JP5916384B2 - ウェハ処理堆積物遮蔽構成材 - Google Patents

ウェハ処理堆積物遮蔽構成材 Download PDF

Info

Publication number
JP5916384B2
JP5916384B2 JP2011505129A JP2011505129A JP5916384B2 JP 5916384 B2 JP5916384 B2 JP 5916384B2 JP 2011505129 A JP2011505129 A JP 2011505129A JP 2011505129 A JP2011505129 A JP 2011505129A JP 5916384 B2 JP5916384 B2 JP 5916384B2
Authority
JP
Japan
Prior art keywords
band
substrate support
inches
annular
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011505129A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011518255A5 (enExample
JP2011518255A (ja
Inventor
マーチン リー リケル
マーチン リー リケル
キース エー ミラー
キース エー ミラー
アナンサ ケー サブラマニ
アナンサ ケー サブラマニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011518255A publication Critical patent/JP2011518255A/ja
Publication of JP2011518255A5 publication Critical patent/JP2011518255A5/ja
Application granted granted Critical
Publication of JP5916384B2 publication Critical patent/JP5916384B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2011505129A 2008-04-16 2009-04-14 ウェハ処理堆積物遮蔽構成材 Active JP5916384B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4555608P 2008-04-16 2008-04-16
US61/045,556 2008-04-16
US4933408P 2008-04-30 2008-04-30
US61/049,334 2008-04-30
PCT/US2009/040487 WO2009154853A2 (en) 2008-04-16 2009-04-14 Wafer processing deposition shielding components

Publications (3)

Publication Number Publication Date
JP2011518255A JP2011518255A (ja) 2011-06-23
JP2011518255A5 JP2011518255A5 (enExample) 2012-06-07
JP5916384B2 true JP5916384B2 (ja) 2016-05-11

Family

ID=41200217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011505129A Active JP5916384B2 (ja) 2008-04-16 2009-04-14 ウェハ処理堆積物遮蔽構成材

Country Status (6)

