IN2014CN04267A - - Google Patents

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Publication number
IN2014CN04267A
IN2014CN04267A IN4267CHN2014A IN2014CN04267A IN 2014CN04267 A IN2014CN04267 A IN 2014CN04267A IN 4267CHN2014 A IN4267CHN2014 A IN 4267CHN2014A IN 2014CN04267 A IN2014CN04267 A IN 2014CN04267A
Authority
IN
India
Prior art keywords
inorganic
compound
coating liquid
coating
thin film
Prior art date
Application number
Inventor
Yuki Nakamura
Naoyuki Ueda
Yukiko Abe
Yuji Sone
Shinji Matsumoto
Mikiko Takada
Ryoichi Saotome
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of IN2014CN04267A publication Critical patent/IN2014CN04267A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound or both thereof; and an organic solvent. An oxide semiconductor formed by coating the coating liquid is used for an active layer of a field effect transistor.
IN4267CHN2014 2011-11-30 2012-11-28 IN2014CN04267A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011261991A JP5929132B2 (en) 2011-11-30 2011-11-30 Metal oxide thin film forming coating liquid, metal oxide thin film manufacturing method, and field effect transistor manufacturing method
PCT/JP2012/081426 WO2013081167A1 (en) 2011-11-30 2012-11-28 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor

Publications (1)

Publication Number Publication Date
IN2014CN04267A true IN2014CN04267A (en) 2015-07-31

Family

ID=48535613

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4267CHN2014 IN2014CN04267A (en) 2011-11-30 2012-11-28

Country Status (8)

Country Link
US (1) US9418842B2 (en)
EP (1) EP2786405B1 (en)
JP (1) JP5929132B2 (en)
KR (1) KR101697412B1 (en)
CN (2) CN104081510A (en)
IN (1) IN2014CN04267A (en)
TW (1) TWI559540B (en)
WO (1) WO2013081167A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6454974B2 (en) 2013-03-29 2019-01-23 株式会社リコー Metal oxide film forming coating solution, metal oxide film manufacturing method, and field effect transistor manufacturing method
CN105408244B (en) * 2013-08-07 2019-04-12 株式会社尼康 The manufacturing method of metal oxide film and the manufacturing method of transistor
JP6180908B2 (en) * 2013-12-06 2017-08-16 富士フイルム株式会社 Metal oxide semiconductor film, thin film transistor, display device, image sensor and X-ray sensor
JP6672611B2 (en) 2014-07-03 2020-03-25 株式会社リコー Electrochromic compound, electrochromic composition, display device and light control device
TWI560781B (en) * 2014-09-10 2016-12-01 Au Optronics Corp Method for fabricating thin film transistor and apparatus thereof
GB201418610D0 (en) * 2014-10-20 2014-12-03 Cambridge Entpr Ltd Transistor devices
CN104934444B (en) * 2015-05-11 2018-01-02 深圳市华星光电技术有限公司 Coplanar type oxide semiconductor TFT substrate structure and preparation method thereof
EP3125296B1 (en) 2015-07-30 2020-06-10 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP6828293B2 (en) 2015-09-15 2021-02-10 株式会社リコー A coating liquid for forming an n-type oxide semiconductor film, a method for producing an n-type oxide semiconductor film, and a method for producing a field-effect transistor.
US10269293B2 (en) 2015-10-23 2019-04-23 Ricoh Company, Ltd. Field-effect transistor (FET) having gate oxide insulating layer including SI and alkaline earth elements, and display element, image display and system including FET
US10600916B2 (en) 2015-12-08 2020-03-24 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP6607013B2 (en) 2015-12-08 2019-11-20 株式会社リコー Field effect transistor, display element, image display device, and system
US10170635B2 (en) 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
JP6907512B2 (en) * 2015-12-15 2021-07-21 株式会社リコー Manufacturing method of field effect transistor
JP6701835B2 (en) 2016-03-11 2020-05-27 株式会社リコー Field effect transistor, display element, image display device, and system
JP6848405B2 (en) * 2016-12-07 2021-03-24 株式会社リコー Manufacturing method of field effect transistor
CN107546262A (en) * 2017-07-17 2018-01-05 华南理工大学 A kind of thin film transistor (TFT) based on strontium indium oxide and preparation method thereof
TWI702186B (en) 2018-03-19 2020-08-21 日商理光股份有限公司 Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor
CN111370495B (en) * 2018-12-26 2022-05-03 Tcl科技集团股份有限公司 Thin film transistor active layer ink and preparation method of thin film transistor
JP7326795B2 (en) 2019-03-20 2023-08-16 株式会社リコー FIELD EFFECT TRANSISTOR, DISPLAY DEVICE, IMAGE DISPLAY DEVICE, AND SYSTEM
CN113314614A (en) * 2021-05-28 2021-08-27 电子科技大学 Oxide thin film transistor device based on nano-imprinting method and preparation method thereof

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JPH0696619A (en) 1992-09-14 1994-04-08 Matsushita Electric Ind Co Ltd Composition for forming transparent conductive film and method therefor
JPH07320541A (en) 1994-05-19 1995-12-08 Matsushita Electric Ind Co Ltd Transparent conductive film forming composition and manufacture of transparent conductive film
JP2001234343A (en) 2000-02-17 2001-08-31 Asahi Denka Kogyo Kk Metallic compound solution and method for producing thin film using the same
US7442408B2 (en) * 2002-03-26 2008-10-28 Hewlett-Packard Development Company, L.P. Methods for ink-jet printing circuitry
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Also Published As

Publication number Publication date
CN104081510A (en) 2014-10-01
US9418842B2 (en) 2016-08-16
WO2013081167A1 (en) 2013-06-06
TW201327831A (en) 2013-07-01
TWI559540B (en) 2016-11-21
EP2786405A4 (en) 2015-04-08
KR20140097475A (en) 2014-08-06
KR101697412B1 (en) 2017-01-17
CN107403716A (en) 2017-11-28
EP2786405B1 (en) 2017-03-29
JP5929132B2 (en) 2016-06-01
JP2013115328A (en) 2013-06-10
US20140299877A1 (en) 2014-10-09
EP2786405A1 (en) 2014-10-08

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