JP2013055318A - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP2013055318A JP2013055318A JP2012051937A JP2012051937A JP2013055318A JP 2013055318 A JP2013055318 A JP 2013055318A JP 2012051937 A JP2012051937 A JP 2012051937A JP 2012051937 A JP2012051937 A JP 2012051937A JP 2013055318 A JP2013055318 A JP 2013055318A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
【解決手段】本発明の一実施例に係る発光素子は、第1導電型半導体層、活性層及び第2導電型半導体層を有する複数の発光セルと、前記発光セル同士の間に位置する境界領域に区分される発光構造物と、前記複数の発光セルのそれぞれの上部に配置された第1電極と、前記複数の発光セルの下に配置された第1導電層と、前記第1導電層の下に配置された少なくとも一つの第2導電層と、前記第1導電層同士の間、及び前記第1導電層と前記少なくとも一つの第2導電層との間に配置された第1絶縁層と、前記第1電極と前記少なくとも一つの第2導電層とを接続させた接続電極とを備え、前記第2導電層と前記接続電極との接続により前記発光セルは互いに直列接続する。
【選択図】図2
Description
例えば、活性層114が量子井戸構造である場合、活性層114は、InxAlyGa1−x−yN(0≦x≦1、0≦y≦1、0≦x+y≦1)の組成式を有する井戸層と、InaAlbGa1−a−bN(0≦a≦1、0≦b≦1、0≦a+b≦1)の組成式を有する障壁層とを備える単一または多重量子井戸構造を有することができる。井戸層は、障壁層のエネルギーバンドギャップよりも小さいバンドギャップを有する物質から形成することができる。
発光構造物110は、第2導電型半導体層116の下に第3導電型半導体層(図示せず)をさらに備えることができ、第3導電型半導体層は、第2導電型半導体層116と反対の極性を有することができる。第1導電型半導体層112はN型半導体層とし、第2導電型半導体層116はP型半導体層とすることができ、よって、発光構造物110は、N−P接合、P−N接合、N−P−N接合及びP−N−P接合構造の少なくとも一つを有することができる。
オーミック層140は、発光セルP1〜Pn(例えば、n=9)のそれぞれの下に配置され、第2導電型半導体層116とオーミック接触する。オーミック層140は、第1導電層101から発光構造物110に電源を円滑に供給させる役割を果たす。例えば、オーミック層140は、In、Zn、Ag、Sn、Ni、及びPtの少なくとも一つを含むことができる。オーミック層140は、電流遮断層130の側面及び下面を覆うことができる。
ベースプレート401は、第1発光セルP1を除いた残りの発光セルP2〜Pn(例えば、n=9)のそれぞれに対応して第1絶縁層172と第2絶縁層174との間に配置され、ベースプレート401の一領域に接続電極122−1〜122−m(m>1の自然数)が電気的に接続することができる。
パッケージ胴体610は、一側領域にキャビティー(cavity)が形成されている構造を有する。ここで、キャビティーの側壁は傾斜するように形成されるとよい。パッケージ胴体610は、シリコンベースのウエハーレベルパッケージ(wafer level package)、シリコン基板、炭化ケイ素(SiC)、窒化アルミニウム(aluminum nitride)、AlNなどのように絶縁性または熱伝導度に優れた基板で形成でき、複数個の基板が積層されている構造でよい。実施例は、上述した胴体の材質、構造、及び形状に限定されない。
Claims (15)
- 第1導電型半導体層、活性層及び第2導電型半導体層を有する複数の発光セルと、前記発光セル同士の間に位置する境界領域とに区分される発光構造物と、
前記複数の発光セルのそれぞれの上部に配置された第1電極と、
前記複数の発光セルの下に配置された第1導電層と、
前記第1導電層の下に配置された少なくとも一つの第2導電層と、
前記第1導電層同士の間、及び前記第1導電層と前記少なくとも一つの第2導電層との間に配置された第1絶縁層と、
前記第1電極と前記少なくとも一つの第2導電層とを接続させた接続電極と
を備え、
前記少なくとも一つの第2導電層は、前記第1絶縁層を貫通して前記第1導電層のいずれか一つに接続する、発光素子。 - 前記少なくとも一つの第2導電層は、
前記発光セルのいずれか一つを除いた残りの発光セルのそれぞれに対応して、互いに隔たって配置されている、請求項1に記載の発光素子。 - 前記第1導電層は、
前記第2導電型半導体層の下に配置された反射層と、
前記反射層の下に配置された第1バリアー層と
を備える、請求項1に記載の発光素子。 - 前記第2導電層の下に配置され、前記第1導電層の前記いずれか一つと電気的に接続する第2バリアー層と、
前記第2導電層同士の間、及び前記第2バリアー層と前記第2導電層との間に配置された第2絶縁層と
をさらに備える、請求項3に記載の発光素子。 - 前記接続電極は、隣接する2個の発光セルのいずれか一方における第1電極と残り他方に対応する第2導電層とを電気的に接続させている、請求項1に記載の発光素子。
- 前記発光セルのそれぞれと前記接続電極との間に配置されたパシベーション層と、
前記境界領域に配置された保護層と
をさらに備える、請求項5に記載の発光素子。 - 前記接続電極は、前記パシベーション層の上に配置され、前記保護層及び前記第1絶縁層を貫通する、請求項6に記載の発光素子。
- 前記第1導電層のそれぞれは、前記複数の発光セルのそれぞれに対応して配置され、
前記第1導電層のいずれか一つは、前記複数の発光セルのうち対応するいずれか一つに電気的に接続する、請求項1に記載の発光素子。 - 前記第2導電層の一部分は、隣接する前記境界領域と垂直方向にオーバーラップする、請求項1に記載の発光素子。
- 前記残りの発光セルのいずれか一つの発光セルに対応して配置された第2導電層の少なくとも一部分は、前記いずれか一つの発光セルに隣接する他の発光セルと垂直方向にオーバーラップする、請求項9に記載の発光素子。
- 前記第2導電層のそれぞれは、
板状を有し、前記接続電極が接続するベースプレートと、
前記ベースプレートから突出し、前記第1絶縁層を貫通して前記対応する第1導電層に接続する貫通部と
を備える、請求項1に記載の発光素子。 - 前記貫通部のいずれか一辺の長さは、前記ベースプレートのいずれか一辺の長さと同一である、請求項11に記載の発光素子。
