JP5950507B2 - 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法 - Google Patents

半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法 Download PDF

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JP5950507B2
JP5950507B2 JP2011103007A JP2011103007A JP5950507B2 JP 5950507 B2 JP5950507 B2 JP 5950507B2 JP 2011103007 A JP2011103007 A JP 2011103007A JP 2011103007 A JP2011103007 A JP 2011103007A JP 5950507 B2 JP5950507 B2 JP 5950507B2
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impurity region
ion implantation
conductivity type
semiconductor device
silicon
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JP2011103007A
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Japanese (ja)
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JP2012234988A5 (https=
JP2012234988A (ja
Inventor
康博 川端
康博 川端
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Canon Inc
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Canon Inc
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Priority to JP2011103007A priority Critical patent/JP5950507B2/ja
Priority to US13/455,981 priority patent/US8679884B2/en
Publication of JP2012234988A publication Critical patent/JP2012234988A/ja
Publication of JP2012234988A5 publication Critical patent/JP2012234988A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2011103007A 2011-05-02 2011-05-02 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法 Expired - Fee Related JP5950507B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011103007A JP5950507B2 (ja) 2011-05-02 2011-05-02 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法
US13/455,981 US8679884B2 (en) 2011-05-02 2012-04-25 Methods for manufacturing semiconductor apparatus and CMOS image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011103007A JP5950507B2 (ja) 2011-05-02 2011-05-02 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法

Publications (3)

Publication Number Publication Date
JP2012234988A JP2012234988A (ja) 2012-11-29
JP2012234988A5 JP2012234988A5 (https=) 2014-06-19
JP5950507B2 true JP5950507B2 (ja) 2016-07-13

Family

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JP2011103007A Expired - Fee Related JP5950507B2 (ja) 2011-05-02 2011-05-02 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法

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US (1) US8679884B2 (https=)
JP (1) JP5950507B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6445799B2 (ja) * 2014-07-08 2018-12-26 キヤノン株式会社 光電変換装置
JP2016115815A (ja) * 2014-12-15 2016-06-23 キヤノン株式会社 撮像装置および撮像システム
JP6650668B2 (ja) * 2014-12-16 2020-02-19 キヤノン株式会社 固体撮像装置
JP6842240B2 (ja) * 2016-03-07 2021-03-17 株式会社リコー 画素ユニット、及び撮像素子
JP6897740B2 (ja) * 2016-03-07 2021-07-07 株式会社リコー 画素ユニット、及び撮像素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2775765B2 (ja) * 1988-09-02 1998-07-16 ソニー株式会社 半導体装置の製造法
JPH04196341A (ja) * 1990-11-28 1992-07-16 Hitachi Ltd 半導体装置の製造方法
JPH05218409A (ja) 1992-02-05 1993-08-27 Fujitsu Ltd 半導体装置の製造方法
JPH05283404A (ja) 1992-03-31 1993-10-29 Oki Electric Ind Co Ltd 半導体装置の素子分離領域製造方法
US5344787A (en) * 1993-09-24 1994-09-06 Vlsi Technology, Inc. Latid implants for increasing the effective width of transistor elements in a semiconductor device
JP3047822B2 (ja) * 1996-08-29 2000-06-05 日本電気株式会社 半導体装置の製造方法
JP3455655B2 (ja) 1997-03-03 2003-10-14 株式会社東芝 固体撮像装置および固体撮像装置応用システム
JPH113937A (ja) 1997-06-11 1999-01-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH118387A (ja) 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP2001237310A (ja) * 2000-02-23 2001-08-31 Seiko Epson Corp 半導体装置の製造方法
JP3544175B2 (ja) 2000-11-28 2004-07-21 キヤノン株式会社 半導体装置を用いた固体撮像装置及びカメラ
JP2002222854A (ja) * 2001-01-25 2002-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4054557B2 (ja) * 2001-10-10 2008-02-27 沖電気工業株式会社 半導体素子の製造方法
US6649461B1 (en) * 2002-04-25 2003-11-18 Chartered Semiconductor Manufacturing Ltd. Method of angle implant to improve transistor reverse narrow width effect
KR20040008912A (ko) 2002-07-19 2004-01-31 주식회사 하이닉스반도체 이미지센서의 하이브리드 소자분리 방법
JP2006024876A (ja) 2004-06-07 2006-01-26 Sun Tec Kk 波長走査型ファイバレーザ光源

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US20120282729A1 (en) 2012-11-08
JP2012234988A (ja) 2012-11-29
US8679884B2 (en) 2014-03-25

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