JP5929132B2 - 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 - Google Patents

金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 Download PDF

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JP5929132B2
JP5929132B2 JP2011261991A JP2011261991A JP5929132B2 JP 5929132 B2 JP5929132 B2 JP 5929132B2 JP 2011261991 A JP2011261991 A JP 2011261991A JP 2011261991 A JP2011261991 A JP 2011261991A JP 5929132 B2 JP5929132 B2 JP 5929132B2
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thin film
forming
metal oxide
oxide thin
coating liquid
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Japanese (ja)
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JP2013115328A (ja
Inventor
中村　有希
有希 中村
植田　尚之
尚之 植田
由希子 安部
由希子 安部
雄司 曽根
雄司 曽根
真二 松本
真二 松本
美樹子 ▲高▼田
美樹子 ▲高▼田
遼一 早乙女
遼一 早乙女
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP2011261991A priority Critical patent/JP5929132B2/ja
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to CN201280068540.2A priority patent/CN104081510A/zh
Priority to IN4267CHN2014 priority patent/IN2014CN04267A/en
Priority to KR1020147017669A priority patent/KR101697412B1/ko
Priority to EP12852690.2A priority patent/EP2786405B1/en
Priority to PCT/JP2012/081426 priority patent/WO2013081167A1/en
Priority to US14/361,150 priority patent/US9418842B2/en
Priority to CN201710363619.2A priority patent/CN107403716A/zh
Priority to TW101144794A priority patent/TWI559540B/zh
Publication of JP2013115328A publication Critical patent/JP2013115328A/ja
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Publication of JP5929132B2 publication Critical patent/JP5929132B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2011261991A 2011-11-30 2011-11-30 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 Active JP5929132B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2011261991A JP5929132B2 (ja) 2011-11-30 2011-11-30 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法
IN4267CHN2014 IN2014CN04267A (enExample) 2011-11-30 2012-11-28
KR1020147017669A KR101697412B1 (ko) 2011-11-30 2012-11-28 금속 산화물 박막 형성용 도포액, 금속 산화물 박막, 전계 효과형 트랜지스터, 및 전계 효과형 트랜지스터의 제조 방법
EP12852690.2A EP2786405B1 (en) 2011-11-30 2012-11-28 Coating liquid for forming metal oxide thin film and method for manufacturing field-effect transistor
CN201280068540.2A CN104081510A (zh) 2011-11-30 2012-11-28 形成金属氧化物薄膜的涂布液、金属氧化物薄膜、场效应晶体管和制造场效应晶体管的方法
PCT/JP2012/081426 WO2013081167A1 (en) 2011-11-30 2012-11-28 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor
US14/361,150 US9418842B2 (en) 2011-11-30 2012-11-28 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor
CN201710363619.2A CN107403716A (zh) 2011-11-30 2012-11-28 形成金属氧化物薄膜的涂布液、金属氧化物薄膜、场效应晶体管和制造场效应晶体管的方法
TW101144794A TWI559540B (zh) 2011-11-30 2012-11-29 形成金屬氧化物薄膜用塗佈液、金屬氧化物薄膜、場效電晶體、以及製造場效電晶體的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011261991A JP5929132B2 (ja) 2011-11-30 2011-11-30 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法

Publications (2)

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JP2013115328A JP2013115328A (ja) 2013-06-10
JP5929132B2 true JP5929132B2 (ja) 2016-06-01

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US (1) US9418842B2 (enExample)
EP (1) EP2786405B1 (enExample)
JP (1) JP5929132B2 (enExample)
KR (1) KR101697412B1 (enExample)
CN (2) CN107403716A (enExample)
IN (1) IN2014CN04267A (enExample)
TW (1) TWI559540B (enExample)
WO (1) WO2013081167A1 (enExample)

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CN105408244B (zh) * 2013-08-07 2019-04-12 株式会社尼康 金属氧化物膜的制造方法和晶体管的制造方法
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JP6828293B2 (ja) 2015-09-15 2021-02-10 株式会社リコー ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法
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JP6907512B2 (ja) * 2015-12-15 2021-07-21 株式会社リコー 電界効果型トランジスタの製造方法
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JP6848405B2 (ja) * 2016-12-07 2021-03-24 株式会社リコー 電界効果型トランジスタの製造方法
CN107546262A (zh) * 2017-07-17 2018-01-05 华南理工大学 一种基于锶铟氧化物的薄膜晶体管及其制备方法
TWI702186B (zh) 2018-03-19 2020-08-21 日商理光股份有限公司 形成氧化物用的塗佈液、製造氧化物薄膜的方法及製造場效電晶體的方法
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Also Published As

Publication number Publication date
EP2786405A1 (en) 2014-10-08
KR20140097475A (ko) 2014-08-06
US9418842B2 (en) 2016-08-16
CN104081510A (zh) 2014-10-01
TWI559540B (zh) 2016-11-21
US20140299877A1 (en) 2014-10-09
EP2786405A4 (en) 2015-04-08
EP2786405B1 (en) 2017-03-29
KR101697412B1 (ko) 2017-01-17
IN2014CN04267A (enExample) 2015-07-31
JP2013115328A (ja) 2013-06-10
CN107403716A (zh) 2017-11-28
TW201327831A (zh) 2013-07-01
WO2013081167A1 (en) 2013-06-06

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