JP5929331B2 - 記録装置 - Google Patents

記録装置 Download PDF

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Publication number
JP5929331B2
JP5929331B2 JP2012049130A JP2012049130A JP5929331B2 JP 5929331 B2 JP5929331 B2 JP 5929331B2 JP 2012049130 A JP2012049130 A JP 2012049130A JP 2012049130 A JP2012049130 A JP 2012049130A JP 5929331 B2 JP5929331 B2 JP 5929331B2
Authority
JP
Japan
Prior art keywords
laser
recording
unit
mode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012049130A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013187234A5 (enExample
JP2013187234A (ja
Inventor
務 丸山
務 丸山
藤田　五郎
五郎 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012049130A priority Critical patent/JP5929331B2/ja
Priority to US13/774,657 priority patent/US8934324B2/en
Priority to CN201310062508XA priority patent/CN103310811A/zh
Publication of JP2013187234A publication Critical patent/JP2013187234A/ja
Publication of JP2013187234A5 publication Critical patent/JP2013187234A5/ja
Application granted granted Critical
Publication of JP5929331B2 publication Critical patent/JP5929331B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0028—Laser diodes used as detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
JP2012049130A 2012-03-06 2012-03-06 記録装置 Expired - Fee Related JP5929331B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012049130A JP5929331B2 (ja) 2012-03-06 2012-03-06 記録装置
US13/774,657 US8934324B2 (en) 2012-03-06 2013-02-22 Light source and recording apparatus
CN201310062508XA CN103310811A (zh) 2012-03-06 2013-02-27 光源和记录装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012049130A JP5929331B2 (ja) 2012-03-06 2012-03-06 記録装置

Publications (3)

Publication Number Publication Date
JP2013187234A JP2013187234A (ja) 2013-09-19
JP2013187234A5 JP2013187234A5 (enExample) 2015-02-26
JP5929331B2 true JP5929331B2 (ja) 2016-06-01

Family

ID=49114041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012049130A Expired - Fee Related JP5929331B2 (ja) 2012-03-06 2012-03-06 記録装置

Country Status (3)

Country Link
US (1) US8934324B2 (enExample)
JP (1) JP5929331B2 (enExample)
CN (1) CN103310811A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5589671B2 (ja) * 2010-08-20 2014-09-17 ソニー株式会社 レーザ装置、レーザ増幅変調方法。
WO2015097972A1 (en) * 2013-12-26 2015-07-02 Sony Corporation Control device, control method, and program
KR101915750B1 (ko) * 2016-12-28 2018-11-06 주식회사 라이콤 저반복 광펄스 레이저 및 그 구동방법
KR20180076522A (ko) * 2016-12-28 2018-07-06 주식회사 라이콤 저반복 광펄스 레이저 및 그 구동방법
KR101915757B1 (ko) * 2016-12-28 2018-11-06 주식회사 라이콤 저반복 광펄스 레이저 및 그 구동방법
WO2019087524A1 (ja) * 2017-11-02 2019-05-09 ソニー株式会社 半導体レーザ駆動回路、半導体レーザ駆動回路の駆動方法、距離測定装置及び電子機器
US12431687B2 (en) * 2021-09-22 2025-09-30 Raytheon Company Multi-octave spanning millimeter wave source with phase memory

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183235A (ja) * 1986-02-07 1987-08-11 Matsushita Electric Ind Co Ltd 回線終端装置
JP2735039B2 (ja) * 1995-06-09 1998-04-02 日本電気株式会社 光パルス発生方法および装置
JP2976287B2 (ja) * 1997-12-08 1999-11-10 日本電気株式会社 データ伝送装置およびデータ伝送方法
JPH11340954A (ja) * 1998-05-28 1999-12-10 Nec Corp 光クロック抽出回路
US6252892B1 (en) * 1998-09-08 2001-06-26 Imra America, Inc. Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters
JP2000111852A (ja) * 1998-10-05 2000-04-21 Nec Corp 光分波回路
JP3772650B2 (ja) * 2000-07-13 2006-05-10 日本電気株式会社 モード同期半導体レーザの駆動方法及び装置
JP4239440B2 (ja) * 2001-07-12 2009-03-18 日本電気株式会社 光クロックパルス列発生装置
JP2007525012A (ja) * 2003-06-27 2007-08-30 アプライド　マテリアルズ　インコーポレイテッド 低ジッタのパルス型量子ドットレーザシステム
US20060222024A1 (en) * 2005-03-15 2006-10-05 Gray Allen L Mode-locked semiconductor lasers with quantum-confined active region
JP5233090B2 (ja) * 2006-07-28 2013-07-10 沖電気工業株式会社 キャリア抑圧光パルス列発生方法及びこの方法を実現するモード同期半導体レーザ
JPWO2009054526A1 (ja) * 2007-10-25 2011-03-10 日本電気株式会社 モード同期レーザ
JP4605236B2 (ja) * 2008-03-26 2011-01-05 ソニー株式会社 光記録再生装置および光記録再生方法
JP2009238280A (ja) * 2008-03-26 2009-10-15 Sony Corp 光記録装置、光記録方法およびクロック生成装置
JP2009277270A (ja) * 2008-05-13 2009-11-26 Fujifilm Corp 光記録媒体の記録装置
JP2011204914A (ja) * 2010-03-25 2011-10-13 Sony Corp 光発振装置及び記録装置
JP5589671B2 (ja) * 2010-08-20 2014-09-17 ソニー株式会社 レーザ装置、レーザ増幅変調方法。
JP2012059343A (ja) * 2010-09-13 2012-03-22 Sony Corp 記録装置

Also Published As

Publication number Publication date
US8934324B2 (en) 2015-01-13
JP2013187234A (ja) 2013-09-19
CN103310811A (zh) 2013-09-18
US20130235710A1 (en) 2013-09-12

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