254B2 (en) | 2015-03-17 |
| JP5975617B2 (ja) | 2016-08-23 |
| JP2013084693A (ja) | 2013-05-09 |
| US20130088626A1 (en) | 2013-04-11 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150812 |