JP5962843B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5962843B2 JP5962843B2 JP2015503051A JP2015503051A JP5962843B2 JP 5962843 B2 JP5962843 B2 JP 5962843B2 JP 2015503051 A JP2015503051 A JP 2015503051A JP 2015503051 A JP2015503051 A JP 2015503051A JP 5962843 B2 JP5962843 B2 JP 5962843B2
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000009792 diffusion process Methods 0.000 claims description 53
- 230000001360 synchronised effect Effects 0.000 claims description 30
- 230000015556 catabolic process Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 230000003071 parasitic effect Effects 0.000 description 43
- 238000010586 diagram Methods 0.000 description 27
- 239000002184 metal Substances 0.000 description 15
- 230000007257 malfunction Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
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Description
2 n+基板
3 n-エピタキシャル層
4a,4b,4c,4d,16 p-ウェル拡散領域
6b pソース領域
6c pドレイン領域
7b nドレイン領域
7c nソース領域
8 n-オフセット拡散領域
10c,12a,12c,G ゲート電極
13a,13b,13c,13d LOCOS領域
14a,14b,14c,15,17 金属配線
51 制御回路
52 縦型MOSFET(nチャネル型)
53 横型MOSFET(nチャネル型)
55 ボディダイオード
56 リニアソレノイド
57 電源端子
58,62 グランド端子
59 出力端子
63 寄生トランジスタ
64 横型MOSFET(pチャネル型)
64a 横型MOSFET(デプレッション型pチャネル)
66 抵抗
100,200,300 半導体装置
201,202,203 電流
I201,I202,I203 電流値
S ソース電極
D ドレイン電極
IL 還流電流
Claims (6)
- 同一半導体基板上に、
第1導電型の縦型MOSFETと、
第1導電型の横型MOSFETと、
前記第1導電型の縦型MOSFETおよび前記第1導電型の横型MOSFETを制御する回路を備え、
前記第1導電型の縦型MOSFETのドレインが電源端子に接続されており、
前記第1導電型の横型MOSFETのソースがグランド端子に接続されており、
前記第1導電型の縦型MOSFETのソースおよび前記第1導電型の横型MOSFETのドレインが出力端子に接続されて同期整流回路を構成している半導体装置であって、
前記出力端子と前記グランド端子の間に、前記第1導電型の横型MOSFETと並列に接続された第2導電型の横型MOSFETを備え、
前記第2導電型の横型MOSFETのドレインは前記第1導電型の横型MOSFETのソースと接続され、
前記第2導電型の横型MOSFETのバックゲートは前記第1導電型の横型MOSFETのソースと別電位であり、
前記第2導電型の横型MOSFETのゲートは前記第1導電型の横型MOSFETのソースと接続されていることを特徴とする半導体装置。 - 前記第1導電型の横型MOSFETのチャネル層が形成されるウェル拡散領域と、前記第2導電型の横型MOSFETのドレイン領域が形成されるウェル拡散領域とは、共通の拡散領域で形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記第1導電型の横型MOSFETのバックゲートコンタクト領域とソース拡散領域との間に、高抵抗領域が形成されていることを特徴とする請求項1または2に記載の半導体装置。
- 前記第1導電型の縦型MOSFETと前記第1導電型の横型MOSFETと前記第2導電型の横型MOSFETとは、同程度の耐圧をもつMOSFETで構成されていることを特徴とする請求項1〜3のいずれか一項に記載の半導体装置。
- 前記第1導電型の縦型MOSFETは、トレンチゲート型のMOSFETであることを特徴とする請求項1〜4のいずれか一項に記載の半導体装置。
- 前記第2導電型の横型MOSFETは、エンハンスメント型MOSFETまたはデプレッション型MOSFETであることを特徴とする請求項1〜5のいずれか一項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013040340 | 2013-03-01 | ||
JP2013040340 | 2013-03-01 | ||
PCT/JP2014/055084 WO2014133138A1 (ja) | 2013-03-01 | 2014-02-28 | 半導体装置 |
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JP5962843B2 true JP5962843B2 (ja) | 2016-08-03 |
JPWO2014133138A1 JPWO2014133138A1 (ja) | 2017-02-02 |
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JP (1) | JP5962843B2 (ja) |
CN (1) | CN104969342B (ja) |
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CN107785366B (zh) | 2016-08-31 | 2020-04-14 | 无锡华润上华科技有限公司 | 集成有结型场效应晶体管的器件及其制造方法 |
JP6740831B2 (ja) * | 2016-09-14 | 2020-08-19 | 富士電機株式会社 | 半導体装置 |
JP7297147B2 (ja) * | 2020-03-27 | 2023-06-23 | 三菱電機株式会社 | 半導体パワーモジュールおよび電力変換装置 |
IT202100024752A1 (it) * | 2021-09-28 | 2023-03-28 | St Microelectronics Srl | Dispositivo di potenza in carburo di silicio con resistenza integrata e relativo procedimento di fabbricazione |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008282999A (ja) * | 2007-05-10 | 2008-11-20 | Denso Corp | 半導体装置 |
JP2009124052A (ja) * | 2007-11-16 | 2009-06-04 | Denso Corp | Dc−dcコンバータ |
JP2009170747A (ja) * | 2008-01-18 | 2009-07-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2011254693A (ja) * | 2010-05-07 | 2011-12-15 | Fujitsu Semiconductor Ltd | Dcdc変換装置 |
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US5744994A (en) | 1996-05-15 | 1998-04-28 | Siliconix Incorporated | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp |
JP2001268899A (ja) * | 2000-03-17 | 2001-09-28 | Fujitsu Ltd | 電源制御装置、電源回路及び電源制御方法並びに電子機器 |
JP2005340624A (ja) | 2004-05-28 | 2005-12-08 | Fuji Electric Device Technology Co Ltd | 半導体集積回路装置 |
JP5297104B2 (ja) | 2008-07-01 | 2013-09-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4762274B2 (ja) * | 2008-07-16 | 2011-08-31 | 株式会社東芝 | 半導体装置 |
JP4995873B2 (ja) | 2009-08-05 | 2012-08-08 | 株式会社東芝 | 半導体装置及び電源回路 |
JP5315378B2 (ja) | 2011-05-23 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | Dc/dcコンバータ用半導体装置 |
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2014
- 2014-02-28 JP JP2015503051A patent/JP5962843B2/ja active Active
- 2014-02-28 DE DE112014001094.4T patent/DE112014001094B4/de active Active
- 2014-02-28 WO PCT/JP2014/055084 patent/WO2014133138A1/ja active Application Filing
- 2014-02-28 CN CN201480006722.6A patent/CN104969342B/zh not_active Expired - Fee Related
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008282999A (ja) * | 2007-05-10 | 2008-11-20 | Denso Corp | 半導体装置 |
JP2009124052A (ja) * | 2007-11-16 | 2009-06-04 | Denso Corp | Dc−dcコンバータ |
JP2009170747A (ja) * | 2008-01-18 | 2009-07-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2011254693A (ja) * | 2010-05-07 | 2011-12-15 | Fujitsu Semiconductor Ltd | Dcdc変換装置 |
Also Published As
Publication number | Publication date |
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CN104969342B (zh) | 2019-03-01 |
US9705488B2 (en) | 2017-07-11 |
DE112014001094T5 (de) | 2015-11-26 |
WO2014133138A1 (ja) | 2014-09-04 |
JPWO2014133138A1 (ja) | 2017-02-02 |
DE112014001094B4 (de) | 2022-10-27 |
US20150333748A1 (en) | 2015-11-19 |
CN104969342A (zh) | 2015-10-07 |
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