Country Link
US (3) US20090260982A1 (enExample)
JP (1) JP5916384B2 (enExample)
KR (6) KR101571558B1 (enExample)
CN (1) CN102007572B (enExample)
TW (1) TWI502670B (enExample)
WO (1) WO2009154853A2 (enExample)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9062379B2 (en) * 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
WO2009135050A2 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Process kit for rf physical vapor deposition
US8900471B2 (en) * 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
KR20120089647A (ko) * 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 물리적 기상 증착을 위한 프로세스 키트
US8580092B2 (en) 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
US9834840B2 (en) * 2010-05-14 2017-12-05 Applied Materials, Inc. Process kit shield for improved particle reduction
KR20130095276A (ko) * 2010-08-20 2013-08-27 어플라이드 머티어리얼스, 인코포레이티드 수명이 연장된 증착 링
CN108359957A (zh) 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
GB201102447D0 (en) * 2011-02-11 2011-03-30 Spp Process Technology Systems Uk Ltd Composite shielding
EP2487275B1 (en) * 2011-02-11 2016-06-15 SPTS Technologies Limited Composite shielding
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
WO2013026493A1 (en) * 2011-08-25 2013-02-28 Applied Materials, Inc. Corner cut mask
WO2013094200A1 (ja) * 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置
TWM431893U (en) * 2012-02-10 2012-06-21 Well Thin Technology Ltd Deposition ring
US9376752B2 (en) * 2012-04-06 2016-06-28 Applied Materials, Inc. Edge ring for a deposition chamber
US20130277203A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Process kit shield and physical vapor deposition chamber having same
WO2014035957A1 (en) * 2012-08-30 2014-03-06 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
CN103911585A (zh) * 2013-01-08 2014-07-09 旭晖应用材料股份有限公司 遮罩
KR102072044B1 (ko) * 2013-09-26 2020-01-31 주성엔지니어링(주) 기판 처리 장치
KR102449103B1 (ko) * 2014-03-12 2022-09-28 어플라이드 머티어리얼스, 인코포레이티드 반도체 챔버에서의 웨이퍼 회전
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US20150354054A1 (en) * 2014-06-06 2015-12-10 Applied Materials, Inc. Cooled process tool adapter for use in substrate processing chambers
US10283334B2 (en) * 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
CN105624634B (zh) * 2014-11-04 2018-05-08 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN107406974B (zh) * 2015-01-19 2021-02-12 欧瑞康表面解决方案股份公司普费菲孔 用于执行真空辅助的涂层方法的涂层腔，隔热板以及涂层方法
US10903055B2 (en) 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
JP7008509B2 (ja) * 2015-05-27 2022-02-10 アプライド マテリアルズ インコーポレイテッド 高成長率のｅｐｉチャンバのための遮熱リング
US10755902B2 (en) * 2015-05-27 2020-08-25 Tokyo Electron Limited Plasma processing apparatus and focus ring
KR102709082B1 (ko) 2015-07-03 2024-09-23 어플라이드 머티어리얼스, 인코포레이티드 높은 증착 링 및 증착 링 클램프를 갖는 프로세스 키트
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
KR20240127488A (ko) 2015-10-27 2024-08-22 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR102689380B1 (ko) 2016-01-26 2024-07-26 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 에지 링 리프팅 솔루션
CN116110846A (zh) 2016-01-26 2023-05-12 应用材料公司 晶片边缘环升降解决方案
KR102161986B1 (ko) * 2016-07-06 2020-10-06 가부시키가이샤 아루박 성막 장치, 플래턴 링
US10446420B2 (en) 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN109804455B (zh) * 2016-10-14 2022-03-15 瑞士艾发科技 溅射源
US10923385B2 (en) * 2016-11-03 2021-02-16 Lam Research Corporation Carrier plate for use in plasma processing systems
US10697057B2 (en) * 2016-11-18 2020-06-30 Applied Materials, Inc. Collimator for use in a physical vapor deposition chamber
JP7117300B2 (ja) * 2016-11-19 2022-08-12 アプライド マテリアルズ インコーポレイテッド 浮遊シャドウリングを有するプロセスキット
US10886113B2 (en) * 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
CN108456860B (zh) * 2017-02-22 2020-12-08 北京北方华创微电子装备有限公司 一种沉积腔室和膜层沉积装置
US11043364B2 (en) * 2017-06-05 2021-06-22 Applied Materials, Inc. Process kit for multi-cathode processing chamber
CN107227448B (zh) * 2017-06-30 2023-10-13 北京北方华创微电子装备有限公司 基座以及物理气相沉积装置
EP3852137A1 (en) 2017-07-24 2021-07-21 LAM Research Corporation Moveable edge ring design
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
TWI722257B (zh) * 2017-11-21 2021-03-21 美商蘭姆研究公司 底部和中間邊緣環
TWI760111B (zh) * 2017-11-21 2022-04-01 美商蘭姆研究公司 底部和中間邊緣環
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102699890B1 (ko) * 2018-04-18 2024-08-29 어플라이드 머티어리얼스, 인코포레이티드 자기-중심조정 피쳐를 갖는 2-피스 셔터 디스크 조립체
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
KR102067820B1 (ko) * 2018-07-24 2020-01-17 (주)선익시스템 가변형 아크억제수단이 마련된 증착장비
CN110838429B (zh) * 2018-08-15 2022-07-22 北京北方华创微电子装备有限公司 腔体内衬、等离子体反应腔室和等离子体设备
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US11551965B2 (en) 2018-12-07 2023-01-10 Applied Materials, Inc. Apparatus to reduce polymers deposition
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
US12209302B2 (en) * 2018-12-19 2025-01-28 Evatec Ag Vacuum system and method to deposit a compound layer
US11486038B2 (en) 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
JP7329940B2 (ja) * 2019-03-22 2023-08-21 株式会社アルバック 成膜装置及びその製造方法。
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
CN110066981B (zh) * 2019-06-17 2023-11-28 浙江晶驰光电科技有限公司 正装基片定位装置及基片装载方法
CN110273134B (zh) * 2019-07-25 2024-06-21 深圳清华大学研究院 全口径薄膜沉积夹具
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
JP7376693B2 (ja) 2019-09-09 2023-11-08 アプライド マテリアルズ インコーポレイテッド 処理システムおよび反応体ガスを供給する方法
KR102776948B1 (ko) * 2019-11-20 2025-03-05 캐논 톡키 가부시키가이샤 성막 장치, 이를 사용한 성막 방법 및 전자 디바이스 제조 방법
CN111235535B (zh) * 2020-01-22 2021-11-16 北京北方华创微电子装备有限公司 一种溅射反应腔室的工艺组件及其溅射反应腔室
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
CN115553070A (zh) * 2020-05-06 2022-12-30 Asml荷兰有限公司 机械绝缘设备的污染屏蔽件
US11581166B2 (en) 2020-07-31 2023-02-14 Applied Materials, Inc. Low profile deposition ring for enhanced life
USD1038049S1 (en) 2020-11-18 2024-08-06 Applied Materials, Inc. Cover ring for use in semiconductor processing chamber
US12100579B2 (en) * 2020-11-18 2024-09-24 Applied Materials, Inc. Deposition ring for thin substrate handling via edge clamping
US11996315B2 (en) 2020-11-18 2024-05-28 Applied Materials, Inc. Thin substrate handling via edge clamping
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN114763602B (zh) * 2021-01-13 2023-09-29 台湾积体电路制造股份有限公司 晶圆处理设备与制造半导体装置的方法
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN115110042B (zh) * 2021-03-22 2024-03-01 台湾积体电路制造股份有限公司 物理气相沉积反应室及其使用方法
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11581167B2 (en) * 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
CN114672780B (zh) * 2022-03-22 2023-09-19 颀中科技（苏州）有限公司 晶圆托盘及晶圆片溅渡设备
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
CN120380193A (zh) 2022-07-08 2025-07-25 东曹Smd有限公司 用于物理气相沉积溅射应用的动态真空密封系统
US20240021417A1 (en) * 2022-07-15 2024-01-18 Samsung Electronics Co., Ltd. Focus ring, substrate processing apparatus including the same, and semiconductor fabrication method using the same
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same
KR102847491B1 (ko) * 2023-02-06 2025-08-20 주식회사 트리버스시스템 전자 소멸 방지 쉴드를 구비한 반도체 프로세스 챔버
KR102649810B1 (ko) * 2023-08-30 2024-03-21 주식회사 코미코 증착 공정용 챔버의 코팅방법

