JP5959529B2 - ウェーハ又はダイの処理方法 - Google Patents
ウェーハ又はダイの処理方法 Download PDFInfo
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- JP5959529B2 JP5959529B2 JP2013541337A JP2013541337A JP5959529B2 JP 5959529 B2 JP5959529 B2 JP 5959529B2 JP 2013541337 A JP2013541337 A JP 2013541337A JP 2013541337 A JP2013541337 A JP 2013541337A JP 5959529 B2 JP5959529 B2 JP 5959529B2
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- 238000003672 processing method Methods 0.000 title description 2
- 239000007788 liquid Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 36
- 238000011282 treatment Methods 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 50
- 238000007789 sealing Methods 0.000 description 17
- 239000012459 cleaning agent Substances 0.000 description 8
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003502 gasoline Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
a)ウェーハ又はダイを用意するステップと、
b)ウェーハ又はダイを支持体上に配置するステップと、
c)処理されるべき表面を包囲する境界部を形成する材料を用意するステップと、
d)、処理されるべき表面周りに窪みが形成され、液体が窪みから逃げ出ることができないようにするよう包囲境界部のための材料を被着させるステップと、
e)窪みに処理液を充填するステップとを有することを特徴とする方法によって達成される。
クリーニングに要する時間をこのようにして短縮することができる。
3 クリーニング剤を収容した窪み
5 リング
7 リングを固定する機械的手段(及び必要ならばフレーム)
9 フレーム
11 フィルム
13 真空の印加箇所
15 多孔質支持面
17 クリーニングを目的としたウェーハ(シンニングされている)
19 密封リップ
20 Oリング(ループの状態にぐるりと延びている)
21 支持された表面
23 真空用の凹部
25 フレーム用の凹部
27 吸引による抽出通路
Claims (7)
- ウェーハ又はダイの表面を処理する方法であって、
a)ウェーハ又はダイを用意するステップと、
b)前記ウェーハ又はダイを支持体上に配置するステップと、
c)処理されるべき前記表面を包囲する境界部を形成する材料を用意するステップと、
d)前記処理されるべき表面周りに窪みが形成され、液体が前記窪みから逃げ出ることができないようにするよう前記包囲境界部のための前記材料を被着させるステップであって、前記包囲境界部のための前記材料は、前記境界部の頂縁からクリーニングしようとする前記表面まで下方に傾斜したベベルが存在するよう被着されるステップと、
e)前記窪みに処理液を充填するステップと、
f)前記処理液を遠心力により除去するステップであって、前記包囲境界部を含む窪み全体が回転させられるステップと、
を有する、方法。 - 前記包囲境界部のための前記材料は、リングを形成する、請求項1記載の方法。
- 前記処理液の処理効果は、前記処理液の振動及び/又は加熱によって向上する、請求項1又は2に記載の方法。
- 前記処理は、クリーニングを含む、請求項1〜3のいずれか一項に記載の方法。
- 前記クリーニング効果は、ステップe)後に前記処理液中に浸かる超音波エミッタによって支援される、請求項3又は4記載の方法。
- 前記窪みは、前記窪みのフロア全体が前記ウェーハ又は前記ダイによって完全に形成されるよう設計されている、請求項1〜5のいずれか一項に記載の方法。
- 請求項1〜6のいずれか一項に記載の方法を実施するよう設計された装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010062166A DE102010062166A1 (de) | 2010-11-30 | 2010-11-30 | Verfahren zum Behandeln von Wafern und Mikroplättchen |
DE102010062166.8 | 2010-11-30 | ||
PCT/EP2011/071434 WO2012072706A1 (de) | 2010-11-30 | 2011-11-30 | Verfahren zum behandeln von wafern und mikroplättchen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014501043A JP2014501043A (ja) | 2014-01-16 |
JP5959529B2 true JP5959529B2 (ja) | 2016-08-02 |
Family
ID=45047843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013541337A Active JP5959529B2 (ja) | 2010-11-30 | 2011-11-30 | ウェーハ又はダイの処理方法 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2647043B1 (ja) |
JP (1) | JP5959529B2 (ja) |
