JP5933222B2 - 温度制御方法、制御装置及びプラズマ処理装置 - Google Patents

温度制御方法、制御装置及びプラズマ処理装置 Download PDF

Info

Publication number
JP5933222B2
JP5933222B2 JP2011244539A JP2011244539A JP5933222B2 JP 5933222 B2 JP5933222 B2 JP 5933222B2 JP 2011244539 A JP2011244539 A JP 2011244539A JP 2011244539 A JP2011244539 A JP 2011244539A JP 5933222 B2 JP5933222 B2 JP 5933222B2
Authority
JP
Japan
Prior art keywords
temperature
temperature control
plasma
set temperature
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011244539A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013102041A (ja
JP2013102041A5 (enExample
Inventor
達也 三浦
達也 三浦
亘 小澤
亘 小澤
公博 深澤
公博 深澤
和典 風間
和典 風間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2011244539A priority Critical patent/JP5933222B2/ja
Priority to KR1020147012222A priority patent/KR102015679B1/ko
Priority to US14/354,649 priority patent/US10254774B2/en
Priority to PCT/JP2012/078077 priority patent/WO2013069510A1/ja
Priority to TW101140597A priority patent/TWI557797B/zh
Publication of JP2013102041A publication Critical patent/JP2013102041A/ja
Publication of JP2013102041A5 publication Critical patent/JP2013102041A5/ja
Application granted granted Critical
Publication of JP5933222B2 publication Critical patent/JP5933222B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G05D23/1904—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value variable in time
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2011244539A 2011-11-08 2011-11-08 温度制御方法、制御装置及びプラズマ処理装置 Active JP5933222B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011244539A JP5933222B2 (ja) 2011-11-08 2011-11-08 温度制御方法、制御装置及びプラズマ処理装置
KR1020147012222A KR102015679B1 (ko) 2011-11-08 2012-10-30 온도 제어 방법, 제어 장치 및 플라즈마 처리 장치
US14/354,649 US10254774B2 (en) 2011-11-08 2012-10-30 Temperature control method, control apparatus, and plasma processing apparatus
PCT/JP2012/078077 WO2013069510A1 (ja) 2011-11-08 2012-10-30 温度制御方法、制御装置及びプラズマ処理装置
TW101140597A TWI557797B (zh) 2011-11-08 2012-11-01 溫度控制方法、控制裝置及電漿處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011244539A JP5933222B2 (ja) 2011-11-08 2011-11-08 温度制御方法、制御装置及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2013102041A JP2013102041A (ja) 2013-05-23
JP2013102041A5 JP2013102041A5 (enExample) 2014-12-25
JP5933222B2 true JP5933222B2 (ja) 2016-06-08

Family

ID=48289888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011244539A Active JP5933222B2 (ja) 2011-11-08 2011-11-08 温度制御方法、制御装置及びプラズマ処理装置

Country Status (5)

Country Link
US (1) US10254774B2 (enExample)
JP (1) JP5933222B2 (enExample)
KR (1) KR102015679B1 (enExample)
TW (1) TWI557797B (enExample)
WO (1) WO2013069510A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6159172B2 (ja) * 2013-06-26 2017-07-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6287018B2 (ja) * 2013-10-04 2018-03-07 富士通株式会社 可視化方法、表示方法、情報処理装置、可視化プログラム及び表示プログラム
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
JP2021042409A (ja) * 2019-09-09 2021-03-18 東京エレクトロン株式会社 プラズマ処理装置及び温度制御方法
JP7394668B2 (ja) * 2020-03-13 2023-12-08 東京エレクトロン株式会社 温度制御方法およびプラズマ処理装置
US11875978B2 (en) 2020-06-16 2024-01-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
JP7561575B2 (ja) * 2020-11-02 2024-10-04 東京エレクトロン株式会社 レシピ更新方法
US20250027202A1 (en) * 2023-07-21 2025-01-23 Applied Materials, Inc. Methods of adjusting uniformity, and related apparatus and systems, for semiconductor manufacturing

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
JPH08158071A (ja) 1994-12-05 1996-06-18 Sumitomo Metal Ind Ltd プラズマプロセス装置
JPH08288230A (ja) * 1995-04-18 1996-11-01 Kokusai Electric Co Ltd 電気炉の加熱制御装置
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
JPH09260474A (ja) * 1996-03-22 1997-10-03 Sony Corp 静電チャックおよびウエハステージ
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
JP3577951B2 (ja) * 1998-05-29 2004-10-20 株式会社日立製作所 枚葉式真空処理方法及び装置
JP2000021964A (ja) * 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
US6917419B2 (en) * 2000-09-20 2005-07-12 Kla-Tencor Technologies Corp. Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
KR100770128B1 (ko) * 2005-07-26 2007-10-24 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7960297B1 (en) 2006-12-07 2011-06-14 Novellus Systems, Inc. Load lock design for rapid wafer heating
US20080237184A1 (en) * 2007-03-30 2008-10-02 Mamoru Yakushiji Method and apparatus for plasma processing
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
JP4611409B2 (ja) * 2008-09-03 2011-01-12 晃俊 沖野 プラズマ温度制御装置
JP6219251B2 (ja) * 2014-09-17 2017-10-25 東芝メモリ株式会社 半導体製造装置

Also Published As

Publication number Publication date
US10254774B2 (en) 2019-04-09
KR102015679B1 (ko) 2019-08-28
WO2013069510A1 (ja) 2013-05-16
KR20140090180A (ko) 2014-07-16
JP2013102041A (ja) 2013-05-23
TW201334061A (zh) 2013-08-16
US20140288726A1 (en) 2014-09-25
TWI557797B (zh) 2016-11-11

Similar Documents

Publication Publication Date Title
JP5933222B2 (ja) 温度制御方法、制御装置及びプラズマ処理装置
JP6100672B2 (ja) 温度制御機構、温度制御方法及び基板処理装置
KR102143272B1 (ko) 기판 처리 장치, 기판 적재 기구, 및 기판 처리 방법
JP2019192734A (ja) プラズマエッチング方法及びプラズマ処理装置
KR102390726B1 (ko) 유기막을 에칭하는 방법
TW201543571A (zh) 蝕刻方法
TWI619164B (zh) 用於電漿蝕刻操作的基材支撐件
JP7321026B2 (ja) エッジリング、載置台、基板処理装置及び基板処理方法
JP2014011382A (ja) プラズマ処理装置、及び温度制御方法
JP6159172B2 (ja) 温度制御方法及びプラズマ処理装置
US10546723B2 (en) Plasma processing method
CN111105973B (zh) 清洗方法及等离子体处理装置
JP2021039924A (ja) プラズマ処理装置、処理方法、上部電極構造
JP2019216150A (ja) クリーニング方法
US20240290625A1 (en) Plasma processing apparatus
JP2017010993A (ja) プラズマ処理方法
JP2019201086A (ja) 処理装置、部材及び温度制御方法
CN110021524B (zh) 蚀刻方法
KR102751423B1 (ko) 클리닝 처리 방법 및 플라즈마 처리 장치
TWI719958B (zh) 電漿蝕刻方法
US11282701B2 (en) Plasma processing method and plasma processing apparatus
KR20210032904A (ko) 실리콘 산화막을 에칭하는 방법 및 플라즈마 처리 장치
JP2020167279A (ja) プラズマ処理装置
JP2006351814A (ja) クリーニング方法、コンピュータプログラム及び成膜装置
JP7160291B2 (ja) エッチング方法、及びエッチング装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160325

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160412

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160502

R150 Certificate of patent or registration of utility model

Ref document number: 5933222

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250