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784162B2 (ja) 1988-07-25 1995-09-13 東海興業株式会社 ウェザーストリップ、及びその成形方法
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
US5632873A (en) * 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
JP3545123B2 (ja) * 1996-01-26 2004-07-21 アプライド マテリアルズ インコーポレイテッド ウエハ加熱器用成膜防護具
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6034863A (en) * 1997-11-12 2000-03-07 Applied Materials, Inc. Apparatus for retaining a workpiece in a process chamber within a semiconductor wafer processing system
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
JP2001140054A (ja) 1999-11-15 2001-05-22 Nec Kagoshima Ltd 真空成膜装置のクリーニング方法及び真空成膜装置
KR100342395B1 (ko) * 2000-06-28 2002-07-02 황인길 반도체 소자 제조 장치
US6699375B1 (en) * 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US20020090464A1 (en) * 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
US6899798B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Reusable ceramic-comprising component which includes a scrificial surface layer
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6730174B2 (en) * 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US6797131B2 (en) * 2002-11-12 2004-09-28 Applied Materials, Inc. Design of hardware features to facilitate arc-spray coating applications and functions
KR20050069452A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 스퍼터링 장치의 실드구조
US20060054090A1 (en) 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
KR20070045060A (ko) * 2005-10-26 2007-05-02 삼성전자주식회사 증착 링 및 이를 세정하는 방법
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
JP4954542B2 (ja) * 2005-12-09 2012-06-20 三菱マテリアル株式会社 掘削ロッド、掘削ビット及び掘削工具
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber

Also Published As

Publication number Publication date
WO2009154853A3 (en) 2010-02-25
KR101939640B1 (ko) 2019-01-17
KR102025330B1 (ko) 2019-09-25
KR101571558B1 (ko) 2015-11-24
US8696878B2 (en) 2014-04-15
KR102134276B1 (ko) 2020-07-15
KR20160030343A (ko) 2016-03-16
JP2011518255A (ja) 2011-06-23
US20140190822A1 (en) 2014-07-10
WO2009154853A2 (en) 2009-12-23
KR20150136142A (ko) 2015-12-04
TWI502670B (zh) 2015-10-01
US9476122B2 (en) 2016-10-25
CN102007572A (zh) 2011-04-06
US20120211359A1 (en) 2012-08-23
KR20160105989A (ko) 2016-09-08
KR20110007195A (ko) 2011-01-21
KR20190092628A (ko) 2019-08-07
TW201003819A (en) 2010-01-16
CN102007572B (zh) 2013-01-16
KR20200067957A (ko) 2020-06-12
US20090260982A1 (en) 2009-10-22

Similar Documents

Publication Publication Date Title
JP5916384B2 (ja) ウェハ処理堆積物遮蔽構成材
JP5762281B2 (ja) Ｒｆ物理気相蒸着用処理キット
JP5611350B2 (ja) Ｒｆ物理気相堆積用のプロセスキット
KR200482327Y1 (ko) 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트
US9062379B2 (en) Wafer processing deposition shielding components
JP2018519426A (ja) 背高の堆積リングと堆積リングクランプとを有するプロセスキット

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120413

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130729

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130806

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131105

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131112

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131206

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131213

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140104

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140206

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140808

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140815

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20140905

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150827

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150930

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151030

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160405

R150 Certificate of patent or registration of utility model

Ref document number: 5916384

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250