JP5940022B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5940022B2
JP5940022B2 JP2013124352A JP2013124352A JP5940022B2 JP 5940022 B2 JP5940022 B2 JP 5940022B2 JP 2013124352 A JP2013124352 A JP 2013124352A JP 2013124352 A JP2013124352 A JP 2013124352A JP 5940022 B2 JP5940022 B2 JP 5940022B2
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Japan
Prior art keywords
developer
film
semiconductor substrate
semiconductor device
manufacturing
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JP2013124352A
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English (en)
Japanese (ja)
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JP2015002184A (ja
JP2015002184A5 (enExample
Inventor
淳 綾
淳 綾
鹿間　省三
省三 鹿間
秀昭 結城
秀昭 結城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013124352A priority Critical patent/JP5940022B2/ja
Priority to US14/242,057 priority patent/US9188872B2/en
Priority to KR1020140066775A priority patent/KR20140145550A/ko
Priority to DE102014210882.9A priority patent/DE102014210882B4/de
Priority to CN201410264507.8A priority patent/CN104238280B/zh
Publication of JP2015002184A publication Critical patent/JP2015002184A/ja
Publication of JP2015002184A5 publication Critical patent/JP2015002184A5/ja
Priority to KR1020150188082A priority patent/KR20160007460A/ko
Application granted granted Critical
Publication of JP5940022B2 publication Critical patent/JP5940022B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP2013124352A 2013-06-13 2013-06-13 半導体装置の製造方法 Active JP5940022B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法
US14/242,057 US9188872B2 (en) 2013-06-13 2014-04-01 Method for manufacturing semiconductor device
KR1020140066775A KR20140145550A (ko) 2013-06-13 2014-06-02 반도체장치의 제조방법
DE102014210882.9A DE102014210882B4 (de) 2013-06-13 2014-06-06 Verfahren zur Herstellung einer Halbleitervorrichtung
CN201410264507.8A CN104238280B (zh) 2013-06-13 2014-06-13 半导体装置的制造方法
KR1020150188082A KR20160007460A (ko) 2013-06-13 2015-12-29 반도체장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015002184A JP2015002184A (ja) 2015-01-05
JP2015002184A5 JP2015002184A5 (enExample) 2015-07-09
JP5940022B2 true JP5940022B2 (ja) 2016-06-29

Family

ID=52009962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013124352A Active JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US9188872B2 (enExample)
JP (1) JP5940022B2 (enExample)
KR (2) KR20140145550A (enExample)
CN (1) CN104238280B (enExample)
DE (1) DE102014210882B4 (enExample)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929838A (enExample) * 1972-07-15 1974-03-16
JP2652481B2 (ja) * 1991-10-25 1997-09-10 大日本スクリーン製造株式会社 基板の現像処理方法
JPH06349725A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 現像装置
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10232498A (ja) * 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JPH11329960A (ja) * 1998-02-23 1999-11-30 Toshiba Corp 基板処理方法及び基板処理装置
JP3492546B2 (ja) * 1999-05-06 2004-02-03 東京エレクトロン株式会社 液処理装置及びその方法
US6159662A (en) * 1999-05-17 2000-12-12 Taiwan Semiconductor Manufacturing Company Photoresist development method with reduced cycle time and improved performance
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
US6706321B2 (en) 2000-06-13 2004-03-16 Tokyo Electron Limited Developing treatment method and developing treatment unit
JP3704059B2 (ja) * 2000-06-13 2005-10-05 東京エレクトロン株式会社 現像処理方法及び現像処理装置
JP3708433B2 (ja) * 2000-12-18 2005-10-19 シャープ株式会社 半導体装置の製造方法
US6811955B2 (en) * 2002-09-04 2004-11-02 Taiwan Semiconductor Manufacturing Co., Ltd Method for photoresist development with improved CD
JP2007305864A (ja) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 現像方法及びそれを用いた半導体装置の製造方法
JP2009004597A (ja) 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置
JP5836021B2 (ja) 2011-09-02 2015-12-24 昭和電工株式会社 厚膜レジストの現像方法、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
US9188872B2 (en) 2015-11-17
KR20160007460A (ko) 2016-01-20
DE102014210882B4 (de) 2019-11-14
JP2015002184A (ja) 2015-01-05
KR20140145550A (ko) 2014-12-23
CN104238280B (zh) 2017-11-28
DE102014210882A1 (de) 2014-12-18
CN104238280A (zh) 2014-12-24
US20140370445A1 (en) 2014-12-18

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