DE102014210882B4 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
DE102014210882B4
DE102014210882B4 DE102014210882.9A DE102014210882A DE102014210882B4 DE 102014210882 B4 DE102014210882 B4 DE 102014210882B4 DE 102014210882 A DE102014210882 A DE 102014210882A DE 102014210882 B4 DE102014210882 B4 DE 102014210882B4
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DE
Germany
Prior art keywords
developing solution
film
semiconductor device
film thickness
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102014210882.9A
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German (de)
English (en)
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DE102014210882A1 (de
Inventor
Sunao Aya
Shozo Shikama
Hideaki YUKI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102014210882A1 publication Critical patent/DE102014210882A1/de
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
DE102014210882.9A 2013-06-13 2014-06-06 Verfahren zur Herstellung einer Halbleitervorrichtung Active DE102014210882B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法
JP2013-124352 2013-06-13

Publications (2)

Publication Number Publication Date
DE102014210882A1 DE102014210882A1 (de) 2014-12-18
DE102014210882B4 true DE102014210882B4 (de) 2019-11-14

Family

ID=52009962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014210882.9A Active DE102014210882B4 (de) 2013-06-13 2014-06-06 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US9188872B2 (enExample)
JP (1) JP5940022B2 (enExample)
KR (2) KR20140145550A (enExample)
CN (1) CN104238280B (enExample)
DE (1) DE102014210882B4 (enExample)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JP2002184679A (ja) * 2000-12-18 2002-06-28 Sharp Corp 半導体装置の製造方法
US20040043329A1 (en) * 2002-09-04 2004-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for photoresist development with improved CD
JP2009004597A (ja) * 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929838A (enExample) * 1972-07-15 1974-03-16
JP2652481B2 (ja) * 1991-10-25 1997-09-10 大日本スクリーン製造株式会社 基板の現像処理方法
JPH06349725A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 現像装置
JPH10232498A (ja) * 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JPH11329960A (ja) * 1998-02-23 1999-11-30 Toshiba Corp 基板処理方法及び基板処理装置
JP3492546B2 (ja) * 1999-05-06 2004-02-03 東京エレクトロン株式会社 液処理装置及びその方法
US6159662A (en) * 1999-05-17 2000-12-12 Taiwan Semiconductor Manufacturing Company Photoresist development method with reduced cycle time and improved performance
JP3704059B2 (ja) * 2000-06-13 2005-10-05 東京エレクトロン株式会社 現像処理方法及び現像処理装置
US6706321B2 (en) * 2000-06-13 2004-03-16 Tokyo Electron Limited Developing treatment method and developing treatment unit
JP2007305864A (ja) 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 現像方法及びそれを用いた半導体装置の製造方法
JP5836021B2 (ja) 2011-09-02 2015-12-24 昭和電工株式会社 厚膜レジストの現像方法、及び半導体デバイスの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
JP2002184679A (ja) * 2000-12-18 2002-06-28 Sharp Corp 半導体装置の製造方法
US20040043329A1 (en) * 2002-09-04 2004-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for photoresist development with improved CD
JP2009004597A (ja) * 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置

Also Published As

Publication number Publication date
CN104238280A (zh) 2014-12-24
US20140370445A1 (en) 2014-12-18
KR20140145550A (ko) 2014-12-23
KR20160007460A (ko) 2016-01-20
CN104238280B (zh) 2017-11-28
DE102014210882A1 (de) 2014-12-18
JP2015002184A (ja) 2015-01-05
US9188872B2 (en) 2015-11-17
JP5940022B2 (ja) 2016-06-29

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