- 前記ベースプレートは、少なくとも一つの貫通孔を有する、請求項11に記載の発光素子。
- 前記ベースプレートの上面及び下面の少なくとも一面に、凸凹(roughness)が形成されている、請求項11に記載の発光素子。
- 前記第2導電層は反射物質で構成されている、請求項1に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110088636A KR101830719B1 (ko) | 2011-09-01 | 2011-09-01 | 발광 소자 |
KR10-2011-0088636 | 2011-09-01 |
Publications (3)
Publication Number | Publication Date |
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JP2013055318A true JP2013055318A (ja) | 2013-03-21 |
JP2013055318A5 JP2013055318A5 (ja) | 2015-04-23 |
JP5960452B2 JP5960452B2 (ja) | 2016-08-02 |
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Country Status (5)
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US (1) | US8884506B2 (ja) |
EP (1) | EP2565921B1 (ja) |
JP (1) | JP5960452B2 (ja) |
KR (1) | KR101830719B1 (ja) |
CN (1) | CN102969426B (ja) |
Cited By (1)
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KR20160102752A (ko) * | 2015-02-23 | 2016-08-31 | 엘지이노텍 주식회사 | 발광소자 및 라이팅 유닛 |
Families Citing this family (8)
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EP2701212B1 (en) * | 2012-08-20 | 2020-06-17 | LG Innotek Co., Ltd. | Light emitting diode |
KR101886156B1 (ko) * | 2012-08-21 | 2018-09-11 | 엘지이노텍 주식회사 | 발광소자 |
DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
JP2015173177A (ja) * | 2014-03-11 | 2015-10-01 | 株式会社東芝 | 半導体発光素子 |
KR102212666B1 (ko) | 2014-06-27 | 2021-02-05 | 엘지이노텍 주식회사 | 발광소자 |
TWI781193B (zh) * | 2017-08-24 | 2022-10-21 | 日商索尼股份有限公司 | 發光模組、光源單元、光造形裝置 |
US11749790B2 (en) * | 2017-12-20 | 2023-09-05 | Lumileds Llc | Segmented LED with embedded transistors |
DE202019000909U1 (de) | 2019-02-23 | 2019-04-05 | Makram Abdalla | Messgeräteeinheit mit einer Skala und einem Zeiger mit Grenzmomentkupplung |
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- 2012-03-08 JP JP2012051937A patent/JP5960452B2/ja active Active
- 2012-03-12 EP EP12159105.1A patent/EP2565921B1/en active Active
- 2012-03-19 CN CN201210075741.7A patent/CN102969426B/zh active Active
Patent Citations (2)
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JP2010153814A (ja) * | 2008-12-24 | 2010-07-08 | Seoul Opto Devices Co Ltd | 複数の発光セルを有する発光素子及びその製造方法 |
WO2010146783A1 (ja) * | 2009-06-15 | 2010-12-23 | パナソニック株式会社 | 半導体発光装置、発光モジュール、および照明装置 |
Cited By (2)
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KR20160102752A (ko) * | 2015-02-23 | 2016-08-31 | 엘지이노텍 주식회사 | 발광소자 및 라이팅 유닛 |
KR102237152B1 (ko) | 2015-02-23 | 2021-04-07 | 엘지이노텍 주식회사 | 발광소자 및 라이팅 유닛 |
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Publication number | Publication date |
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CN102969426A (zh) | 2013-03-13 |
CN102969426B (zh) | 2017-03-01 |
KR20130025232A (ko) | 2013-03-11 |
KR101830719B1 (ko) | 2018-02-21 |
US8884506B2 (en) | 2014-11-11 |
EP2565921B1 (en) | 2018-08-15 |
EP2565921A1 (en) | 2013-03-06 |
JP5960452B2 (ja) | 2016-08-02 |
US20120182738A1 (en) | 2012-07-19 |
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