KR101830719B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR101830719B1
KR101830719B1 KR1020110088636A KR20110088636A KR101830719B1 KR 101830719 B1 KR101830719 B1 KR 101830719B1 KR 1020110088636 A KR1020110088636 A KR 1020110088636A KR 20110088636 A KR20110088636 A KR 20110088636A KR 101830719 B1 KR101830719 B1 KR 101830719B1
Authority
KR
South Korea
Prior art keywords
light emitting
layer
conductive layers
emitting regions
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110088636A
Other languages
English (en)
Korean (ko)
Other versions
KR20130025232A (ko
Inventor
정환희
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110088636A priority Critical patent/KR101830719B1/ko
Priority to US13/402,619 priority patent/US8884506B2/en
Priority to JP2012051937A priority patent/JP5960452B2/ja
Priority to EP12159105.1A priority patent/EP2565921B1/en
Priority to CN201210075741.7A priority patent/CN102969426B/zh
Publication of KR20130025232A publication Critical patent/KR20130025232A/ko
Application granted granted Critical
Publication of KR101830719B1 publication Critical patent/KR101830719B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020110088636A 2011-09-01 2011-09-01 발광 소자 Expired - Fee Related KR101830719B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020110088636A KR101830719B1 (ko) 2011-09-01 2011-09-01 발광 소자
US13/402,619 US8884506B2 (en) 2011-09-01 2012-02-22 Light emitting device capable of preventing breakage during high drive voltage and light emitting device package including the same
JP2012051937A JP5960452B2 (ja) 2011-09-01 2012-03-08 発光素子
EP12159105.1A EP2565921B1 (en) 2011-09-01 2012-03-12 Light emitting device
CN201210075741.7A CN102969426B (zh) 2011-09-01 2012-03-19 发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110088636A KR101830719B1 (ko) 2011-09-01 2011-09-01 발광 소자

Publications (2)

Publication Number Publication Date
KR20130025232A KR20130025232A (ko) 2013-03-11
KR101830719B1 true KR101830719B1 (ko) 2018-02-21

Family

ID=45841327

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110088636A Expired - Fee Related KR101830719B1 (ko) 2011-09-01 2011-09-01 발광 소자

Country Status (5)

Country Link
US (1) US8884506B2 (enExample)
EP (1) EP2565921B1 (enExample)
JP (1) JP5960452B2 (enExample)
KR (1) KR101830719B1 (enExample)
CN (1) CN102969426B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2701212B1 (en) * 2012-08-20 2020-06-17 LG Innotek Co., Ltd. Light emitting diode
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2015173177A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光素子
KR102212666B1 (ko) * 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
KR102237152B1 (ko) * 2015-02-23 2021-04-07 엘지이노텍 주식회사 발광소자 및 라이팅 유닛
TWI781193B (zh) * 2017-08-24 2022-10-21 日商索尼股份有限公司 發光模組、光源單元、光造形裝置
US11749790B2 (en) * 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
DE202019000909U1 (de) 2019-02-23 2019-04-05 Makram Abdalla Messgeräteeinheit mit einer Skala und einem Zeiger mit Grenzmomentkupplung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112005002889B4 (de) * 2004-12-14 2015-07-23 Seoul Viosys Co., Ltd. Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen und Baugruppen-Montage desselben
JP5059739B2 (ja) * 2005-03-11 2012-10-31 ソウル セミコンダクター カンパニー リミテッド 直列接続された発光セルのアレイを有する発光ダイオードパッケージ
KR100599012B1 (ko) 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101571577B1 (ko) * 2008-02-29 2015-11-24 오스람 옵토 세미컨덕터스 게엠베하 모놀리식 광전자 반도체 본체 및 그 제조 방법
TW200947652A (en) 2008-05-12 2009-11-16 Harvatek Corp Semiconductor chip package structure for achieving positive face electrical connection without using substrates and a wire-bonding process
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP5304662B2 (ja) * 2009-02-18 2013-10-02 日立電線株式会社 発光素子
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
EP2445018B1 (en) * 2009-06-15 2016-05-11 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light-emitting device, light-emitting module, and illumination device
JP2011035017A (ja) * 2009-07-30 2011-02-17 Hitachi Cable Ltd 発光素子
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
EP2565921B1 (en) 2018-08-15
KR20130025232A (ko) 2013-03-11
JP2013055318A (ja) 2013-03-21
US20120182738A1 (en) 2012-07-19
US8884506B2 (en) 2014-11-11
CN102969426B (zh) 2017-03-01
EP2565921A1 (en) 2013-03-06
JP5960452B2 (ja) 2016-08-02
CN102969426A (zh) 2013-03-13

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