KR102015679B1 - 온도 제어 방법, 제어 장치 및 플라즈마 처리 장치 - Google Patents

온도 제어 방법, 제어 장치 및 플라즈마 처리 장치 Download PDF

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KR102015679B1
KR102015679B1 KR1020147012222A KR20147012222A KR102015679B1 KR 102015679 B1 KR102015679 B1 KR 102015679B1 KR 1020147012222 A KR1020147012222 A KR 1020147012222A KR 20147012222 A KR20147012222 A KR 20147012222A KR 102015679 B1 KR102015679 B1 KR 102015679B1
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temperature
temperature control
plasma
carrying
set temperature
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KR20140090180A (ko
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다츠야 미우라
와타루 오자와
기미히로 후카사와
가즈노리 가자마
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G05D23/1904—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value variable in time
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020147012222A 2011-11-08 2012-10-30 온도 제어 방법, 제어 장치 및 플라즈마 처리 장치 Active KR102015679B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011244539A JP5933222B2 (ja) 2011-11-08 2011-11-08 温度制御方法、制御装置及びプラズマ処理装置
JPJP-P-2011-244539 2011-11-08
US201161560952P 2011-11-17 2011-11-17
US61/560,952 2011-11-17
PCT/JP2012/078077 WO2013069510A1 (ja) 2011-11-08 2012-10-30 温度制御方法、制御装置及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20140090180A KR20140090180A (ko) 2014-07-16
KR102015679B1 true KR102015679B1 (ko) 2019-08-28

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KR1020147012222A Active KR102015679B1 (ko) 2011-11-08 2012-10-30 온도 제어 방법, 제어 장치 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US10254774B2 (enExample)
JP (1) JP5933222B2 (enExample)
KR (1) KR102015679B1 (enExample)
TW (1) TWI557797B (enExample)
WO (1) WO2013069510A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210030203A (ko) * 2019-09-09 2021-03-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 온도 제어 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6159172B2 (ja) * 2013-06-26 2017-07-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6287018B2 (ja) * 2013-10-04 2018-03-07 富士通株式会社 可視化方法、表示方法、情報処理装置、可視化プログラム及び表示プログラム
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
JP7394668B2 (ja) * 2020-03-13 2023-12-08 東京エレクトロン株式会社 温度制御方法およびプラズマ処理装置
CN114080662B (zh) 2020-06-16 2025-11-14 株式会社日立高新技术 等离子处理装置以及等离子处理方法
JP7561575B2 (ja) * 2020-11-02 2024-10-04 東京エレクトロン株式会社 レシピ更新方法
US20250027202A1 (en) * 2023-07-21 2025-01-23 Applied Materials, Inc. Methods of adjusting uniformity, and related apparatus and systems, for semiconductor manufacturing

Citations (1)

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Publication number Priority date Publication date Assignee Title
US7960297B1 (en) 2006-12-07 2011-06-14 Novellus Systems, Inc. Load lock design for rapid wafer heating

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JPH08158071A (ja) 1994-12-05 1996-06-18 Sumitomo Metal Ind Ltd プラズマプロセス装置
JPH08288230A (ja) * 1995-04-18 1996-11-01 Kokusai Electric Co Ltd 電気炉の加熱制御装置
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
JPH09260474A (ja) * 1996-03-22 1997-10-03 Sony Corp 静電チャックおよびウエハステージ
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
JP3577951B2 (ja) * 1998-05-29 2004-10-20 株式会社日立製作所 枚葉式真空処理方法及び装置
JP2000021964A (ja) * 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
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US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
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US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
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JP4611409B2 (ja) * 2008-09-03 2011-01-12 晃俊 沖野 プラズマ温度制御装置
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Publication number Priority date Publication date Assignee Title
US7960297B1 (en) 2006-12-07 2011-06-14 Novellus Systems, Inc. Load lock design for rapid wafer heating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210030203A (ko) * 2019-09-09 2021-03-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 온도 제어 방법
KR102459570B1 (ko) * 2019-09-09 2022-10-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 온도 제어 방법

Also Published As

Publication number Publication date
KR20140090180A (ko) 2014-07-16
TWI557797B (zh) 2016-11-11
US10254774B2 (en) 2019-04-09
WO2013069510A1 (ja) 2013-05-16
TW201334061A (zh) 2013-08-16
US20140288726A1 (en) 2014-09-25
JP2013102041A (ja) 2013-05-23
JP5933222B2 (ja) 2016-06-08

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