KR (1) | KR101801337B1 (ja) |
CN (1) | CN103238211B (ja) |
DE (1) | DE102010062166A1 (ja) |
PT (1) | PT2647043T (ja) |
WO (1) | WO2012072706A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6093638B2 (ja) * | 2013-04-26 | 2017-03-08 | 株式会社ディスコ | 洗浄装置 |
CN105219963B (zh) * | 2014-06-10 | 2017-06-30 | 沈阳芯源微电子设备有限公司 | 一种废液废固分离回收系统 |
JP6573531B2 (ja) * | 2015-11-02 | 2019-09-11 | 東京エレクトロン株式会社 | 洗浄装置、剥離システム、洗浄方法、剥離方法、プログラム、および情報記憶媒体 |
JP6611565B2 (ja) * | 2015-11-02 | 2019-11-27 | 東京エレクトロン株式会社 | 洗浄装置、剥離システム、洗浄方法、剥離方法、プログラム、および情報記憶媒体 |
CN108857862B (zh) * | 2018-06-12 | 2020-05-12 | 山东科芯电子有限公司 | 一种半导体硅晶圆研磨处理系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4086870A (en) * | 1977-06-30 | 1978-05-02 | International Business Machines Corporation | Novel resist spinning head |
JPS63152123A (ja) * | 1986-12-17 | 1988-06-24 | Tokyo Electron Ltd | 浸漬式の液処理装置 |
JP2724870B2 (ja) * | 1988-04-08 | 1998-03-09 | 東京エレクトロン株式会社 | 処理装置 |
JP2719618B2 (ja) * | 1989-03-25 | 1998-02-25 | 東京エレクトロン株式会社 | 基板の洗浄装置 |
JP2833519B2 (ja) * | 1994-09-27 | 1998-12-09 | 日本電気株式会社 | 絶縁膜上の半導体膜の薄膜化方法および薄膜化装置 |
JPH10172938A (ja) * | 1996-12-06 | 1998-06-26 | Sony Corp | ウェーハスクラブ処理装置 |
JP3910830B2 (ja) * | 2001-11-14 | 2007-04-25 | 信越半導体株式会社 | シリコンウェーハの酸化膜の除去方法及びその装置 |
JP4621038B2 (ja) * | 2005-02-18 | 2011-01-26 | Okiセミコンダクタ株式会社 | 半導体ウエハの洗浄方法及び半導体ウエハの洗浄装置 |
JP2008021929A (ja) * | 2006-07-14 | 2008-01-31 | Tokyo Ohka Kogyo Co Ltd | サポートプレート、搬送装置、剥離装置及び剥離方法 |
JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
US20090173358A1 (en) * | 2008-01-09 | 2009-07-09 | Micron Technology, Inc. | Megasonic cleaning with controlled boundary layer thickness and associated systems and methods |
JP5300464B2 (ja) * | 2008-12-26 | 2013-09-25 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
-
2010
- 2010-11-30 DE DE102010062166A patent/DE102010062166A1/de active Pending
-
2011
- 2011-11-30 WO PCT/EP2011/071434 patent/WO2012072706A1/de active Application Filing
- 2011-11-30 KR KR1020137016060A patent/KR101801337B1/ko active IP Right Grant
- 2011-11-30 EP EP11788538.4A patent/EP2647043B1/de active Active
- 2011-11-30 PT PT117885384T patent/PT2647043T/pt unknown
- 2011-11-30 CN CN201180057666.5A patent/CN103238211B/zh active Active
- 2011-11-30 JP JP2013541337A patent/JP5959529B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2647043B1 (de) | 2021-04-14 |
DE102010062166A1 (de) | 2012-05-31 |
CN103238211B (zh) | 2016-01-20 |
EP2647043A1 (de) | 2013-10-09 |
PT2647043T (pt) | 2021-05-12 |
KR20130132867A (ko) | 2013-12-05 |
KR101801337B1 (ko) | 2017-11-24 |
JP2014501043A (ja) | 2014-01-16 |
CN103238211A (zh) | 2013-08-07 |
WO2012072706A1 (de) | 2012-06-07 |
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