JP5960452B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP5960452B2
JP5960452B2 JP2012051937A JP2012051937A JP5960452B2 JP 5960452 B2 JP5960452 B2 JP 5960452B2 JP 2012051937 A JP2012051937 A JP 2012051937A JP 2012051937 A JP2012051937 A JP 2012051937A JP 5960452 B2 JP5960452 B2 JP 5960452B2
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JP
Japan
Prior art keywords
light emitting
layer
conductive
conductive layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012051937A
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English (en)
Japanese (ja)
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JP2013055318A (ja
JP2013055318A5 (enExample
Inventor
ジョン・ファニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2013055318A publication Critical patent/JP2013055318A/ja
Publication of JP2013055318A5 publication Critical patent/JP2013055318A5/ja
Application granted granted Critical
Publication of JP5960452B2 publication Critical patent/JP5960452B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2012051937A 2011-09-01 2012-03-08 発光素子 Active JP5960452B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0088636 2011-09-01
KR1020110088636A KR101830719B1 (ko) 2011-09-01 2011-09-01 발광 소자

Publications (3)

Publication Number Publication Date
JP2013055318A JP2013055318A (ja) 2013-03-21
JP2013055318A5 JP2013055318A5 (enExample) 2015-04-23
JP5960452B2 true JP5960452B2 (ja) 2016-08-02

Family

ID=45841327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012051937A Active JP5960452B2 (ja) 2011-09-01 2012-03-08 発光素子

Country Status (5)

Country Link
US (1) US8884506B2 (enExample)
EP (1) EP2565921B1 (enExample)
JP (1) JP5960452B2 (enExample)
KR (1) KR101830719B1 (enExample)
CN (1) CN102969426B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239311B2 (ja) * 2012-08-20 2017-11-29 エルジー イノテック カンパニー リミテッド 発光素子
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2015173177A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光素子
KR102212666B1 (ko) * 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
KR102237152B1 (ko) * 2015-02-23 2021-04-07 엘지이노텍 주식회사 발광소자 및 라이팅 유닛
TWI781193B (zh) * 2017-08-24 2022-10-21 日商索尼股份有限公司 發光模組、光源單元、光造形裝置
US11749790B2 (en) * 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
DE202019000909U1 (de) 2019-02-23 2019-04-05 Makram Abdalla Messgeräteeinheit mit einer Skala und einem Zeiger mit Grenzmomentkupplung

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
US8076680B2 (en) * 2005-03-11 2011-12-13 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR100599012B1 (ko) 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
US8643034B2 (en) * 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
TW200947652A (en) 2008-05-12 2009-11-16 Harvatek Corp Semiconductor chip package structure for achieving positive face electrical connection without using substrates and a wire-bonding process
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP5304662B2 (ja) * 2009-02-18 2013-10-02 日立電線株式会社 発光素子
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
US8390021B2 (en) * 2009-06-15 2013-03-05 Panasonic Corporation Semiconductor light-emitting device, light-emitting module, and illumination device
JP2011035017A (ja) * 2009-07-30 2011-02-17 Hitachi Cable Ltd 発光素子
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
US20120182738A1 (en) 2012-07-19
KR20130025232A (ko) 2013-03-11
EP2565921A1 (en) 2013-03-06
US8884506B2 (en) 2014-11-11
EP2565921B1 (en) 2018-08-15
JP2013055318A (ja) 2013-03-21
CN102969426A (zh) 2013-03-13
KR101830719B1 (ko) 2018-02-21
CN102969426B (zh) 2017-03-01

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