JP2015002184A5 - - Google Patents

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Publication number
JP2015002184A5
JP2015002184A5 JP2013124352A JP2013124352A JP2015002184A5 JP 2015002184 A5 JP2015002184 A5 JP 2015002184A5 JP 2013124352 A JP2013124352 A JP 2013124352A JP 2013124352 A JP2013124352 A JP 2013124352A JP 2015002184 A5 JP2015002184 A5 JP 2015002184A5
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JP
Japan
Prior art keywords
developer
film thickness
film
dropping
manufacturing
Prior art date
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Application number
JP2013124352A
Other languages
English (en)
Japanese (ja)
Other versions
JP5940022B2 (ja
JP2015002184A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2013124352A external-priority patent/JP5940022B2/ja
Priority to JP2013124352A priority Critical patent/JP5940022B2/ja
Priority to US14/242,057 priority patent/US9188872B2/en
Priority to KR1020140066775A priority patent/KR20140145550A/ko
Priority to DE102014210882.9A priority patent/DE102014210882B4/de
Priority to CN201410264507.8A priority patent/CN104238280B/zh
Publication of JP2015002184A publication Critical patent/JP2015002184A/ja
Publication of JP2015002184A5 publication Critical patent/JP2015002184A5/ja
Priority to KR1020150188082A priority patent/KR20160007460A/ko
Publication of JP5940022B2 publication Critical patent/JP5940022B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013124352A 2013-06-13 2013-06-13 半導体装置の製造方法 Active JP5940022B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法
US14/242,057 US9188872B2 (en) 2013-06-13 2014-04-01 Method for manufacturing semiconductor device
KR1020140066775A KR20140145550A (ko) 2013-06-13 2014-06-02 반도체장치의 제조방법
DE102014210882.9A DE102014210882B4 (de) 2013-06-13 2014-06-06 Verfahren zur Herstellung einer Halbleitervorrichtung
CN201410264507.8A CN104238280B (zh) 2013-06-13 2014-06-13 半导体装置的制造方法
KR1020150188082A KR20160007460A (ko) 2013-06-13 2015-12-29 반도체장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015002184A JP2015002184A (ja) 2015-01-05
JP2015002184A5 true JP2015002184A5 (enExample) 2015-07-09
JP5940022B2 JP5940022B2 (ja) 2016-06-29

Family

ID=52009962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013124352A Active JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US9188872B2 (enExample)
JP (1) JP5940022B2 (enExample)
KR (2) KR20140145550A (enExample)
CN (1) CN104238280B (enExample)
DE (1) DE102014210882B4 (enExample)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929838A (enExample) * 1972-07-15 1974-03-16
JP2652481B2 (ja) * 1991-10-25 1997-09-10 大日本スクリーン製造株式会社 基板の現像処理方法
JPH06349725A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 現像装置
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10232498A (ja) * 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JPH11329960A (ja) * 1998-02-23 1999-11-30 Toshiba Corp 基板処理方法及び基板処理装置
JP3492546B2 (ja) * 1999-05-06 2004-02-03 東京エレクトロン株式会社 液処理装置及びその方法
US6159662A (en) * 1999-05-17 2000-12-12 Taiwan Semiconductor Manufacturing Company Photoresist development method with reduced cycle time and improved performance
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
US6706321B2 (en) 2000-06-13 2004-03-16 Tokyo Electron Limited Developing treatment method and developing treatment unit
JP3704059B2 (ja) * 2000-06-13 2005-10-05 東京エレクトロン株式会社 現像処理方法及び現像処理装置
JP3708433B2 (ja) * 2000-12-18 2005-10-19 シャープ株式会社 半導体装置の製造方法
US6811955B2 (en) * 2002-09-04 2004-11-02 Taiwan Semiconductor Manufacturing Co., Ltd Method for photoresist development with improved CD
JP2007305864A (ja) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 現像方法及びそれを用いた半導体装置の製造方法
JP2009004597A (ja) 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置
JP5836021B2 (ja) 2011-09-02 2015-12-24 昭和電工株式会社 厚膜レジストの現像方法、及び半導体デバイスの製造方法

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